MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFM044
  IRFM044
  IRFM044
 
IRFM044
  IRFM044
  IRFM044
 
IRFM044
  IRFM044
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP02N70EJ
AP02N90H-HF ..AP2311GK-HF
AP2311GN-HF ..AP4419GH
AP4419GJ ..AP6921GMT-HF
AP6922GMT-HF ..AP9561GH-HF
AP9561GI-HF ..AP9980GH
AP9980GJ ..APT6027HVR
APT6030BN ..AUIRFR3504
AUIRFR3504Z ..BF904AR
BF904AWR ..BLF7G10LS-250
BLF7G15LS-200 ..BSC190N15NS3G
BSC196N10NSG ..BSZ42DN25NS3G
BSZ440N10NS3G ..BUK7535-55A
BUK753R1-40B ..BUK9628-100A
BUK9628-55 ..CEB04N7G
CEB05N65 ..CEG8208
CEH2288 ..CES2306
CES2307 ..DMN2005K
DMN2005LP4K ..EMH2801
F5001H ..FDB8160_F085
FDB8160_F085 ..FDD86102
FDD86102 ..FDMC8884
FDMC8884 ..FDP2572
FDP2614 ..FDS6673BZ
FDS6673BZ_F085 ..FK16VS-6
FK18SM-10 ..FQD7N30
FQD7P06 ..FQT7N10L
FQU10N20C ..FSF250D
FSF250R ..H5N3004P
H5N3005LD ..HAT2139H
HAT2140H ..HUF75545S3S
HUF75623P3 ..IPB065N06LG
IPB065N15N3G ..IPD35N10S3L-26
IPD400N06NG ..IPP030N10N3G
IPP032N06N3G ..IPW60R041C6
IPW60R045CP ..IRF3703
IRF3704Z ..IRF6645
IRF6646 ..IRF7530
IRF7555 ..IRF9Z20
IRF9Z22 ..IRFH8325
IRFH8330 ..IRFP251
IRFP252 ..IRFR9024N
IRFR9024NC ..IRFS9532
IRFS9533 ..IRFY9120
IRFY9120C ..IRLI530N
IRLI540A ..IRLZ34NL
IRLZ34NS ..IXFH30N50P
IXFH30N50Q3 ..IXFM10N100
IXFM10N90 ..IXFR26N120P
IXFR26N50 ..IXFX26N60Q
IXFX26N90 ..IXTA80N12T2
IXTA86N20T ..IXTH6N90
IXTH6N90A ..IXTP3N100D2
IXTP3N100P ..IXTT80N20L
IXTT82N25P ..KF4N65F
KF4N65P ..KP505B
KP505G ..MCH6603
MCH6604 ..MTBC7N10N3
MTC1016S6R ..MTN3N60J3
MTN3N65FP ..NDB6060L
NDB608A ..NTD5413N
NTD5414N ..NVMFS4841N
NVTFS4823N ..PMBFJ211
PMBFJ212 ..PSMN4R0-40YS
PSMN4R1-30YLC ..RFD4N06L
RFD4N06LSM ..RJK1028DPA
RJK1028DSP ..RSD140P06
RSD150N06 ..SDF360JEB
SDF360JEC ..SGSP316
SGSP317 ..SMK1820D
SMK1820D2 ..SML801R2AN
SML801R2BN ..SPS03N60C3
SPS04N60C3 ..SSH6N60
SSH6N70 ..SSM6J51TU
SSM6J53FE ..SSW1N60A
SSW2N60A ..STD17NF25
STD18N55M5 ..STF14NM50N
STF15NM60ND ..STK7002
STK7006P ..STP28NM50N
STP2N60 ..STP80NF12
STP80NF55-06 ..STW20NA50
STW20NK50Z ..TK15J60T
TK15J60U ..TPC8041
TPC8042 ..TPCF8102
TPCF8103 ..UT65N03
UT6898 ..ZVNL535A
ZVP0120A ..ZXMS6006SG
 
IRFM044 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFM044 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFM044

Type of IRFM044 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 35

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFM044 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2400

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO254

Equivalent transistors for IRFM044

IRFM044 PDF doc:

1.1. irfm044.pdf Size:189K _international_rectifier

IRFM044
IRFM044
PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the Dy

5.1. irfm054.pdf Size:190K _international_rectifier

IRFM044
IRFM044
PD - 90709B IRFM054 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM054 0.027 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the D

5.2. irfm064.pdf Size:187K _international_rectifier

IRFM044
IRFM044
PD - 90875A IRFM064 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM064 0.017 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the D

5.3. irfm014a.pdf Size:939K _samsung

IRFM044
IRFM044
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 60V 2 ? Lower RDS(ON) : 0.097 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TA=25 oC ) 2.8 ID A Continuous Drain Current (TA=70 oC) 2.25 1 IDM Drain Current-Pulsed 22 A O VGS Gate-to-Source Voltage _ V 20 EAS Single Pulsed Avalanche Energy 2 mJ O 67 IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 1 mJ O 0.21 dv/dt Peak Diode Recovery dv/dt 3 5.5 V/ns O 2.1 W PD Total Power Dissipation (TA=25 oC )* * Linear Derating Factor W/ o 0.017 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300

See also transistors datasheet: IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A , 2SK3569 , IRFM054 , IRFM110A , IRFM120A , IRFM140 , IRFM150 , IRFM210A , IRFM214A , IRFM220A .

Keywords

 IRFM044 Datasheet  IRFM044 Datenblatt  IRFM044 RoHS  IRFM044 Distributor
 IRFM044 Application Notes  IRFM044 Component  IRFM044 Circuit  IRFM044 Schematic
 IRFM044 Equivalent  IRFM044 Cross Reference  IRFM044 Data Sheet  IRFM044 Fiche Technique

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