IRF843 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF843

Type of IRF843 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 450V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 7

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF843 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.1

Package: TO220

Equivalent transistors for IRF843

IRF843 PDF documents for downloads:

5.1. irf840_1.pdf Size:60K _philips

Philips Semiconductors Product specification PowerMOS transistor IRF840 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • High thermal cycling performance • Low thermal resistance ID = 8.5 A g RDS(ON) ? 0.85 ? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTION tab field-effect power transistor, intended for use in off-line switched 1 gate mode power supplies, T.V. and computer monitor power supplies, 2 drain d.c. to d.c. converters, motor control circuits and general purpose 3 source switching applications. tab drain 1 2 3 The IRF840 is supplied in the SOT78 (TO220AB) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ?C to 150?C - 500 V VDGR Drain-gate voltage Tj = 25 ?C to 150?C; RGS = 20 k? - 500 V

5.2. irf840.pdf Size:360K _st

IRF840 N-CHANNEL 500V - 0.75? - 8ATO-220 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRF840 500 V < 0.85 ? 8 A TYPICAL RDS(on) = 0.75 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 DESCRIPTION TO-220 The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns switching speed, gate charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS =20k?) 500 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 8A ID Drain Current

5.3. irf840f.pdf Size:188K _st

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V < 0.85 ? 8 A IRF840FI 500 V < 0.85 ? 4.5 A IRF841 450 V < 0.85 ? 8 A IRF841FI 450 V < 0.85 ? 4.5 A TYPICAL R = 0.74 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 3 3 100% AVALANCHE TESTED 2 2 1 1 REPETITIVE AVALANCHE DATA AT 100oC APPLICATIONS TO-220 ISOWATT220 HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF 840 841 840FI 841FI VDS Drain-source Voltage (VGS = 0) 500 450 500 450 V V Drain- gate Voltage (R = 20 k?) 500 450 500 450 V DGR GS VGS Gate-source Voltage ± 20 V o I Drain Current (cont.) at T = 25 C8 4.5 4.5 A 8 D c o ID Drain Current (cont.) at Tc = 100 C 5.1 5.1 2.8 2.8 A I (•) Drain Current (pulsed) 32 32 32 32 A DM o Ptot Total Dissipa

5.4. irf840a.pdf Size:99K _st

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V < 0.85 ? 8 A IRF840FI 500 V < 0.85 ? 4.5 A IRF841 450 V < 0.85 ? 8 A IRF841FI 450 V < 0.85 ? 4.5 A TYPICAL RDS(on) = 0.74 ? AVALANCHE RUGGED TECHNOLOGY 3 3 100% AVALANCHE TESTED 2 2 1 1 REPETITIVE AVALANCHE DATA AT 100oC APPLICATIONS TO-220 ISOWATT220 HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF 840 841 840FI 841FI VDS Drain-source Voltage (VGS = 0) 500 450 500 450 V V Drain- gate Voltage (R = 20 k?) 500 450 500 450 V D GR GS VGS Gate-source Voltage ± 20 V o I Drain Current (cont.) at T = 25 C 8 8 4.5 4.5 A D c o ID Drain Current (cont.) at Tc = 100 C 5.1 5.1 2.8 2.8 A I (•) Drain Current (pulsed) 32 32 32 32 A DM o Ptot Total Dissipat

5.5. irf840,841(th).pdf Size:188K _st

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V < 0.85 ? 8 A IRF840FI 500 V < 0.85 ? 4.5 A IRF841 450 V < 0.85 ? 8 A IRF841FI 450 V < 0.85 ? 4.5 A TYPICAL R = 0.74 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 3 3 100% AVALANCHE TESTED 2 2 1 1 REPETITIVE AVALANCHE DATA AT 100oC APPLICATIONS TO-220 ISOWATT220 HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF 840 841 840FI 841FI VDS Drain-source Voltage (VGS = 0) 500 450 500 450 V V Drain- gate Voltage (R = 20 k?) 500 450 500 450 V DGR GS VGS Gate-source Voltage ± 20 V o I Drain Current (cont.) at T = 25 C8 4.5 4.5 A 8 D c o ID Drain Current (cont.) at Tc = 100 C 5.1 5.1 2.8 2.8 A I (•) Drain Current (pulsed) 32 32 32 32 A DM o Ptot Total Dissipa

5.6. irf840b.pdf Size:911K _fairchild_semi

November 2001 IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.0A, 500V, RDS(on) = 0.8? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF840B Units IRFS840B VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C)

5.7. irf840lc.pdf Size:194K _international_rectifier

5.8. irf840spbf.pdf Size:666K _international_rectifier

PD-95136 IRF840SPbF • Lead-Free D2Pak 05/10/04 Document Number: 91071 www.vishay.com 1 IRF840SPbF Document Number: 91071 www.vishay.com 2 IRF840SPbF Document Number: 91071 www.vishay.com 3 IRF840SPbF Document Number: 91071 www.vishay.com 4 IRF840SPbF Document Number: 91071 www.vishay.com 5 IRF840SPbF Document Number: 91071 www.vishay.com 6 IRF840SPbF Document Number: 91071 www.vishay.com 7 IRF840SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 530S WIT H PART NUMBER L OT CODE 8024 INT E R NAT IONAL AS S E MB L E D ON WW 02, 2000 R E CT IF IE R F530S LOGO IN T H E AS S E MB L Y L INE "L " DAT E CODE Note: "P " in as s embly line YE AR 0 = 2000 AS S E MB L Y position indicates "Lead-Free" WE E K 02 LOT CODE LINE L OR PART NUMB E R INT E R N AT IONAL R E CT IF IE R F 530S LOGO DAT E CODE P = DE S IGNAT E S L E AD-F R E E ASSEMBL Y PRODUCT (OPT IO

5.9. irf840lcspbf_irf840lclpbf.pdf Size:458K _international_rectifier

PD- 95759 IRF840LCSPbF IRF840LCLPbF • Lead-Free 8/24/04 Document Number: 91068 www.vishay.com 1 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 2 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 3 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 4 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 5 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 6 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 7 IRF840LCS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H PART NUMB ER LOT CODE 8024 INT E RNAT IONAL AS S EMB LED ON WW 02, 2000 RE CT IF IER F 530S LOGO IN THE AS S EMBLY LINE "L" DAT E CODE Note: "P" in as s embly line YE AR 0 = 2000 AS SE MBLY pos ition indicates "Lead-F ree" WE EK 02 LOT CODE LINE L OR PART NUMBER INTE RNATIONAL RECT IFIER F530S LOGO DATE CODE P = DES IGNATE S LEAD-FRE E AS S EMBL Y PRODUCT (OPTIONAL) LOT

5.10. irf840s.pdf Size:172K _international_rectifier

5.11. irf840lcpbf.pdf Size:986K _international_rectifier

PD - 94883 IRF840LCPbF • Lead-Free 12/11/03 Document Number: 91067 www.vishay.com 1 IRF840LCPbF Document Number: 91067 www.vishay.com 2 IRF840LCPbF Document Number: 91067 www.vishay.com 3 IRF840LCPbF Document Number: 91067 www.vishay.com 4 IRF840LCPbF Document Number: 91067 www.vishay.com 5 IRF840LCPbF Document Number: 91067 www.vishay.com 6 IRF840LCPbF Document Number: 91067 www.vishay.com 7 IRF840LCPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (

5.12. irf840.pdf Size:170K _international_rectifier

5.13. irf840as.pdf Size:129K _international_rectifier

PD- 91901B IRF840AS SMPS MOSFET IRF840AL HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.85? 8.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and D2Pak TO-262 Avalanche Voltage and Current IRF840AS IRF840AL Effective Coss Specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.0 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.1 A IDM Pulsed Drain Current 32 PD @TC = 25°C Power Dissipation 125 W PD @TA = 25°C Power Dissipation 3.1 Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typ

5.14. irf840aspbf_irf840alpbf.pdf Size:673K _international_rectifier

PD- 95143 IRF840ASPbF SMPS MOSFET IRF840ALPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.85? 8.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and D2Pak TO-262 Avalanche Voltage and Current IRF840AS IRF840AL Effective Coss Specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.0 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.1 A IDM Pulsed Drain Current 32 PD @TC = 25°C Power Dissipation 125 W PD @TA = 25°C Power Dissipation 3.1 Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1

5.15. irf840a.pdf Size:199K _international_rectifier

PD- 94829 SMPS MOSFET IRF840APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.85? 8.0A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and S D Avalanche Voltage and Current G TO-220AB l Effective Coss Specified (See AN1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.0 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.1 A IDM Pulsed Drain Current 32 PD @TC = 25°C Power Dissipation 125 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ? 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•i

5.16. irf840pbf.pdf Size:1086K _international_rectifier

PD - 94882 IRF840PbF • Lead-Free www.irf.com 1 12/10/0 Document Number: 91070 www.vishay.com 1 IRF840PbF Document Number: 91070 www.vishay.com 2 IRF840PbF Document Number: 91070 www.vishay.com 3 IRF840PbF Document Number: 91070 www.vishay.com 4 IRF840PbF Document Number: 91070 www.vishay.com 5 IRF840PbF Document Number: 91070 www.vishay.com 6 IRF840PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X

5.17. irf840lcs.pdf Size:173K _international_rectifier

PD- 93766 IRF840LCS IRF840LCL HEXFET® Power MOSFET Ultra Low Gate Charge D Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS RDS(on) = 0.85? Extremely High Frequency Operation G Repetitive Avalanche Rated ID = 8.0A Description S This new series of low charge HEXFET® power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency and achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. These device improvements combined with the proven D2Pak TO-262 ruggedness and reliability that characterize of HEXFET IRF840LCS IRF840LCL power MOSFETs offer the de

5.18. irf840a.pdf Size:941K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 o Continuous Drain Current (TC=25 C) 8 ID A o C Continuous Drain Current (TC=100 ) 5.1 IDM Drain Current-Pulsed 1 32 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 640 O IAR Avalanche Current 1 8 A O EAR Repetitive Avalanche Energy 1 mJ 13.4 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.5 O Total Power Dissipation (TC=25 oC ) 134 W PD Linear Derating Factor W/ oC 1.08 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purpose

5.19. irf840l_sihf840l.pdf Size:161K _vishay

IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition • Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.85 • Repetitive Avalanche Rated Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION I2PAK Third generation Power MOSFETs from Vishay provide the (TO-262) designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The I2PAK (TO-262) is a power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance. S S The I2PAK (TO-262) is suitable for high current applications D G because of its low internal connection resistance and can N-Channel MOSFET dissipate up to 2.0 W. ORDERING INFORMATION Package I2PAK (

5.20. irf840lc_sihf840lc.pdf Size:197K _vishay

IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 500 • Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.85 • Enhanced 30 V VGS Rating RoHS* COMPLIANT • Reduced Ciss, Coss, Crss Qg (Max.) (nC) 39 • Extremely High Frequency Operation Qgs (nC) 10 • Repetitive Avalanche Rated Qgd (nC) 19 • Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D This new series of low charge Power MOSFETs achieve TO-220AB signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total G system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high S frequency applications. Frequencies of a few MHz at high D current are possible using the new low charge MOSFETs. G S These device impr

5.21. irf840a_sihf840a.pdf Size:206K _vishay

IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.85 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 38 COMPLIANT Ruggedness Qgs (nC) 9.0 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 18 and Current Configuration Single • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply G • High Speed Power Switching S TYPICAL SMPS TOPOLOGIES D G S • Two Transistor Forward • Half Bridge N-Channel MOSFET • Full Bridge ORDERING INFORMATION Package TO-220AB IRF840APbF Lead (Pb)-free SiHF840A-E3 IRF840A SnPb SiHF840A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 TC = 25 °C 8.0 Continuous

5.22. irf840_sihf840.pdf Size:195K _vishay

IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.85 RoHS* • Fast Switching Qg (Max.) (nC) 63 COMPLIANT • Ease of Paralleling Qgs (nC) 9.3 Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance S G and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF840PbF Lead (Pb)-free SiHF840-E3 IRF840 SnPb SiHF840 ABSOLUTE

5.23. irf840.pdf Size:141K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF840 ·FEATURES ·Drain Current –ID=8.0A@ TC=25? ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85?(Max) ·DESCRITION ·Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid and relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25? 125 W Max. Operating Junction Temperature 150 ? Tj Storage Temperature -55~150 ? Tstg ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.0 ?/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification

See also transistors datasheet: IRF840A , IRF840A , IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 , IRF9530 , IRF9130 , IRF9140 , IRF9230 , IRF9240 , IRF9410 , IRF9510 , IRF9510S , IRF9511 .

Keywords