IRF9511 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF9511

Type of IRF9511 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 20

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 3

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9511 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220

Equivalent transistors for IRF9511

IRF9511 PDF documents for downloads:

4.1. irf9510spbf.pdf Size:1061K _international_rectifier

PD- 95763 IRF9510SPbF • Lead-Free 06/06/05 Document Number: 91073 www.vishay.com 1 IRF9510SPbF Document Number: 91073 www.vishay.com 2 IRF9510SPbF Document Number: 91073 www.vishay.com 3 IRF9510SPbF Document Number: 91073 www.vishay.com 4 IRF9510SPbF Document Number: 91073 www.vishay.com 5 IRF9510SPbF Document Number: 91073 www.vishay.com 6 IRF9510SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent

4.2. irf9510pbf.pdf Size:1126K _international_rectifier

PD- 95410 IRF9510PbF • Lead-Free 06/15/04 Document Number: 91072 www.vishay.com 1 IRF9510PbF Document Number: 91072 www.vishay.com 2 IRF9510PbF Document Number: 91072 www.vishay.com 3 IRF9510PbF Document Number: 91072 www.vishay.com 4 IRF9510PbF Document Number: 91072 www.vishay.com 5 IRF9510PbF Document Number: 91072 www.vishay.com 6 IRF9510PbF Document Number: 91072 www.vishay.com 7 IRF9510PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - DRAIN 1- GATE 1- GATE 3 - 2- DRAIN SOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3

4.3. irf9510s.pdf Size:176K _international_rectifier

4.4. irf9510.pdf Size:171K _international_rectifier

4.5. irf9510_sihf9510.pdf Size:197K _vishay

IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 1.2 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 8.7 • 175 °C Operating Temperature Qgs (nC) 2.2 • Fast Switching Qgd (nC) 4.1 • Ease of Paralleling Configuration Single • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC S TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D D G levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9510PbF Lead (Pb

4.6. irf9510s_sihf9510s.pdf Size:172K _vishay

IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 • Surface Mount RDS(on) (?)VGS = - 10 V 1.2 • Available in Tape and Reel Qg (Max.) (nC) 8.7 • Dynamic dV/dt Rating Qgs (nC) 2.2 • Repetitive Avalanche Rated • P-Channel Qgd (nC) 4.1 • 175 °C Operating Temperature Configuration Single • Fast Switching • Compliant to RoHS Directive 2002/95/EC S DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides D G the highest power capability and the lowest possible D S on-resistance in any existing surface mount package. The P-Channel MOSFET D2PAK (TO-263) is suitable for high current applications because of its

See also transistors datasheet: IRF843 , IRF9130 , IRF9140 , IRF9230 , IRF9240 , IRF9410 , IRF9510 , IRF9510S , BUK455-200A , IRF9512 , IRF9513 , IRF9520 , IRF9520N , IRF9520NL , IRF9520NS , IRF9521 , IRF9522 .

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