MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF9Z34N
  IRF9Z34N
  IRF9Z34N
 
IRF9Z34N
  IRF9Z34N
  IRF9Z34N
 
IRF9Z34N
  IRF9Z34N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7316Q
AUIRF7319Q ..BF1105R
BF1105WR ..BLF548
BLF571 ..BSC022N03SG
BSC024NE2LS ..BSS138PW
BSS138W ..BUK663R5-55C
BUK663R7-75C ..BUK9506-55B
BUK9506-75B ..BUZ72A
BUZ73AH ..CED4311
CED540L ..CEP1186
CEP1195 ..CPH6442
CPH6443 ..DMP3020LSS
DMP3025LK3 ..FDA59N30
FDA69N25 ..FDD3680
FDD3682_F085 ..FDMA7672
FDMB3800N ..FDN308P
FDN327N ..FDR8305N
FDR8308P ..FDS9958
FDS9958_F085 ..FQB50N06L
FQB55N10 ..FQPF19N20
FQPF19N20C ..FRM430H
FRM430R ..H02N60SJ
H02N65E ..HAT1108C
HAT1110R ..HITK0203MP
HITK0204MP ..IPA60R160C6
IPA60R165CP ..IPB80N06S4-07
IPB80N06S4L-05 ..IPI45N06S4-09
IPI45N06S4L-08 ..IPP65R380E6
IPP65R600C6 ..IRF1404L
IRF1404S ..IRF6218
IRF6218S ..IRF7379
IRF7379I ..IRF8910G
IRF8915 ..IRFE110
IRFE120 ..IRFM250
IRFM340 ..IRFR111
IRFR120 ..IRFS620
IRFS620A ..IRFU4105
IRFU4105Z ..IRL521
IRL530 ..IRLSZ34A
IRLSZ44A ..IXFH12N100
IXFH12N100F ..IXFK33N50
IXFK34N80 ..IXFN80N50Q2
IXFN80N50Q3 ..IXFV12N120PS
IXFV12N80P ..IXTA1R4N120P
IXTA1R6N100D2 ..IXTH280N055T
IXTH28N50Q ..IXTP120N075T2
IXTP120P065T ..IXTQ75N10P
IXTQ76N25T ..J201
J202 ..KMB035N40DC
KMB050N60P ..KTK920BU
KTK920T ..MTB14P03Q8
MTB15P04J3 ..MTN15N50FP
MTN1634V8 ..MTP3N50E
MTP3N60 ..NDT452AP
NDT452P ..NTMS4800N
NTMS4801N ..PHP33N10
PHP33NQ20T ..PSMN026-80YS
PSMN027-100PS ..RD12MVP1
RD15HVF1 ..RJK0358DPA
RJK0358DSP ..RQ1C065UN
RQ1C075UN ..SDF044JAB-U
SDF054JAA-D ..SFR9214
SFR9220 ..SMG2339P
SMG2340N ..SML5040CN
SML5050AN ..SPD08N50C3
SPD08P06PG ..SSG4512CE
SSG4520H ..SSM3K15FV
SSM3K15TE ..SSP7460N
SSP7461P ..STB80NF55-08T4
STB80NF55L-06 ..STD8N06-1
STD8N06T4 ..STH85N15F4-2
STH8N80 ..STP15NM60ND
STP15NM65N ..STP5NA80
STP5NA80FI ..STU75N3LLH6
STU75N3LLH6-S ..TIS73
TIS74 ..TK8A45D
TK8A45DA ..TPCA8051-H
TPCA8052-H ..UT100N03-Q
UT108N03 ..WTC9435
WTD40N03 ..ZXMP10A18K
ZXMP2120E5 ..ZXMS6006SG
 
IRF9Z34N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF9Z34N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF9Z34N

Type of IRF9Z34N transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 56

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 17

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9Z34N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.1

Package: TO220AB

Equivalent transistors for IRF9Z34N

IRF9Z34N PDF doc:

1.1. irf9z34n.pdf Size:108K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.1485B IRF9Z34N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.10? P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drai

1.2. irf9z34ns.pdf Size:162K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.1525 IRF9Z34NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34NS) VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175°C Operating Temperature RDS(on) = 0.10? Fast Switching G P-Channel ID = -19A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low intern

3.1. irf9z34.pdf Size:174K _international_rectifier

IRF9Z34N
IRF9Z34N

3.2. irf9z34pbf.pdf Size:2039K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 94961 IRF9Z34PbF • Lead-Free 01/30/04 Document Number: 91092 www.vishay.com 1 IRF9Z34PbF Document Number: 91092 www.vishay.com 2 IRF9Z34PbF Document Number: 91092 www.vishay.com 3 IRF9Z34PbF Document Number: 91092 www.vishay.com 4 IRF9Z34PbF Document Number: 91092 www.vishay.com 5 IRF9Z34PbF Document Number: 91092 www.vishay.com 6 IRF9Z34PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15

3.3. irf9z34s.pdf Size:334K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.913A IRF9Z34S/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34S) VDSS = -60V Low-profile through-hole (IRF9Z34L) 175°C Operating Temperature RDS(on) = 0.14? Fast Switching G P- Channel ID = -18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal

3.4. irf9z34_sihf9z34.pdf Size:197K _vishay

IRF9Z34N
IRF9Z34N
IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 60 • Repetitive Avalanche Rated Available RDS(on) (?)VGS = - 10 V 0.14 • P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 9.9 • Fast Switching Qgd (nC) 16 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D commercial-industrial applications at power dissipation G D levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9Z34PbF Lead (Pb)-fre

3.5. irf9z34s_sihf9z34s_irf9z34l_sihf9z34l.pdf Size:168K _vishay

IRF9Z34N
IRF9Z34N
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) (?)VGS = - 10 V 0.14 • Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) • 175 °C Operating Temperature Qgs (nC) 9.9 • Fast Switching Qgd (nC) 16 • P-Channel • Fully Avalanche Rated Configuration Single • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize S advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with I2PAK (TO-262) D2PAK (TO-263) the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a G wide variety of applications. The D2PAK is a surface mount power package capable of

See also transistors datasheet: IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 , IRF9Z32 , IRF9Z34 , IRF250 , IRF9Z34NL , IRF9Z34NS , IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFB9N65A .

Keywords

 IRF9Z34N Datasheet  IRF9Z34N Datenblatt  IRF9Z34N RoHS  IRF9Z34N Distributor
 IRF9Z34N Application Notes  IRF9Z34N Component  IRF9Z34N Circuit  IRF9Z34N Schematic
 IRF9Z34N Equivalent  IRF9Z34N Cross Reference  IRF9Z34N Data Sheet  IRF9Z34N Fiche Technique

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