MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFIZ44N
  IRFIZ44N
  IRFIZ44N
 
IRFIZ44N
  IRFIZ44N
  IRFIZ44N
 
IRFIZ44N
  IRFIZ44N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP0503GMT-HF
AP0504GH-HF ..AP2533GY-HF
AP2535GEY-HF ..AP4453GYT-HF
AP4455GEH-HF ..AP73T03GJ-HF
AP73T03GMT-HF ..AP9575GS-HF
AP9576GH ..AP9T18GEH
AP9T18GEJ ..ATP103
ATP104 ..AUIRFSL3004
AUIRFSL3107 ..BF996S
BF996SR ..BLF871
BLF871S ..BSN20
BSN254 ..BUK426-1000B
BUK436W-1000B ..BUK7624-55
BUK7624-55A ..BUK9MHH-65PNN
BUK9MJJ-55PSS ..CEB3205
CEB35P10 ..CEM3138
CEM3172 ..CEU02N7G-1
CEU02N9 ..DMN3033LSN
DMN3051L ..FCA76N60N
FCA76N60N ..FDC3612
FDC3612 ..FDG327NZ
FDG328P ..FDMS6673BZ
FDMS6681Z ..FDP7N50
FDP7N60NZ ..FDS6982
FDS6982AS ..FMD47-06KC5
FMD47-06KC5 ..FQP13N10L
FQP13N50 ..FRE9160R
FRE9260D ..FSL9130D
FSL9130R ..H7N0401LM
H7N0401LS ..HAT2192WP
HAT2193WP ..HUF76137S3S
HUF76139P3 ..IPB160N04S2-03
IPB160N04S2L-03 ..IPD65R380C6
IPD65R380E6 ..IPP08CN10LG
IPP08CN10NG ..IRC244
IRC250 ..IRF430
IRF440 ..IRF6810S
IRF6811S ..IRF7807
IRF7807A ..IRFB3607
IRFB3607G ..IRFI550A
IRFI610A ..IRFP4227
IRFP4229 ..IRFS243
IRFS244A ..IRFSL4410
IRFSL4410Z ..IRFZ44N
IRFZ44NL ..IRLML2060
IRLML2244 ..IXFA10N80P
IXFA110N15T2 ..IXFH6N100
IXFH6N100F ..IXFN150N15
IXFN160N30T ..IXFR90N30
IXFT10N100 ..IXFX66N50Q2
IXFX73N30Q ..IXTF230N085T
IXTF250N075T ..IXTK21N100
IXTK22N100L ..IXTP76N25T
IXTP76P10T ..IXTV270N055T2S
IXTV280N055T ..KF7N80F
KF80N08F ..KP740V
KP741A ..MMBF5458
MMBF5459 ..MTDN3018S6R
MTDN3154C6 ..MTN7000ZA3
MTN7000ZHA3 ..NDF08N60Z
NDF10N60Z ..NTHD3100C
NTHD3101F ..PHB191NQ06LT
PHB20N06T ..PMN40LN
PMN45EN ..PSMN9R0-25YLC
PSMN9R0-30LL ..RFP15P05SM
RFP15P06 ..RJK4006DPD
RJK4006DPP-M0 ..RT1E060XN
RTF015N03 ..SDF9240
SDF9N100GAF-D ..SI2305
SI2312 ..SML1004RKN
SML100A9 ..SMN0470F
SMN04L20D ..SSD20N06-90D
SSD20N10-130D ..SSM3J108TU
SSM3J109TU ..SSM6N05FU
SSM6N09FU ..STB150NF04
STB150NF55 ..STD3LN62K3
STD3N25-1 ..STF3LN62K3
STF3N62K3 ..STL65DN3LLH5
STL65N3LLH5 ..STP3LN62K3
STP3N100 ..STP9NK70ZFP
STP9NK90Z ..STW47NM60ND
STW48NM60N ..TK30J25D
TK30S06K3L ..TPC8105-H
TPC8107 ..TPCP8204
TPCP8205-H ..UTT100N08
UTT100P03 ..ZXMC10A816N8
ZXMC3A16DN8 ..ZXMS6006SG
 
IRFIZ44N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFIZ44N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFIZ44N

Type of IRFIZ44N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 38

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 28

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFIZ44N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.024

Package: TO220

Equivalent transistors for IRFIZ44N

IRFIZ44N PDF doc:

1.1. irfiz44n.pdf Size:106K _international_rectifier

IRFIZ44N
IRFIZ44N
PD - 9.1403A IRFIZ44N HEXFET® Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024? Fully Avalanche Rated G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation TO-220 FULLPAK capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO

3.1. irfiz44g.pdf Size:170K _international_rectifier

IRFIZ44N
IRFIZ44N

3.2. irfiz44g_sihfiz44g.pdf Size:1390K _vishay

IRFIZ44N
IRFIZ44N
IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 • 175 °C Operating Temperature Qgd (nC) 46 • Dynamic dV/dt Rating Configuration Single • Low Thermal Resistance D TO-220 FULLPAK • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional S insulating hardware in commercial-industrial applications. S D G N-Channel MOSFET The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mic

See also transistors datasheet: IRFIZ14A , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRF520 , IRFIZ46N , IRFIZ48N , IRFL014 , IRFL024N , IRFL1006 , IRFL110 , IRFL210 , IRFL214 .

Keywords

 IRFIZ44N Datasheet  IRFIZ44N Datenblatt  IRFIZ44N RoHS  IRFIZ44N Distributor
 IRFIZ44N Application Notes  IRFIZ44N Component  IRFIZ44N Circuit  IRFIZ44N Schematic
 IRFIZ44N Equivalent  IRFIZ44N Cross Reference  IRFIZ44N Data Sheet  IRFIZ44N Fiche Technique

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