MOSFET Datasheet



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IRFM044
  IRFM044
  IRFM044
 
IRFM044
  IRFM044
  IRFM044
 
IRFM044
  IRFM044
 
 
List
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
IRFM044 MOSFET DataSheet. BJT, Power MOSFET, IGBT, IC Catalog
 

IRFM044 MOSFET (IC) Datasheet. Cross Reference Search. IRFM044 Equivalent

Type Designator: IRFM044

Type of IRFM044 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 35

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFM044 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2400

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO254

Equivalent transistors for IRFM044 - Cross-Reference Search

 

IRFM044 PDF doc:

1.1. irfm044.pdf Size:189K _international_rectifier

IRFM044
IRFM044
PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the Dy

5.1. irfm054.pdf Size:190K _international_rectifier

IRFM044
IRFM044
PD - 90709B IRFM054 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM054 0.027 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the D

5.2. irfm064.pdf Size:187K _international_rectifier

IRFM044
IRFM044
PD - 90875A IRFM064 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM064 0.017 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the D

5.3. irfm014a.pdf Size:939K _samsung

IRFM044
IRFM044
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 60V 2 ? Lower RDS(ON) : 0.097 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TA=25 oC ) 2.8 ID A Continuous Drain Current (TA=70 oC) 2.25 1 IDM Drain Current-Pulsed 22 A O VGS Gate-to-Source Voltage _ V 20 EAS Single Pulsed Avalanche Energy 2 mJ O 67 IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 1 mJ O 0.21 dv/dt Peak Diode Recovery dv/dt 3 5.5 V/ns O 2.1 W PD Total Power Dissipation (TA=25 oC )* * Linear Derating Factor W/ o 0.017 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300

See also transistors datasheet: IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A , 2SK3569 , IRFM054 , IRFM110A , IRFM120A , IRFM140 , IRFM150 , IRFM210A , IRFM214A , IRFM220A .

Keywords

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 IRFM044 RoHS Compliant IRFM044 Service IRFM044 Triacs IRFM044 Semiconductor
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