MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFIZ44N
  IRFIZ44N
  IRFIZ44N
 
IRFIZ44N
  IRFIZ44N
  IRFIZ44N
 
IRFIZ44N
  IRFIZ44N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF36N60N
FCPF380N60 ..FDD1600N10ALZ
FDD1600N10ALZD ..FDMA8051L
FDMA86265P ..FDMS8460
FDMS8558S ..FDPF18N20FT_G
FDPF18N50 ..FDT86102LZ
FDT86106LZ ..FQD13N06L
FQD13N10 ..FQT4N25
FQT5P10 ..FSF250R
FSF254D ..H5N6001P
H6968CTS ..HAT2168H
HAT2168N ..HUF75852G3
HUF75852G3_F085 ..IPB083N10N3G
IPB08CNE8NG ..IPD50N04S4-08
IPD50N04S4-10 ..IPP041N12N3G
IPP042N03LG ..IPW60R125C6
IPW60R125CP ..IRF3705
IRF3707Z ..IRF6648
IRF6655 ..IRF7601
IRF7603 ..IRF9Z24N
IRF9Z24NL ..IRFH8334
IRFH8337 ..IRFP254A
IRFP255 ..IRFR9120
IRFR9120N ..IRFS9541
IRFS9542 ..IRFY9120C
IRFY9130 ..IRLI540A
IRLI540N ..IRLZ34NS
IRLZ40 ..IXFH30N50Q3
IXFH30N60P ..IXFM10N90
IXFM11N80 ..IXFR26N50
IXFR26N50Q ..IXFX26N90
IXFX27N80Q ..IXTA86N20T
IXTA88N085T ..IXTH6N90A
IXTH72N20 ..IXTP3N100P
IXTP3N110 ..IXTT82N25P
IXTT88N15 ..KF4N65P
KF4N80F ..KP505G
KP505V ..MCH6604
MCH6613 ..MTC2590V8
MTC2804Q8 ..MTN3N65FP
MTN40N03I3 ..NDB608A
NDB610A ..NTD5804N
NTD5805N ..NVTFS5820NL
NVTFS5826NL ..PMDPB65UP
PMF170XP ..PSMN4R4-80PS
PSMN4R5-30YLC ..RFD8P05SM
RFD8P06E ..RJK1054DPB
RJK1055DPB ..RSD200N10
RSE002N06 ..SDF20N60JEA
SDF20N60JEB ..SFU9214
SFU9220 ..SMK0170
SMK0170I ..SML50T47
SML50W40 ..SPD04N60C3
SPD04N60S5 ..SSG4480N
SSG4490N ..SSM3K131TU
SSM3K14T ..SSP7411P
SSP7421P ..STB5NK50Z
STB60N55F3 ..STD60N3LH5
STD60N55F3 ..STFW3N150
STFW4N150 ..STM122N
STM201N ..STP20NM60FD
STP20NM60FP ..STP6NA60FI
STP6NA80 ..STT3458N
STT3463P ..STW11NK100Z
STW11NK90Z ..TK13A65D
TK13A65U ..TPC8021-H
TPC8022-H ..TPCC8066-H
TPCC8067-H ..UT4411
UT4413 ..ZVN4206GV
ZVN4210A ..ZXMS6006SG
 
IRFIZ44N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFIZ44N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFIZ44N

Type of IRFIZ44N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 38

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 28

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFIZ44N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.024

Package: TO220

Equivalent transistors for IRFIZ44N

IRFIZ44N PDF doc:

1.1. irfiz44n.pdf Size:106K _international_rectifier

IRFIZ44N
IRFIZ44N
PD - 9.1403A IRFIZ44N HEXFET® Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024? Fully Avalanche Rated G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation TO-220 FULLPAK capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO

3.1. irfiz44g.pdf Size:170K _international_rectifier

IRFIZ44N
IRFIZ44N

3.2. irfiz44g_sihfiz44g.pdf Size:1390K _vishay

IRFIZ44N
IRFIZ44N
IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 • 175 °C Operating Temperature Qgd (nC) 46 • Dynamic dV/dt Rating Configuration Single • Low Thermal Resistance D TO-220 FULLPAK • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional S insulating hardware in commercial-industrial applications. S D G N-Channel MOSFET The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mic

See also transistors datasheet: IRFIZ14A , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRF520 , IRFIZ46N , IRFIZ48N , IRFL014 , IRFL024N , IRFL1006 , IRFL110 , IRFL210 , IRFL214 .

Keywords

 IRFIZ44N Datasheet  IRFIZ44N Datenblatt  IRFIZ44N RoHS  IRFIZ44N Distributor
 IRFIZ44N Application Notes  IRFIZ44N Component  IRFIZ44N Circuit  IRFIZ44N Schematic
 IRFIZ44N Equivalent  IRFIZ44N Cross Reference  IRFIZ44N Data Sheet  IRFIZ44N Fiche Technique

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