MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF9540N
  IRF9540N
  IRF9540N
 
IRF9540N
  IRF9540N
  IRF9540N
 
IRF9540N
  IRF9540N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRFB3307Z
AUIRFB3607 ..BF1211R
BF1211WR ..BLF6G20-180RN
BLF6G20-230PRN ..BSC057N03MSG
BSC057N08NS3G ..BSS84PW
BSS84S6R ..BUK7225-55A
BUK7226-75A ..BUK9524-55A
BUK9528-55 ..BUZ903D
BUZ903DP ..CEE02N6G
CEF02N65A ..CEP35P10
CEP4060A ..DMG1012T
DMG1012UW ..ECG454
ECG455 ..FDB12N50U
FDB13AN06A0 ..FDD5N50NZF
FDD5N50U ..FDMC7660DC
FDMC7660S ..FDP036N10A
FDP036N10A ..FDS4141_F085
FDS4410 ..FDY101PZ
FDY102PZ ..FQD13N10
FQD13N10 ..FQPF5P20
FQPF630 ..FRS230D
FRS230H ..H2305N
H2N7000 ..HAT2038R
HAT2039R ..HUF75307P3
HUF75307T3ST ..IPA90R1K2C3
IPA90R340C3 ..IPD082N10N3G
IPD088N04LG ..IPI65R280C6
IPI65R380C6 ..IPP80N06S2L-06
IPP80N06S2L-07 ..IRF2204L
IRF2204S ..IRF640A
IRF640FI ..IRF7420
IRF7421D1 ..IRF9521
IRF9522 ..IRFF430
IRFF9024 ..IRFP054
IRFP054N ..IRFR2607Z
IRFR2905Z ..IRFS732
IRFS733 ..IRFU9222
IRFU9310 ..IRL640S
IRL641 ..IRLU3410
IRLU3636 ..IXFH15N60
IXFH15N80 ..IXFK55N50F
IXFK60N25Q ..IXFP6N120P
IXFP76N15T2 ..IXFV36N50P
IXFV36N50PS ..IXTA2R4N120P
IXTA300N04T2 ..IXTH3N100P
IXTH3N120 ..IXTP1N100P
IXTP1N120P ..IXTT110N10P
IXTT11P50 ..JANSR2N7411
JFTJ105 ..KMB6D6N30Q
KMB7D0DN40Q ..KU310N10D
KU310N10P ..MTB35N04J3
MTB35N06ZL ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD110N02R
NTD14N03R ..NTR4101
NTR4170N ..PHT11N06LT
PHT4NQ10LT ..PSMN1R1-30PL
PSMN1R2-25YL ..RF1S4N100SM
RF1S50N06LESM ..RJK03E2DNS
RJK03E3DNS ..RQJ0306FQDQS
RQJ0601DGDQS ..SDF12N100
SDF12N90 ..SFT1450
SFU2955 ..SMK0170I
SMK0260IS ..SML50W40
SML6017AFN ..SPI20N65C3
SPI21N50C3 ..SSG5509A
SSG6612N ..SSM3K43FS
SSM3K44FS ..SSRF90N06
SSRF90N06-10 ..STD120N4LF6
STD12N05 ..STE24N90
STE250N05 ..STI35N65M5
STI42N65M5 ..STP200N4F3
STP200N6F3 ..STP6N50
STP6N50FI ..STV5NA50
STV5NA80 ..TK11A45D
TK11A50D ..TPC6102
TPC6103 ..TPCA8108
TPCA8109 ..UT30P04
UT3310 ..ZDM4306N
ZDS020N60 ..ZXMP7A17G
ZXMP7A17K ..ZXMS6006SG
 
IRF9540N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF9540N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF9540N

Type of IRF9540N transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 140

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 23

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9540N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.117

Package: TO220AB

Equivalent transistors for IRF9540N

IRF9540N PDF doc:

1.1. irf9540n.pdf Size:125K _international_rectifier

IRF9540N
IRF9540N
PD - 91437B IRF9540N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175°C Operating Temperature Fast Switching RDS(on) = 0.117? P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Dr

1.2. irf9540ns.pdf Size:286K _international_rectifier

IRF9540N
IRF9540N
PD - 91483D IRF9540NS/L HEXFET® Power MOSFET l Advanced Process Technology D l Surface Mount (IRF9540S) VDSS = -100V l Low-profile through-hole (IRF9540L) l 175°C Operating Temperature RDS(on) = 0.117? l Fast Switching G l P-Channel ID = -23A l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in Pak TO-262 any existing surface mount package. The D2Pak is suitable D 2 for high current applications because of its low in

3.1. irf9540s.pdf Size:321K _international_rectifier

IRF9540N
IRF9540N
PD - 95699 IRF9540SPbF • Lead-Free 9/10/04 Document Number: 91079 www.vishay.com 1 IRF9540SPbF Document Number: 91079 www.vishay.com 2 IRF9540SPbF Document Number: 91079 www.vishay.com 3 IRF9540SPbF Document Number: 91079 www.vishay.com 4 IRF9540SPbF Document Number: 91079 www.vishay.com 5 IRF9540SPbF Document Number: 91079 www.vishay.com 6 IRF9540SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent

3.2. irf9540.pdf Size:926K _international_rectifier

IRF9540N
IRF9540N
PD - 94884 IRF9540PbF • Lead-Free 12/11/03 Document Number: 91078 www.vishay.com 1 IRF9540PbF Document Number: 91078 www.vishay.com 2 IRF9540PbF Document Number: 91078 www.vishay.com 3 IRF9540PbF Document Number: 91078 www.vishay.com 4 IRF9540PbF Document Number: 91078 www.vishay.com 5 IRF9540PbF Document Number: 91078 www.vishay.com 6 IRF9540PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15

3.3. irfp9140-43_irf9540-43.pdf Size:378K _samsung

IRF9540N
IRF9540N


3.4. irf9540s_sihf9540s.pdf Size:172K _vishay

IRF9540N
IRF9540N
IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 • Surface Mount RDS(on) (?)VGS = - 10 V 0.20 • Available in Tape and Reel Qg (Max.) (nC) 61 • Dynamic dV/dt Rating • Repetitive Avalanche Rated Qgs (nC) 14 • P-Channel Qgd (nC) 29 • 175 °C Operating Temperature • Fast Switching Configuration Single • Compliant to RoHS Directive 2002/95/EC S DESCRIPTION Third generation Power MOSFETs from Vishay provide the D2PAK (TO-263) designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D possible on-resistance in any existing surface mount G D package. The D2PAK (TO-263) is suitable for high current S P-Channel MOSFET applications because of its low

3.5. irf9540_sihf9540.pdf Size:202K _vishay

IRF9540N
IRF9540N
IRF9540, SiHF9540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 61 • 175 °C Operating Temperature Qgs (nC) 14 • Fast Switching Qgd (nC) 29 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D D G commercial-industrial applications at power dissipation P-Channel MOSFET levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9540PbF Lead (Pb)-f

See also transistors datasheet: IRF9530N , APT5015BLC , IRF9530NL , IRF9530NS , IRF9531 , IRF9532 , IRF9533 , IRF9540 , IRF540N , IRF9540NL , IRF9540NS , IRF9541 , IRF9542 , IRF9543 , IRF9610 , IRF9610S , IRF9611 .

Keywords

 IRF9540N Datasheet  IRF9540N Datenblatt  IRF9540N RoHS  IRF9540N Distributor
 IRF9540N Application Notes  IRF9540N Component  IRF9540N Circuit  IRF9540N Schematic
 IRF9540N Equivalent  IRF9540N Cross Reference  IRF9540N Data Sheet  IRF9540N Fiche Technique

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