IRF9Z12 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF9Z12

Type of IRF9Z12 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 20

Maximum drain-source voltage |Uds|, V: 50V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9Z12 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220

Equivalent transistors for IRF9Z12

IRF9Z12 PDF documents for downloads:

4.1. irf9z14spbf_irf9z14lpbf.pdf Size:1222K _international_rectifier

PD-96014 IRF9Z14SPbF IRF9Z14LPbF • Lead-Free 06/08/05 Document Number: 91088 www.vishay.com 1 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 2 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 3 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 4 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 5 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 6 IRF9Z14S/LPbF Document Number: 91088 www.vishay.com 7 IRF9Z14S/LPbF TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 PART NUMBER INTERNATIONAL ASSEMBLED ON WW 19, 1997 RECT IFIER IN THE ASS EMBLY LINE "C" LOGO DAT E CODE Note: "P" in assembly line YEAR 7 = 1997 position indicates "Lead-Free" AS SEMBLY WEEK 19 LOT CODE LINE C OR PART NUMBER INT ERNATIONAL RECTIFIER LOGO DAT E CODE P = DES IGNATES LEAD-FREE ASSEMBLY PRODUCT (OPTIONAL) LOT CODE YEAR 7 = 1997 WEEK 19 A = ASS E

4.2. irf9z10.pdf Size:385K _international_rectifier

PD - 90459A IRF9Z10 D S D G TO-220AB GDS Gate Drain Source 06/24/05 Document Number: 90118 www.vishay.com 1 IRF9Z10 Document Number: 90118 www.vishay.com 2 IRF9Z10 Document Number: 90118 www.vishay.com 3 IRF9Z10 Document Number: 90118 www.vishay.com 4 IRF9Z10 Document Number: 90118 www.vishay.com 5 IRF9Z10 Document Number: 90118 www.vishay.com 6 IRF9Z10 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor

4.3. irf9z14pbf.pdf Size:251K _international_rectifier

PD - 95628 IRF9Z14PbF • Lead-Free 8/3/04 Document Number: 91088 www.vishay.com 1 IRF9Z14PbF Document Number: 91088 www.vishay.com 2 IRF9Z14PbF Document Number: 91088 www.vishay.com 3 IRF9Z14PbF Document Number: 91088 www.vishay.com 4 IRF9Z14PbF Document Number: 91088 www.vishay.com 5 IRF9Z14PbF Document Number: 91088 www.vishay.com 6 IRF9Z14PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD Ri

4.4. irf9z14s.pdf Size:361K _international_rectifier

PD - 9.911A IRF9Z14S/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z14S) VDSS = -60V Low-profile through-hole (IRF9Z14L) 175°C Operating Temperature RDS(on) = 0.50? Fast Switching G P- Channel ID = -6.7A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 D Pa k TO-262 highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inte

4.5. irf9z14.pdf Size:173K _international_rectifier

4.6. irf9z14_sihf9z14.pdf Size:127K _vishay

IRF9Z14, SiHF9Z14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 60 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.50 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 12 • 175 °C Operating Temperature Qgs (nC) 3.8 • Fast Switching Qgd (nC) 5.1 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D D G levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9Z14PbF Lead (Pb)

4.7. irf9z10_sihf9z10.pdf Size:132K _vishay

IRF9Z10, SiHF9Z10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 60 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.50 RoHS* • P-Channel Qg (Max.) (nC) 12 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 3.8 • Fast Switching Qgd (nC) 5.1 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all S D commercial-industrial applications at power dissipation G D levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9Z10PbF Lead (Pb

4.8. irf9z14s_sihf9z14s_irf9z14l_sihf9z14l.pdf Size:169K _vishay

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) (?)VGS = - 10 V 0.50 • Surface Mount (IRF9Z14S, SiHF9Z14S) Qg (Max.) (nC) 12 • Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L) • 175 °C Operating Temperature Qgs (nC) 3.8 • Fast Switching Qgd (nC) 5.1 • P-Channel • Fully Avalanche Rated Configuration Single • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with S I2PAK (TO-262) D2PAK (TO-263) the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G G The D2PAK is a surface mount power package capabl

See also transistors datasheet: IRF9640 , IRF9640S , IRF9641 , IRF9642 , IRF9643 , IRF9952 , IRF9953 , IRF9Z10 , BF961 , IRF9Z14 , IRF9Z14S , IRF9Z15 , IRF9Z20 , IRF9Z22 , IRF9Z24 , IRF9Z24N , IRF9Z24NL .

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