IRF9630 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF9630

Type of IRF9630 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 74

Maximum drain-source voltage |Uds|, V: 200V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 6.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9630 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 700

Maximum drain-source on-state resistance (Rds), Ohm: 0.8

Package: TO220

Equivalent transistors for IRF9630

IRF9630 PDF documents for downloads:

1.1. irf9630pbf.pdf Size:2142K _international_rectifier

PD - 94958 IRF9630PbF • Lead-Free 01/29/04 Document Number: 91084 www.vishay.com 1 IRF9630PbF Document Number: 91084 www.vishay.com 2 IRF9630PbF Document Number: 91084 www.vishay.com 3 IRF9630PbF Document Number: 91084 www.vishay.com 4 IRF9630PbF Document Number: 91084 www.vishay.com 5 IRF9630PbF Document Number: 91084 www.vishay.com 6 IRF9630PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15

1.2. irf9630spbf.pdf Size:1045K _international_rectifier

PD- 95771 IRF9630SPbF • Lead-Free 06/06/05 Document Number: 91085 www.vishay.com 1 IRF9630SPbF Document Number: 91085 www.vishay.com 2 IRF9630SPbF Document Number: 91085 www.vishay.com 3 IRF9630SPbF Document Number: 91085 www.vishay.com 4 IRF9630SPbF Document Number: 91085 www.vishay.com 5 IRF9630SPbF Document Number: 91085 www.vishay.com 6 IRF9630SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent

1.3. irf9630s.pdf Size:179K _international_rectifier

1.4. irf9630.pdf Size:175K _international_rectifier

1.5. irf9630_sihf9630.pdf Size:197K _vishay

IRF9630, SiHF9630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 200 Available • Repetitive Avalanche Rated RDS(on) (Max.) (?)VGS = - 10 V 0.80 RoHS* • P-Channel Qg (Max.) (nC) 29 COMPLIANT • Fast Switching Qgs (nC) 5.4 • Ease of Paralleling Qgd (nC) 15 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC S DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D D G levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9630PbF Lead (Pb)-free SiHF9630-E3 IRF9

1.6. irf9630s_sihf9630s.pdf Size:171K _vishay

IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 200 • Surface Mount RDS(on) (?)VGS = - 10 V 0.80 • Available in Tape and Reel Qg (Max.) (nC) 29 • Dynamic dV/dt Rating Qgs (nC) 5.4 • Repetitive Avalanche Rated • P-Channel Qgd (nC) 15 • Fast Switching Configuration Single • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC S DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The D2PAK (TO263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible D G on-resistance in any existing surface mount package. The S D D2PAK (TO263) is suitable for high current applications P-Channel MOSFET because of its low internal

See also transistors datasheet: IRF9611 , IRF9612 , IRF9613 , IRF9620 , IRF9620S , IRF9621 , IRF9622 , IRF9623 , RFP50N06 , IRF9630S , IRF9631 , IRF9632 , IRF9633 , IRF9640 , IRF9640S , IRF9641 , IRF9642 .

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