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IRF831FI MOSFET (IC) Datasheet. Cross Reference Search. IRF831FI Equivalent

Type Designator: IRF831FI

Type of IRF831FI transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 450

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 3

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF831FI transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 800

Maximum drain-source on-state resistance (Rds), Ohm: 1.5

Package: ISOWATT220

IRF831FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF831FI PDF doc:

5.1. irf830_1.pdf Size:58K _philips

IRF831FI
IRF831FI

Philips Semiconductors Product specification PowerMOS transistor IRF830 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 5.9 A g RDS(ON) ? 1.5 ? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTION tab field-

5.2. irf830.pdf Size:92K _st

IRF831FI
IRF831FI

IRF830 ? N - CHANNEL 500V - 1.35? - 4.5A - TO-220 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF830 500 V < 1.5 ? 4.5 A TYPICAL R = 1.35 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 DESCRIPTION 2 This power MOSFET is designed using the 1 companys consolidated strip layout-based MESH OVERLAY? process. This

5.3. irf830-1-2-3-fi.pdf Size:481K _st2

IRF831FI
IRF831FI

5.4. irf830b.pdf Size:888K _fairchild_semi

IRF831FI
IRF831FI

November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC) planar, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored to Fast switchin

5.5. irf830b_irfs830b.pdf Size:888K _fairchild_semi

IRF831FI
IRF831FI

November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tailored to

5.6. irf830as.pdf Size:155K _international_rectifier

IRF831FI
IRF831FI

PD- 92006A SMPS MOSFET IRF830AS/L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40? 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current D2

5.7. irf830as-lpbf.pdf Size:676K _international_rectifier

IRF831FI
IRF831FI

PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40? 5.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage a

5.8. irf830a.pdf Size:108K _international_rectifier

IRF831FI
IRF831FI

PD- 91878C SMPS MOSFET IRF830A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40? 5.0A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

5.9. irf830apbf.pdf Size:168K _international_rectifier

IRF831FI
IRF831FI

PD- 94820 SMPS MOSFET IRF830APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40? 5.0A High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage an

5.10. irf830.pdf Size:875K _international_rectifier

IRF831FI
IRF831FI

PD - 94881 IRF830PbF Lead-Free 12/10/03 Document Number: 91063 www.vishay.com 1 IRF830PbF Document Number: 91063 www.vishay.com 2 IRF830PbF Document Number: 91063 www.vishay.com 3 IRF830PbF Document Number: 91063 www.vishay.com 4 IRF830PbF Document Number: 91063 www.vishay.com 5 IRF830PbF Document Number: 91063 www.vishay.com 6 IRF830PbF TO-220AB Package Outline Dime

5.11. irf830s.pdf Size:326K _international_rectifier

IRF831FI
IRF831FI

PD - 95542 IRF830SPbF Lead-Free SMD-220 7/21/04 Document Number: 91064 www.vishay.com 1 IRF830SPbF Document Number: 91064 www.vishay.com 2 IRF830SPbF Document Number: 91064 www.vishay.com 3 IRF830SPbF Document Number: 91064 www.vishay.com 4 IRF830SPbF Document Number: 91064 www.vishay.com 5 IRF830SPbF Document Number: 91064 www.vishay.com 6 IRF830SPbF Peak Diode Reco

5.12. irfp430-433_irf830-833.pdf Size:345K _samsung

IRF831FI
IRF831FI



5.13. irf830a.pdf Size:911K _samsung

IRF831FI
IRF831FI

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology ? RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

5.14. irf830a_sihf830a.pdf Size:1091K _vishay

IRF831FI
IRF831FI

IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 1.4 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.3 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configuration Single

5.15. irf830_sihf830.pdf Size:201K _vishay

IRF831FI
IRF831FI

IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.0 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220

5.16. irf830.rev0.pdf Size:62K _onsemi

IRF831FI
IRF831FI

IRF830 Power Field Effect Transistor NChannel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. http://onsemi.com Silicon Gate for Fast Switching Speeds TMOS POWER FET Low RDS(on) to Minimize OnLosses, Specified at Elevated Temperature 4.

5.17. irf830.pdf Size:114K _inchange_semiconductor

IRF831FI
IRF831FI

MOSFET INCHANGE IRF830 N-channel mosfet transistor Features With TO-220 package Ў¤ Simple drive requirements Ў¤ Fast switching Ў¤ VDSS=500V; RDS(ON)ЎЬ 1.5¦ё ;ID=4.5A Ў¤ 1.gate 2.drain 3.source Ў¤ 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissipation@TC=2

5.18. hirf830.pdf Size:46K _hsmc

IRF831FI
IRF831FI

Spec. No. : MOS200407 HI-SINCERITY Issued Date : 2004.10.01 Revised Date : 2005.04.22 MICROELECTRONICS CORP. Page No. : 1/4 HIRF830 Series Pin Assignment HIRF830 / HIRF830F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This N - Channel MOSFETs provide the designer with the best combination of fast switch

5.19. irf830i-hf.pdf Size:95K _a-power

IRF831FI
IRF831FI

IRF830I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 1.5? Ў Simple Drive Requirement ID 4.5A G Ў RoHS Compliant & Halogen-Free S Description G APEC MOSFET provide the power designer with the best combination of D TO-220CFM(I) S fast switching , lower on

5.20. irf830.pdf Size:95K _a-power

IRF831FI
IRF831FI

IRF830 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 1.5? Ў Simple Drive Requirement ID 4.5A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost. The T

5.21. irf830s.pdf Size:1986K _kexin

IRF831FI
IRF831FI

SMD Type MOSFET N-Channel MOSFET IRF830S (KRF830S) ■ Features ● VDS (V) = 500V ● ID = 4.5 A (VGS = 10V) ● RDS(ON) < 1.5Ω (VGS = 10V) ● Fast Switching ● Repetitive Avalanche Rated D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±20 Tc=25℃ 4.5 Continuous Drain Current ID

See also transistors datasheet: IRF823 , IRF830 , IRF830A , IRF830AL , IRF830AS , IRF830FI , IRF830S , IRF831 , IRF9640 , IRF832 , IRF833 , IRF840 , IRF840A , IRF840A , IRF840AS , IRF840FI , IRF840S .

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 IRF831FI - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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