MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFIZ44N
  IRFIZ44N
  IRFIZ44N
 
IRFIZ44N
  IRFIZ44N
  IRFIZ44N
 
IRFIZ44N
  IRFIZ44N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP20N15E
MTP2301N3 ..NTB5405N
NTB5426N ..NTP6411AN
NTP6412AN ..PHP6ND50E
PHP79NQ08LT ..PSMN085-150K
PSMN0R9-25YLC ..RF1S25N06SM
RF1S30N06LESM ..RJK03B8DPA
RJK03B9DPA ..RQJ0301HGDQS
RQJ0302NGDQA ..SDF120JAB-D
SDF120JAB-S ..SFT1345
SFT1350 ..SMG5403
SMG5406 ..SML50J77
SML50L37 ..SPI11N65C3
SPI12N50C3 ..SSG4934N
SSG4935P ..SSM3K35FS
SSM3K35MFV ..SSR1N60A
SSR2N60A ..STD10NM50N
STD10NM60N ..STE100N20
STE140NF20D ..STI23NM60ND
STI24NM60N ..STP18NM80
STP190N55LF3 ..STP60NF06L
STP60NF10 ..STV40N10
STV4N100 ..TK100F04K3
TK100F04K3L ..TPC6006-H
TPC6007-H ..TPCA8088
TPCA8101 ..UT2327
UT2955 ..WTN9575
WTN9973 ..ZXMP6A16K
ZXMP6A17DN8 ..ZXMS6006SG
 
IRFIZ44N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFIZ44N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFIZ44N

Type of IRFIZ44N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 38

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 28

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFIZ44N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.024

Package: TO220

Equivalent transistors for IRFIZ44N

IRFIZ44N PDF doc:

1.1. irfiz44n.pdf Size:106K _international_rectifier

IRFIZ44N
IRFIZ44N
PD - 9.1403A IRFIZ44N HEXFET® Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024? Fully Avalanche Rated G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation TO-220 FULLPAK capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO

3.1. irfiz44g.pdf Size:170K _international_rectifier

IRFIZ44N
IRFIZ44N

3.2. irfiz44g_sihfiz44g.pdf Size:1390K _vishay

IRFIZ44N
IRFIZ44N
IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 • 175 °C Operating Temperature Qgd (nC) 46 • Dynamic dV/dt Rating Configuration Single • Low Thermal Resistance D TO-220 FULLPAK • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional S insulating hardware in commercial-industrial applications. S D G N-Channel MOSFET The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mic

See also transistors datasheet: IRFIZ14A , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRF520 , IRFIZ46N , IRFIZ48N , IRFL014 , IRFL024N , IRFL1006 , IRFL110 , IRFL210 , IRFL214 .

Keywords

 IRFIZ44N Datasheet  IRFIZ44N Datenblatt  IRFIZ44N RoHS  IRFIZ44N Distributor
 IRFIZ44N Application Notes  IRFIZ44N Component  IRFIZ44N Circuit  IRFIZ44N Schematic
 IRFIZ44N Equivalent  IRFIZ44N Cross Reference  IRFIZ44N Data Sheet  IRFIZ44N Fiche Technique

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