MOSFET Datasheet


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IRFM044
  IRFM044
  IRFM044
 
IRFM044
  IRFM044
  IRFM044
 
IRFM044
  IRFM044
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP09N20H-HF
AP09N20J-HF ..AP2732GK
AP2761I-A ..AP4513GH-A
AP4513GM-HF ..AP85U03GH-HF
AP85U03GM-HF ..AP95T08GP
AP95T10AGI-HF ..APT1003R5BN
APT1003R5CN ..AUIRF1324S
AUIRF1324S-7P ..AUIRL1404Z
AUIRL1404ZL ..BFL4001
BFL4004 ..BLS6G2731S-120
BLS6G2731S-130 ..BSO303PH
BSO303SPH ..BUK545-100A
BUK545-100B ..BUK7908-40AIE
BUK7909-75AIE ..BUP67
BUP68 ..CEB84A4
CEB85A3 ..CEM6188
CEM6426 ..CEU4204
CEU4269 ..DMN5L06DWK
DMN5L06K ..FCH76N60NF
FCI25N60N_F102 ..FDC638APZ
FDC638P ..FDH3632
FDH3632 ..FDMS7672
FDMS7672 ..FDPF12N60NZ
FDPF13N50FT ..FDS8870
FDS8870 ..FQA40N25
FQA44N30 ..FQP3N80C
FQP3P20 ..FRK260H
FRK260R ..FW274
FW282 ..H7P1002DS
H7P1006MD90TZ ..HAT2266H
HAT2267H ..HUF76443P3
HUF76443S3S ..IPB60R099CP
IPB60R099CPA ..IPG20N04S4-09
IPG20N04S4-12 ..IPP180N10N3G
IPP200N15N3G ..IRC830-008
IRC8305 ..IRF530FI
IRF530N ..IRF7241
IRF730 ..IRF820AL
IRF820AS ..IRFB59N10D
IRFB61N15D ..IRFI9540N
IRFI9620G ..IRFP470
IRFP4710 ..IRFS352
IRFS353 ..IRFU024N
IRFU025 ..IRL2203N
IRL2203NL ..IRLR120N
IRLR130A ..IXFB62N80Q3
IXFB70N60Q2 ..IXFK100N25
IXFK102N30P ..IXFN32N100Q3
IXFN32N120 ..IXFT26N50Q
IXFT26N60P ..IXKP13N60C5M
IXKP20N60C5 ..IXTH140P05T
IXTH14N100 ..IXTM15N60
IXTM20N60 ..IXTQ160N075T
IXTQ160N085T ..IXTY08N100P
IXTY08N50D2 ..KHB4D0N65F2
KHB4D0N65P ..KP750B
KP750B1 ..MPF102
MPF4393 ..MTE20N10FP
MTE50N10FP ..MTNK5C3
MTNK5N3 ..NDP6051L
NDP6060 ..NTLJS3113P
NTLJS4114N ..PHB8N50E
PHB8ND50E ..PMZ760SN
PN4091 ..R6006ANX
R6008ANX ..RFT2P03L
RFT3055LE ..RJK6012DPE
RJK6013DPE ..RW1A030AP
RW1C015UN ..SE3406
SE3407 ..SIF2N65C
SIF2N65D ..SML20L100
SML20S56 ..SPA08N80C3
SPA11N60C3 ..SSE90N08-08
SSE90N10-14 ..SSM3J313T
SSM3J314T ..SSM6P25TU
SSM6P26TU ..STB25NM60ND
STB26NM60N ..STD4NK50Z-1
STD4NK50ZD ..STFI20NK50Z
STFW12N120K5 ..STP10N62K3
STP10NA40 ..STP4N150
STP4N20 ..STS5PF30L
STS6NF20V ..STY60NM50
STY60NM60 ..TK4P60DB
TK50F15J1 ..TPC8213-H
TPC8214-H ..TPCS8303
TPCT4201 ..UTT4425
UTT4815 ..ZXMN2088DE6
ZXMN20B28K ..ZXMS6006SG
 
IRFM044 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFM044 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFM044

Type of IRFM044 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 35

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFM044 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2400

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO254

Equivalent transistors for IRFM044

IRFM044 PDF doc:

1.1. irfm044.pdf Size:189K _international_rectifier

IRFM044
IRFM044
PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the Dy

5.1. irfm054.pdf Size:190K _international_rectifier

IRFM044
IRFM044
PD - 90709B IRFM054 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM054 0.027 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the D

5.2. irfm064.pdf Size:187K _international_rectifier

IRFM044
IRFM044
PD - 90875A IRFM064 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM064 0.017 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the D

5.3. irfm014a.pdf Size:939K _samsung

IRFM044
IRFM044
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 60V 2 ? Lower RDS(ON) : 0.097 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TA=25 oC ) 2.8 ID A Continuous Drain Current (TA=70 oC) 2.25 1 IDM Drain Current-Pulsed 22 A O VGS Gate-to-Source Voltage _ V 20 EAS Single Pulsed Avalanche Energy 2 mJ O 67 IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 1 mJ O 0.21 dv/dt Peak Diode Recovery dv/dt 3 5.5 V/ns O 2.1 W PD Total Power Dissipation (TA=25 oC )* * Linear Derating Factor W/ o 0.017 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300

See also transistors datasheet: IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A , 2SK3569 , IRFM054 , IRFM110A , IRFM120A , IRFM140 , IRFM150 , IRFM210A , IRFM214A , IRFM220A .

Keywords

 IRFM044 Datasheet  IRFM044 Datenblatt  IRFM044 RoHS  IRFM044 Distributor
 IRFM044 Application Notes  IRFM044 Component  IRFM044 Circuit  IRFM044 Schematic
 IRFM044 Equivalent  IRFM044 Cross Reference  IRFM044 Data Sheet  IRFM044 Fiche Technique

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