MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF9Z34N
  IRF9Z34N
  IRF9Z34N
 
IRF9Z34N
  IRF9Z34N
  IRF9Z34N
 
IRF9Z34N
  IRF9Z34N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP3055A
MTP3055AFI ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF130JAA-S
SDF130JAA-U ..SFU9024
SFU9034 ..SMK0270F
SMK0460F ..SML601R3BN
SML601R3CN ..SPP02N60C3
SPP02N60S5 ..SSG9435
SSG9435BDY ..SSM3K48FU
SSM3K7002AF ..SSS1N50A
SSS1N60A ..STD12N05L
STD12N05L-1 ..STE250NS10
STE26N50 ..STI55NF03L
STI6N62K3 ..STP200NF04
STP200NF04L ..STP6N60FI
STP6N62K3 ..STV60N05
STV60N05-16 ..TK11A60D
TK11A65D ..TPC6105
TPC6106 ..TPCA8121
TPCA8128 ..UT3401
UT3401Z ..ZVN0120A
ZVN0124A ..ZXMS6002G
ZXMS6003G ..ZXMS6006SG
 
IRF9Z34N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF9Z34N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF9Z34N

Type of IRF9Z34N transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 56

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 17

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF9Z34N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.1

Package: TO220AB

Equivalent transistors for IRF9Z34N

IRF9Z34N PDF doc:

1.1. irf9z34n.pdf Size:108K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.1485B IRF9Z34N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.10? P-Channel G Fully Avalanche Rated ID = -19A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drai

1.2. irf9z34ns.pdf Size:162K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.1525 IRF9Z34NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34NS) VDSS = -55V Low-profile through-hole (IRF9Z34NL) 175°C Operating Temperature RDS(on) = 0.10? Fast Switching G P-Channel ID = -19A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low intern

3.1. irf9z34.pdf Size:174K _international_rectifier

IRF9Z34N
IRF9Z34N

3.2. irf9z34pbf.pdf Size:2039K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 94961 IRF9Z34PbF • Lead-Free 01/30/04 Document Number: 91092 www.vishay.com 1 IRF9Z34PbF Document Number: 91092 www.vishay.com 2 IRF9Z34PbF Document Number: 91092 www.vishay.com 3 IRF9Z34PbF Document Number: 91092 www.vishay.com 4 IRF9Z34PbF Document Number: 91092 www.vishay.com 5 IRF9Z34PbF Document Number: 91092 www.vishay.com 6 IRF9Z34PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15

3.3. irf9z34s.pdf Size:334K _international_rectifier

IRF9Z34N
IRF9Z34N
PD - 9.913A IRF9Z34S/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF9Z34S) VDSS = -60V Low-profile through-hole (IRF9Z34L) 175°C Operating Temperature RDS(on) = 0.14? Fast Switching G P- Channel ID = -18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal

3.4. irf9z34_sihf9z34.pdf Size:197K _vishay

IRF9Z34N
IRF9Z34N
IRF9Z34, SiHF9Z34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 60 • Repetitive Avalanche Rated Available RDS(on) (?)VGS = - 10 V 0.14 • P-Channel RoHS* Qg (Max.) (nC) 34 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 9.9 • Fast Switching Qgd (nC) 16 • Ease of Paralleling Configuration Single • Simple Drive Requirements S • Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D commercial-industrial applications at power dissipation G D levels to approximately 50 W. The low thermal resistance P-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF9Z34PbF Lead (Pb)-fre

3.5. irf9z34s_sihf9z34s_irf9z34l_sihf9z34l.pdf Size:168K _vishay

IRF9Z34N
IRF9Z34N
IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 60 • Advanced Process Technology RDS(on) (?)VGS = - 10 V 0.14 • Surface Mount (IRF9Z34S, SiHF9Z34S) Qg (Max.) (nC) 34 • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L) • 175 °C Operating Temperature Qgs (nC) 9.9 • Fast Switching Qgd (nC) 16 • P-Channel • Fully Avalanche Rated Configuration Single • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay utilize S advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with I2PAK (TO-262) D2PAK (TO-263) the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a G wide variety of applications. The D2PAK is a surface mount power package capable of

See also transistors datasheet: IRF9Z24N , IRF9Z24NL , IRF9Z24NS , IRF9Z24S , IRF9Z25 , IRF9Z30 , IRF9Z32 , IRF9Z34 , IRF250 , IRF9Z34NL , IRF9Z34NS , IRF9Z34S , IRF9Z35 , IRFB11N50A , IRFB9N30A , IRFB9N60A , IRFB9N65A .

Keywords

 IRF9Z34N Datasheet  IRF9Z34N Datenblatt  IRF9Z34N RoHS  IRF9Z34N Distributor
 IRF9Z34N Application Notes  IRF9Z34N Component  IRF9Z34N Circuit  IRF9Z34N Schematic
 IRF9Z34N Equivalent  IRF9Z34N Cross Reference  IRF9Z34N Data Sheet  IRF9Z34N Fiche Technique

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