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IRFIZ44N MOSFET (IC) Datasheet. Cross Reference Search. IRFIZ44N Equivalent

Type Designator: IRFIZ44N

Type of IRFIZ44N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 38

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 28

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFIZ44N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.024

Package: TO220

IRFIZ44N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFIZ44N PDF doc:

1.1. irfiz44n.pdf Size:106K _international_rectifier

IRFIZ44N
IRFIZ44N

PD - 9.1403A IRFIZ44N HEXFET® Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024? Fully Avalanche Rated G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico

3.1. irfiz44g.pdf Size:170K _international_rectifier

IRFIZ44N
IRFIZ44N

3.2. irfiz44g_sihfiz44g.pdf Size:1390K _vishay

IRFIZ44N
IRFIZ44N

IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 60 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 0.028 f = 60 Hz) RoHS* Qg (Max.) (nC) 95 COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 • 175 °C Operating Temperature Qgd (nC) 46 • Dynamic dV/dt Rating Configuration Single • L

See also transistors datasheet: IRFIZ14A , IRFIZ24A , IRFIZ24E , IRFIZ24N , IRFIZ34A , IRFIZ34E , IRFIZ34N , IRFIZ44A , IRF520 , IRFIZ46N , IRFIZ48N , IRFL014 , IRFL024N , IRFL1006 , IRFL110 , IRFL210 , IRFL214 .

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 IRFIZ44N - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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