MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF9Z34N
  IRF9Z34N
  IRF9Z34N
 
IRF9Z34N
  IRF9Z34N
  IRF9Z34N
 
IRF9Z34N
  IRF9Z34N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP0203GMT-HF
AP02N40H-HF ..AP2306AGEN-HF
AP2306AGN-HF ..AP4409GEM
AP4409GEP-HF ..AP6680BGM-HF
AP6680BGYT-HF ..AP9487GM-HF
AP94T07GH-HF ..AP9974GJ-HF
AP9974GP-HF ..APT5040CNR
APT50M50JVFR ..AUIRFP4368
AUIRFP4410Z ..BF545B
BF545C ..BLF6G27LS-100
BLF6G27LS-135 ..BSC110N06NS3G
BSC118N10NSG ..BSZ110N06NS3G
BSZ120P03NS3EG ..BUK75150-55A
BUK7516-55A ..BUK9614-55
BUK9614-55A ..CEA3252
CEA6200 ..CEF630N
CEF6601 ..CEP840G
CEP840L ..DMG8601UFG
DMG8822UTS ..EFC4612R
EFC4615R ..FDB5680
FDB5690 ..FDD8424H
FDD8424H_F085 ..FDMC86102LZ
FDMC86106LZ ..FDP15N40
FDP15N40 ..FDS6294
FDS6294 ..FK14KM-9
FK14SM-10 ..FQD4P25
FQD5N20L ..FQS4903
FQT13N06 ..FRX130D4
FRX130H1 ..H5N2507P
H5N2508DL ..HAT2096H
HAT2099H ..HUF75339P3
HUF75339S3 ..IPB039N10N3G
IPB041N04NG ..IPD30N03S2L-10
IPD30N03S2L-20 ..IPI90N06S4-04
IPI90N06S4L-04 ..IPS50R520CP
IPU039N03LG ..IRF3205ZS
IRF330 ..IRF6622
IRF6623 ..IRF7501
IRF7503 ..IRF9640
IRF9640S ..IRFH5302
IRFH5302D ..IRFP233
IRFP240 ..IRFR420A
IRFR4615 ..IRFS9143
IRFS9230 ..IRFY044C
IRFY120 ..IRLHM630
IRLHS2242 ..IRLWZ34A
IRLWZ44A ..IXFH24N50
IXFH24N50Q ..IXFL32N120P
IXFL34N100 ..IXFR180N15P
IXFR18N90P ..IXFX20N120
IXFX20N120P ..IXTA60N10T
IXTA60N20T ..IXTH60N20L2
IXTH60N25 ..IXTP2N60P
IXTP2N80 ..IXTT50P085
IXTT50P10 ..KF3N50DS
KF3N50DZ ..KP103K
KP103L ..MCH6331
MCH6336 ..MTB90P06J3
MTB90P06Q8 ..MTN3418N3
MTN3418S3 ..NDB5060
NDB5060L ..NTD4860N
NTD4863N ..NTZD3154N
NTZD3155C ..PMBF4391
PMBF4392 ..PSMN3R0-60ES
PSMN3R0-60PS ..RFD15P06SM
RFD16N03L ..RJK0658DPA
RJK0659DPA ..RRH100P03
RRH140P03 ..SDF230JDA
SDF240 ..SGM0410S
SGM2305A ..SMK1060FJ
SMK1060P ..SML60B21
SML60B25 ..SPP15P10PG
SPP15P10PLH ..SSH40N15A
SSH40N20 ..SSM6J214FE
SSM6J215FE ..SST308
SST309 ..STD16NF06L
STD16NF25 ..STF10NM65N
STF11N52K3 ..STK22N06
STK23N05L ..STP22NF03L
STP22NM60N ..STP7NA40
STP7NA40FI ..STW14NK50Z
STW15N50 ..TK13J65U
TK13P25D ..TPC8026
TPC8027 ..TPCC8074
TPCC8076 ..UT4435
UT4446 ..ZVN4306AV
ZVN4306G ..ZXMS6006SG
 
IRF9Z34N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF9Z34N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF9Z34N

Type of IRF9Z34N transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 56

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 17

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9Z34N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.1

Package: TO220AB

Equivalent transistors for IRF9Z34N

IRF9Z34N PDF doc:

1.1. irf9z34n.pdf Size:108K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.1485B IRF9Z34N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.10? P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drai

1.2. irf9z34ns.pdf Size:162K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.1525 IRF9Z34NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34NS) VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175°C Operating Temperature RDS(on) = 0.10? Fast Switching G P-Channel ID = -19A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low intern

3.1. irf9z34.pdf Size:174K _international_rectifier

IRF9Z34N
IRF9Z34N

3.2. irf9z34pbf.pdf Size:2039K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 94961 IRF9Z34PbF • Lead-Free 01/30/04 Document Number: 91092 www.vishay.com 1 IRF9Z34PbF Document Number: 91092 www.vishay.com 2 IRF9Z34PbF Document Number: 91092 www.vishay.com 3 IRF9Z34PbF Document Number: 91092 www.vishay.com 4 IRF9Z34PbF Document Number: 91092 www.vishay.com 5 IRF9Z34PbF Document Number: 91092 www.vishay.com 6 IRF9Z34PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15

3.3. irf9z34s.pdf Size:334K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.913A IRF9Z34S/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34S) VDSS = -60V Low-profile through-hole (IRF9Z34L) 175°C Operating Temperature RDS(on) = 0.14? Fast Switching G P- Channel ID = -18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal

3.4. irf9z34_sihf9z34.pdf Size:197K _vishay

IRF9Z34N
IRF9Z34N
IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 60 • Repetitive Avalanche Rated Available RDS(on) (?)VGS = - 10 V 0.14 • P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 9.9 • Fast Switching Qgd (nC) 16 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D commercial-industrial applications at power dissipation G D levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9Z34PbF Lead (Pb)-fre

3.5. irf9z34s_sihf9z34s_irf9z34l_sihf9z34l.pdf Size:168K _vishay

IRF9Z34N
IRF9Z34N
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) (?)VGS = - 10 V 0.14 • Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) • 175 °C Operating Temperature Qgs (nC) 9.9 • Fast Switching Qgd (nC) 16 • P-Channel • Fully Avalanche Rated Configuration Single • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize S advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with I2PAK (TO-262) D2PAK (TO-263) the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a G wide variety of applications. The D2PAK is a surface mount power package capable of

See also transistors datasheet: IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 , IRF9Z32 , IRF9Z34 , IRF250 , IRF9Z34NL , IRF9Z34NS , IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFB9N65A .

Keywords

 IRF9Z34N Datasheet  IRF9Z34N Datenblatt  IRF9Z34N RoHS  IRF9Z34N Distributor
 IRF9Z34N Application Notes  IRF9Z34N Component  IRF9Z34N Circuit  IRF9Z34N Schematic
 IRF9Z34N Equivalent  IRF9Z34N Cross Reference  IRF9Z34N Data Sheet  IRF9Z34N Fiche Technique

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