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IRF830AL MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF830AL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 74 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO262

IRF830AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF830AL PDF doc:

3.1. irf830as.pdf Size:155K _international_rectifier

IRF830AL
IRF830AL

PD- 92006A SMPS MOSFET IRF830AS/L HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40? 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current D2

3.2. irf830as-lpbf.pdf Size:676K _international_rectifier

IRF830AL
IRF830AL

PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40? 5.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage a

3.3. irf830a.pdf Size:108K _international_rectifier

IRF830AL
IRF830AL

PD- 91878C SMPS MOSFET IRF830A HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40? 5.0A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

3.4. irf830apbf.pdf Size:168K _international_rectifier

IRF830AL
IRF830AL

PD- 94820 SMPS MOSFET IRF830APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40? 5.0A High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage an

3.5. irf830a.pdf Size:911K _samsung

IRF830AL
IRF830AL

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology ? RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

3.6. irf830a_sihf830a.pdf Size:1091K _vishay

IRF830AL
IRF830AL

IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 1.4 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.3 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configuration Single

Datasheet: IRF820FI , IRF820S , IRF821 , IRF822 , IRF822FI , IRF823 , IRF830 , IRF830A , IRF5210 , IRF830AS , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 , IRF833 , IRF840 .

 


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