MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF9Z34N
  IRF9Z34N
  IRF9Z34N
 
IRF9Z34N
  IRF9Z34N
  IRF9Z34N
 
IRF9Z34N
  IRF9Z34N
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK652R6-40C
BUK653R2-55C ..BUK9212-55B
BUK9213-30A ..BUZ46
BUZ50A ..CED16N10L
CED20P06 ..CEP02N6A
CEP02N6G ..CPH3350
CPH3351 ..DMP2104LP
DMP2104V ..FCPF7N60NT
FCPF7N60NT ..FDD18N20LZ
FDD18N20LZ ..FDMA291P
FDMA3023PZ ..FDMS86105
FDMS86105 ..FDPF5N60NZ
FDPF5N60NZ ..FDS8958B
FDS8978 ..FQB22P10TM_F085
FQB25N33TM_F085 ..FQP9N30
FQP9N90C ..FRL9230R
FRM130D ..GWM160-0055X1-SL
GWM160-0055X1-SL ..HAT1046R
HAT1047R ..HEPF2004
HEPF2007A ..IPA057N06N3G
IPA057N08N3G ..IPB80N04S2L-03
IPB80N04S3-03 ..IPI100N10S3-05
IPI100P03P3L-04 ..IPP60R199CP
IPP60R250CP ..IRF1010NS
IRF1010Z ..IRF610A
IRF610S ..IRF7326D2
IRF7328 ..IRF840I
IRF840S ..IRFBL10N60A
IRFBL12N50A ..IRFL1006
IRFL110 ..IRFPF50
IRFPG30 ..IRFS510A
IRFS520 ..IRFU2905Z
IRFU310 ..IRL3705Z
IRL3705ZL ..IRLR8726
IRLR8729 ..IXFE44N60
IXFE48N50Q ..IXFK230N20T
IXFK240N15T2 ..IXFN48N55
IXFN48N60P ..IXFT70N15
IXFT70N20Q3 ..IXTA152N085T7
IXTA15P15T ..IXTH220N055T
IXTH220N075T ..IXTN90N25L2
IXTN90P20P ..IXTQ40N50L2
IXTQ40N50Q ..IXTZ35N25MA
IXTZ35N25MB ..KMA2D4P20SA
KMA2D7DP20X ..KTK5132E
KTK5132S ..NDB4050L
NDB4060 ..NTD4815N
NTD4855N ..NTTFS5826NL
NTUD3127C ..PHX6ND50E
PHX7N60E ..PSMN2R6-40YS
PSMN2R7-30PL ..RFD7N10LE
RFD7N10LESM ..RJK1051DPB
RJK1052DPB ..RSD160P05
RSD175N10 ..SDF360JED
SDF3N90 ..SGSP319
SGSP321 ..SML1004RCN
SML1004RGN ..SMN03T80F
SMN03T80IS ..SSD12P10
SSD15N10 ..SSM3J05FU
SSM3J09FU ..SSM6L40TU
SSM6N04FU ..STB14NK60Z
STB14NM50N ..STD35NF3LL
STD38NH02L ..STF34NM60ND
STF35N65M5 ..STL60N32N3LL
STL60N3LLH5 ..STP36NF06L
STP38N06 ..STP9NK65ZFP
STP9NK70Z ..STW45NM60
STW45NM60D ..TK35S04K3L
TK3A60DA ..TPC8108
TPC8109 ..TPCP8206
TPCP8301 ..VN10LF
VN10LP ..ZXMN6A09K
ZXMN6A11DN8 ..ZXMS6006SG
 
IRF9Z34N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF9Z34N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF9Z34N

Type of IRF9Z34N transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 56

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 17

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9Z34N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.1

Package: TO220AB

Equivalent transistors for IRF9Z34N

IRF9Z34N PDF doc:

1.1. irf9z34ns.pdf Size:162K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.1525 IRF9Z34NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34NS) VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175°C Operating Temperature RDS(on) = 0.10? Fast Switching G P-Channel ID = -19A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low intern

1.2. irf9z34n.pdf Size:108K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.1485B IRF9Z34N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.10? P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drai

3.1. irf9z34.pdf Size:174K _international_rectifier

IRF9Z34N
IRF9Z34N

3.2. irf9z34pbf.pdf Size:2039K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 94961 IRF9Z34PbF • Lead-Free 01/30/04 Document Number: 91092 www.vishay.com 1 IRF9Z34PbF Document Number: 91092 www.vishay.com 2 IRF9Z34PbF Document Number: 91092 www.vishay.com 3 IRF9Z34PbF Document Number: 91092 www.vishay.com 4 IRF9Z34PbF Document Number: 91092 www.vishay.com 5 IRF9Z34PbF Document Number: 91092 www.vishay.com 6 IRF9Z34PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15

3.3. irf9z34s.pdf Size:334K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.913A IRF9Z34S/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34S) VDSS = -60V Low-profile through-hole (IRF9Z34L) 175°C Operating Temperature RDS(on) = 0.14? Fast Switching G P- Channel ID = -18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal

3.4. irf9z34s_sihf9z34s_irf9z34l_sihf9z34l.pdf Size:168K _vishay

IRF9Z34N
IRF9Z34N
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) (?)VGS = - 10 V 0.14 • Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) • 175 °C Operating Temperature Qgs (nC) 9.9 • Fast Switching Qgd (nC) 16 • P-Channel • Fully Avalanche Rated Configuration Single • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize S advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with I2PAK (TO-262) D2PAK (TO-263) the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a G wide variety of applications. The D2PAK is a surface mount power package capable of

3.5. irf9z34_sihf9z34.pdf Size:197K _vishay

IRF9Z34N
IRF9Z34N
IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 60 • Repetitive Avalanche Rated Available RDS(on) (?)VGS = - 10 V 0.14 • P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 9.9 • Fast Switching Qgd (nC) 16 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D commercial-industrial applications at power dissipation G D levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9Z34PbF Lead (Pb)-fre

See also transistors datasheet: IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 , IRF9Z32 , IRF9Z34 , IRF250 , IRF9Z34NL , IRF9Z34NS , IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFB9N65A .

Keywords

 IRF9Z34N Datasheet  IRF9Z34N Datenblatt  IRF9Z34N RoHS  IRF9Z34N Distributor
 IRF9Z34N Application Notes  IRF9Z34N Component  IRF9Z34N Circuit  IRF9Z34N Schematic
 IRF9Z34N Equivalent  IRF9Z34N Cross Reference  IRF9Z34N Data Sheet  IRF9Z34N Fiche Technique

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