MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFM044
  IRFM044
  IRFM044
 
IRFM044
  IRFM044
  IRFM044
 
IRFM044
  IRFM044
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..NTB5404N
NTB5405N ..NTP6410AN
NTP6411AN ..PHP6N60E
PHP6ND50E ..PSMN070-200P
PSMN085-150K ..RF1S22N10SM
RF1S25N06SM ..RJK03B7DPA
RJK03B8DPA ..RQJ0204XGDQA
RQJ0301HGDQS ..SDF120JAA-U
SDF120JAB-D ..SFT1342
SFT1345 ..SMG3407
SMG5403 ..SML50J50
SML50J77 ..SPI11N60S5
SPI11N65C3 ..SSG4932N
SSG4934N ..SSM3K35CT
SSM3K35FS ..SSR1N50A
SSR1N60A ..STD10NF10
STD10NM50N ..STD9NM60N
STE100N20 ..STI22NM60N
STI23NM60ND ..STP18NM60N
STP18NM80 ..STP60NF06FP
STP60NF06L ..STV40N05
STV40N10 ..TK09H90A
TK100F04K3 ..TPC6005
TPC6006-H ..TPCA8087
TPCA8088 ..UT2321
UT2327 ..WTN9435
WTN9575 ..ZXMP6A16DN8
ZXMP6A16K ..ZXMS6006SG
 
IRFM044 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFM044 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFM044

Type of IRFM044 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 35

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFM044 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2400

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO254

Equivalent transistors for IRFM044

IRFM044 PDF doc:

1.1. irfm044.pdf Size:189K _international_rectifier

IRFM044
IRFM044
PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the Dy

5.1. irfm054.pdf Size:190K _international_rectifier

IRFM044
IRFM044
PD - 90709B IRFM054 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM054 0.027 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the D

5.2. irfm064.pdf Size:187K _international_rectifier

IRFM044
IRFM044
PD - 90875A IRFM064 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM064 0.017 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the D

5.3. irfm014a.pdf Size:939K _samsung

IRFM044
IRFM044
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 60V 2 ? Lower RDS(ON) : 0.097 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TA=25 oC ) 2.8 ID A Continuous Drain Current (TA=70 oC) 2.25 1 IDM Drain Current-Pulsed 22 A O VGS Gate-to-Source Voltage _ V 20 EAS Single Pulsed Avalanche Energy 2 mJ O 67 IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 1 mJ O 0.21 dv/dt Peak Diode Recovery dv/dt 3 5.5 V/ns O 2.1 W PD Total Power Dissipation (TA=25 oC )* * Linear Derating Factor W/ o 0.017 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300

See also transistors datasheet: IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A , 2SK3569 , IRFM054 , IRFM110A , IRFM120A , IRFM140 , IRFM150 , IRFM210A , IRFM214A , IRFM220A .

Keywords

 IRFM044 Datasheet  IRFM044 Datenblatt  IRFM044 RoHS  IRFM044 Distributor
 IRFM044 Application Notes  IRFM044 Component  IRFM044 Circuit  IRFM044 Schematic
 IRFM044 Equivalent  IRFM044 Cross Reference  IRFM044 Data Sheet  IRFM044 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages