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IRFP9132 MOSFET (IC) Datasheet. Cross Reference Search. IRFP9132 Equivalent

Type Designator: IRFP9132

Type of IRFP9132 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFP9132 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.3

Package: TO3P

IRFP9132 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFP9132 PDF doc:

3.1. irfp9130-33_irf9130-33_irf9530-33.pdf Size:520K _samsung

IRFP9132
IRFP9132



3.2. irf9130-33_irfp9130-33_irf9530-33.pdf Size:520K _samsung

IRFP9132
IRFP9132



4.1. irfp9140.pdf Size:165K _international_rectifier

IRFP9132
IRFP9132

4.2. irfp9140pbf.pdf Size:1757K _international_rectifier

IRFP9132
IRFP9132

PD-95991 IRFP9140PbF Lead-Free 12/22/04 Document Number: 91238 www.vishay.com 1 IRFP9140PbF Document Number: 91238 www.vishay.com 2 IRFP9140PbF Document Number: 91238 www.vishay.com 3 IRFP9140PbF Document Number: 91238 www.vishay.com 4 IRFP9140PbF Document Number: 91238 www.vishay.com 5 IRFP9140PbF Document Number: 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Recover

4.3. irfp9140n.pdf Size:142K _international_rectifier

IRFP9132
IRFP9132

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature P-Channel RDS(on) = 0.117? Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

4.4. irfp9140-43_irf9540-43.pdf Size:378K _samsung

IRFP9132
IRFP9132



4.5. irfp9140_sihfp9140.pdf Size:1444K _vishay

IRFP9132
IRFP9132

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of Paralleling S Lead (Pb)-

4.6. irfp9150.pdf Size:66K _intersil

IRFP9132
IRFP9132

IRFP9150 Data Sheet August 1999 File Number 2293.4 25A, 100V, 0.150 Ohm, P-Channel Power Features MOSFET • 25A, 100V This advanced power MOSFET is designed, tested, and • rDS(ON) = 0.150Ω guaranteed to withstand a specified level of energy in the • Single Pulse Avalanche Energy Rated breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power f

See also transistors datasheet: IRFP452 , IRFP453 , IRFP460 , IRFP460A , IRFP460LC , IRFP470 , IRFP9130 , IRFP9131 , IRF5210 , IRFP9133 , IRFP9140 , IRFP9140N , IRFP9141 , IRFP9142 , IRFP9143 , IRFP9150 , IRFP9230 .

Search Terms:

 IRFP9132 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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