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IRFP9133 MOSFET (IC) Datasheet. Cross Reference Search. IRFP9133 Equivalent

Type Designator: IRFP9133

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd), W: 75

Maximum Drain-Source Voltage |Vds|, V: 60

Maximum Gate-Source Voltage |Vgs|, V:

Maximum Drain Current |Id|, A: 10

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.4

Package: TO3P

IRFP9133 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFP9133 PDF doc:

3.1. irfp9130-33_irf9130-33_irf9530-33.pdf Size:520K _samsung

IRFP9133
IRFP9133



3.2. irf9130-33_irfp9130-33_irf9530-33.pdf Size:520K _samsung

IRFP9133
IRFP9133



4.1. irfp9140.pdf Size:165K _international_rectifier

IRFP9133
IRFP9133

4.2. irfp9140pbf.pdf Size:1757K _international_rectifier

IRFP9133
IRFP9133

PD-95991 IRFP9140PbF Lead-Free 12/22/04 Document Number: 91238 www.vishay.com 1 IRFP9140PbF Document Number: 91238 www.vishay.com 2 IRFP9140PbF Document Number: 91238 www.vishay.com 3 IRFP9140PbF Document Number: 91238 www.vishay.com 4 IRFP9140PbF Document Number: 91238 www.vishay.com 5 IRFP9140PbF Document Number: 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Recover

4.3. irfp9140n.pdf Size:142K _international_rectifier

IRFP9133
IRFP9133

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature P-Channel RDS(on) = 0.117? Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

4.4. irfp9140-43_irf9540-43.pdf Size:378K _samsung

IRFP9133
IRFP9133



4.5. irfp9140_sihfp9140.pdf Size:1444K _vishay

IRFP9133
IRFP9133

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of Paralleling S Lead (Pb)-

4.6. irfp9150.pdf Size:66K _intersil

IRFP9133
IRFP9133

IRFP9150 Data Sheet August 1999 File Number 2293.4 25A, 100V, 0.150 Ohm, P-Channel Power Features MOSFET • 25A, 100V This advanced power MOSFET is designed, tested, and • rDS(ON) = 0.150Ω guaranteed to withstand a specified level of energy in the • Single Pulse Avalanche Energy Rated breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power f

See also transistors datasheet: IRFP453 , IRFP460 , IRFP460A , IRFP460LC , IRFP470 , IRFP9130 , IRFP9131 , IRFP9132 , IRF460 , IRFP9140 , IRFP9140N , IRFP9141 , IRFP9142 , IRFP9143 , IRFP9150 , IRFP9230 , IRFP9231 .

Search Terms:

 IRFP9133 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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