MOSFET Datasheet


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IRFM044
  IRFM044
  IRFM044
 
IRFM044
  IRFM044
  IRFM044
 
IRFM044
  IRFM044
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK653R2-55C
BUK653R3-30C ..BUK9213-30A
BUK9214-30A ..BUZ50A
BUZ50A-220M ..CED20P06
CED20P10 ..CEP02N6G
CEP02N7G ..CPH3351
CPH3355 ..DMP2104V
DMP210DUDJ ..FCPF7N60NT
FCPF9N60NT ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA3023PZ
FDMA3028N ..FDMS86105
FDMS86200 ..FDPF5N60NZ
FDPF680N10T ..FDS8978
FDS8978 ..FQB25N33TM_F085
FQB27P06 ..FQP9N90C
FQP9P25 ..FRM130D
FRM130H ..GWM160-0055X1-SL
GWM160-0055X1-SMD ..HAT1047R
HAT1047RJ ..HEPF2007A
HIRF630 ..IPA057N08N3G
IPA075N15N3G ..IPB80N04S3-03
IPB80N04S3-04 ..IPI100P03P3L-04
IPI110N20N3G ..IPP60R250CP
IPP60R280C6 ..IRF1010Z
IRF1010ZL ..IRF610S
IRF611 ..IRF7328
IRF7329 ..IRF840S
IRF841 ..IRFBL12N50A
IRFD014 ..IRFL110
IRFL210 ..IRFPG30
IRFPG40 ..IRFS520
IRFS520A ..IRFU310
IRFU310A ..IRL3705ZL
IRL3705ZS ..IRLR8729
IRLR8743 ..IXFE48N50Q
IXFE48N50QD2 ..IXFK240N15T2
IXFK24N100 ..IXFN48N60P
IXFN50N50 ..IXFT70N20Q3
IXFT74N20 ..IXTA15P15T
IXTA160N04T2 ..IXTH220N075T
IXTH22N50P ..IXTN90P20P
IXTP01N100D ..IXTQ40N50Q
IXTQ42N25P ..IXTZ35N25MB
IXTZ42N20MA ..KMA2D7DP20X
KMA2D8P20X ..KTK5132S
KTK5132U ..NDB4060
NDB4060L ..NTD4855N
NTD4856N ..NTUD3127C
NTUD3169CZ ..PHX7N60E
PHX8N50E ..PSMN2R7-30PL
PSMN2R8-40PS ..RFD7N10LESM
RFD8P05 ..RJK1052DPB
RJK1053DPB ..RSD175N10
RSD200N05 ..SDF3N90
SDF40N50JAM ..SGSP321
SGSP322 ..SML1004RGN
SML1004RKN ..SMN03T80IS
SMN0470F ..SSD15N10
SSD20N06-90D ..SSM3J09FU
SSM3J108TU ..SSM6N04FU
SSM6N05FU ..STB14NM50N
STB150NF04 ..STD38NH02L
STD3LN62K3 ..STF35N65M5
STF3LN62K3 ..STL60N3LLH5
STL65DN3LLH5 ..STP38N06
STP3LN62K3 ..STP9NK70Z
STP9NK70ZFP ..STW45NM60D
STW47NM60ND ..TK3A60DA
TK3A65D ..TPC8109
TPC8110 ..TPCP8301
TPCP8302 ..WTK6679
WTK6680 ..ZXMP3F35N8
ZXMP3F36N8 ..ZXMS6006SG
 
IRFM044 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFM044 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFM044

Type of IRFM044 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 35

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFM044 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2400

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO254

Equivalent transistors for IRFM044

IRFM044 PDF doc:

1.1. irfm044.pdf Size:189K _international_rectifier

IRFM044
IRFM044
PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the Dy

5.1. irfm064.pdf Size:187K _international_rectifier

IRFM044
IRFM044
PD - 90875A IRFM064 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM064 0.017 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the D

5.2. irfm054.pdf Size:190K _international_rectifier

IRFM044
IRFM044
PD - 90709B IRFM054 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM054 0.027 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA transistors also feature all of the well-established advan- tages of MOSFETs, such as voltage control, very fast switch- Features: ing, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switch- Simple Drive Requirements ing power supplies, motor controls, inverters, choppers, Ease of Paralleling audio amplifiers, high energy pulse circuits, and virtually Hermetically Sealed any application where high reliability is required. The Electrically Isolated HEXFET transistor’s totally isolated package eliminates the D

5.3. irfm014a.pdf Size:939K _samsung

IRFM044
IRFM044
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 60V 2 ? Lower RDS(ON) : 0.097 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TA=25 oC ) 2.8 ID A Continuous Drain Current (TA=70 oC) 2.25 1 IDM Drain Current-Pulsed 22 A O VGS Gate-to-Source Voltage _ V 20 EAS Single Pulsed Avalanche Energy 2 mJ O 67 IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 1 mJ O 0.21 dv/dt Peak Diode Recovery dv/dt 3 5.5 V/ns O 2.1 W PD Total Power Dissipation (TA=25 oC )* * Linear Derating Factor W/ o 0.017 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300

See also transistors datasheet: IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A , 2SK3569 , IRFM054 , IRFM110A , IRFM120A , IRFM140 , IRFM150 , IRFM210A , IRFM214A , IRFM220A .

Keywords

 IRFM044 Datasheet  IRFM044 Datenblatt  IRFM044 RoHS  IRFM044 Distributor
 IRFM044 Application Notes  IRFM044 Component  IRFM044 Circuit  IRFM044 Schematic
 IRFM044 Equivalent  IRFM044 Cross Reference  IRFM044 Data Sheet  IRFM044 Fiche Technique

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