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IRFP253 MOSFET (IC) Datasheet. Cross Reference Search. IRFP253 Equivalent

Type Designator: IRFP253

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 150

Maximum Drain-Source Voltage |Vds|, V: 150

Maximum Gate-Source Voltage |Vgs|, V:

Maximum Drain Current |Id|, A: 25

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.12

Package: TO3P

IRFP253 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFP253 PDF doc:

4.1. irfp250.pdf Size:271K _st

IRFP253
IRFP253

IRFP250 N-CHANNEL 200V - 0.073? - 33A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP250 200V < 0.085? 33 A TYPICAL RDS(on) = 0.073? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 DESCRIPTION TO-247 The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced

4.2. irfp254b.pdf Size:670K _fairchild_semi

IRFP253
IRFP253

November 2001 IRFP254B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 25A, 250V, RDS(on) = 0.14? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 95 nC) planar, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast switching minim

4.3. irfp250.pdf Size:164K _international_rectifier

IRFP253
IRFP253

4.4. irfp254pbf.pdf Size:1950K _international_rectifier

IRFP253
IRFP253

PD - 95009 IRFP254PbF • Lead-Free 2/12/04 Document Number: 91214 www.vishay.com 1 IRFP254PbF Document Number: 91214 www.vishay.com 2 IRFP254PbF Document Number: 91214 www.vishay.com 3 IRFP254PbF Document Number: 91214 www.vishay.com 4 IRFP254PbF Document Number: 91214 www.vishay.com 5 IRFP254PbF Document Number: 91214 www.vishay.com 6 IRFP254PbF TO-247AC Package Outline

4.5. irfp254npbf.pdf Size:189K _international_rectifier

IRFP253
IRFP253

PD - 95041 IRFP254NPbF HEXFET Power MOSFET l Advanced Process Technology D l Dynamic dv/dt Rating VDSS = 250V l 175°C Operating Temperature l Fast Switching RDS(on) = 125m? l Fully Avalanche Rated G l Ease of Paralleling ID = 23A l Simple Drive Requirements S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach

4.6. irfp250-253.pdf Size:501K _international_rectifier

IRFP253
IRFP253



4.7. irfp254.pdf Size:162K _international_rectifier

IRFP253
IRFP253

4.8. irfp250pbf.pdf Size:1992K _international_rectifier

IRFP253
IRFP253

PD - 95008 IRFP250PbF • Lead-Free 2/11/04 Document Number: 91212 www.vishay.com 1 IRFP250PbF Document Number: 91212 www.vishay.com 2 IRFP250PbF Document Number: 91212 www.vishay.com 3 IRFP250PbF Document Number: 91212 www.vishay.com 4 IRFP250PbF Document Number: 91212 www.vishay.com 5 IRFP250PbF Document Number: 91212 www.vishay.com 6 IRFP250PbF TO-247AC Package Outline

4.9. irfp250n.pdf Size:122K _international_rectifier

IRFP253
IRFP253

PD - 94008 IRFP250N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.075? G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

4.10. irfp254n.pdf Size:222K _international_rectifier

IRFP253
IRFP253

PD - 94213 IRFP254N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 250V 175°C Operating Temperature Fast Switching RDS(on) = 125m? Fully Avalanche Rated G Ease of Paralleling ID = 23A Simple Drive Requirements S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

4.11. irfp254a.pdf Size:948K _samsung

IRFP253
IRFP253

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V Low RDS(ON) : 0.108 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

4.12. irfp250a.pdf Size:926K _samsung

IRFP253
IRFP253

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

4.13. irfp254_sihfp254.pdf Size:1519K _vishay

IRFP253
IRFP253

IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 250 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.14 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 140 COMPLIANT • Fast Switching Qgs (nC) 24 • Ease of Paralleling Qgd (nC) 71 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directi

4.14. irfp250_sihfp250.pdf Size:1453K _vishay

IRFP253
IRFP253

IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 • Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.085 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 COMPLIANT • Fast Switching Qgs (nC) 28 • Ease of Paralleling Qgd (nC) 74 • Simple Drive Requirements Configuration Single • Compliant to RoHS Direct

4.15. irfp254n_sihfp254n.pdf Size:155K _vishay

IRFP253
IRFP253

IRFP254N, SiHFP254N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 250 • Dynamic dV/dt Rating Available RDS(on) (?)VGS = 10 V 0.125 • 175 °C Operating Temperature RoHS* COMPLIANT Qg (Max.) (nC) 100 • Fully Avalanche Rated Qgs (nC) 17 • Fast Switching Qgd (nC) 44 • Ease of Paralleling • Simple Drive Requirements Configuration Single

4.16. irfp254-257.pdf Size:192K _no

IRFP253
IRFP253



See also transistors datasheet: IRFP243 , IRFP244 , IRFP244A , IRFP245 , IRFP250 , IRFP250A , IRFP251 , IRFP252 , IRF1404 , IRFP254 , IRFP254A , IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 .

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