MOSFET Datasheet



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IRFP9140
  IRFP9140
  IRFP9140
  IRFP9140
 
IRFP9140
  IRFP9140
  IRFP9140
  IRFP9140
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1501
2SK1502 ..2SK2132
2SK2133 ..2SK2719
2SK2723 ..2SK3114
2SK3115 ..2SK3564
2SK3565 ..2SK4171
2SK4177 ..3LP01M
3LP01S ..40600
40601 ..AO4480
AO4482 ..AOC2411
AOC2412 ..AON2405
AON2406 ..AON7538
AON7544 ..AOTF9N50
AOTF9N70 ..AP1332GEV-HF
AP1333GU ..AP30P10GI
AP30P10GP-HF ..AP4569GD
AP4569GH ..AP92U03GS-HF
AP93T03AGMT-HF ..AP9924AGO-HF
AP9924GO ..APT1004R2AN
APT1004R2BN ..APT5040CNR
APT50M38JFLL ..AUIRF3007
AUIRF3205 ..AUIRLR2908
AUIRLR3105 ..BLD6G22LS-50
BLF1043 ..BS870
BSB012N03LX3G ..BSR315P
BSR316P ..BUK652R0-30C
BUK652R1-30C ..BUK9120-48TC
BUK9207-30B ..BUZ42
BUZ45 ..CED11P20
CED12N10 ..CEN2301
CEN7002A ..CEU95P04
CEUF634 ..DMP2035UTS
DMP2066LDM ..FCP25N60N_F102
FCP260N60E ..FDC637BNZ
FDC638APZ ..FDI045N10A_F102
FDI150N10 ..FDMS7560S
FDMS7570S ..FDP8030L
FDP80N06 ..FDS8878
FDS8880 ..FQAF16N50
FQB10N50CFTM ..FQPF2N60C
FQPF2N70 ..FRS230D
FRS230H ..H5N1506P
H5N2001LD ..HAT2058R
HAT2061R ..HUF75329D3S
HUF75329G3 ..IPB015N04LG
IPB015N04NG ..IPD105N03LG
IPD105N04LG ..IPI70N10S3L-12
IPI70N10SL-16 ..IPP80N06S4L-05
IPP80N06S4L-07 ..IRF240
IRF250 ..IRF640FI
IRF640L ..IRF7420
IRF7421D1 ..IRF9521
IRF9522 ..IRFF420
IRFF430 ..IRFP048N
IRFP054 ..IRFR24N15D
IRFR2607Z ..IRFS730A
IRFS731 ..IRFU9212
IRFU9214 ..IRL6342
IRL6372 ..IRLU3103
IRLU3105 ..IXFH150N17T2
IXFH15N100 ..IXFK50N50
IXFK520N075T2 ..IXFP4N100PM
IXFP4N100Q ..IXFV26N60PS
IXFV30N50P ..IXTA28P065T
IXTA2N100 ..IXTH36P15P
IXTH39N08MA ..IXTP180N10T
IXTP182N055T ..IXTT10N100D
IXTT10N100D2 ..JANSR2N7401
JANSR2N7402 ..KMB4D8DN55Q
KMB5D0NP40Q ..KU2303K
KU2303Q ..MTB25P06FP
MTB2P50E ..MTN2310M3
MTN2310N3 ..MTP452M3
MTP4835AQ8 ..NTB5426N
NTB5605P ..NTP6412AN
NTP6413AN ..PHP79NQ08LT
PHP7N60E ..PSMN0R9-25YLC
PSMN102-200Y ..RF1S30N06LESM
RF1S30P05SM ..RJK03B9DPA
RJK03C0DPA ..RQJ0302NGDQA
RQJ0303PGDQA ..SDF054JAB-D
SDF054JAB-S ..SFP9610
SFP9614 ..SMG1330N
SMG2301 ..SML4080BN
SML4080CN ..SPA02N80C3
SPA03N60C3 ..SSD45N03
SSD50N06-15D ..SSM3J14T
SSM3J15CT ..SSM6N37FU
SSM6N39TU ..STB160NF3LL
STB16N65M5 ..STD2NK90Z-1
STD30NF03L ..STF2454
STF2454A ..STK4N30L
STK4N40 ..STP13N10LFI
STP13N95K3 ..STP55N05L
STP55N05LFI ..STS3429
STS3620 ..STU601S
STU6025NL ..TA75309
TA75321 ..TK75A06K3
TK75J04K3Z ..TPCA8025
TPCA8026 ..UK2996
UK3018 ..VN10KM
VN10LF ..ZXMN6A09G
ZXMN6A09K ..ZXMS6006SG
 
IRFP9140 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFP9140 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFP9140

Type of IRFP9140 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 19

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFP9140 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package: TO3P

Equivalent transistors for IRFP9140 - Cross-Reference Search

IRFP9140 PDF doc:

1.1. irfp9140.pdf Size:165K _international_rectifier

IRFP9140
IRFP9140

1.2. irfp9140pbf.pdf Size:1757K _international_rectifier

IRFP9140
IRFP9140
PD-95991 IRFP9140PbF • Lead-Free 12/22/04 Document Number: 91238 www.vishay.com 1 IRFP9140PbF Document Number: 91238 www.vishay.com 2 IRFP9140PbF Document Number: 91238 www.vishay.com 3 IRFP9140PbF Document Number: 91238 www.vishay.com 4 IRFP9140PbF Document Number: 91238 www.vishay.com 5 IRFP9140PbF Document Number: 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent

1.3. irfp9140n.pdf Size:142K _international_rectifier

IRFP9140
IRFP9140
PD - 9.1492A IRFP9140N PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175°C Operating Temperature P-Channel RDS(on) = 0.117? Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial- industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is TO-247AC similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current

1.4. irfp9140-43_irf9540-43.pdf Size:378K _samsung

IRFP9140
IRFP9140


1.5. irfp9140_sihfp9140.pdf Size:1444K _vishay

IRFP9140
IRFP9140
IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 • Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS • P-Channel COMPLIANT Qg (Max.) (nC) 61 • Isolated Central Mounting Hole Qgs (nC) 14 • 175 °C Operating Temperature Qgd (nC) 29 • Fast Switching Configuration Single • Ease of Paralleling S • Lead (Pb)-free Available TO-247 DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial S D applications where higher power levels preclude the use of D G TO-220 devices. The TO-247 is similar but superior to the P-Channel MOSFET earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specification

See also transistors datasheet: IRFP460 , IRFP460A , IRFP460LC , IRFP470 , IRFP9130 , IRFP9131 , IRFP9132 , IRFP9133 , IRFZ44A , IRFP9140N , IRFP9141 , IRFP9142 , IRFP9143 , IRFP9150 , IRFP9230 , IRFP9231 , IRFP9232 .

Keywords

 IRFP9140 Datasheet  IRFP9140 Datenblatt  IRFP9140 RoHS  IRFP9140 Distributor
 IRFP9140 Application Notes  IRFP9140 Component  IRFP9140 Circuit  IRFP9140 Schematic
 IRFP9140 Equivalent  IRFP9140 Cross Reference  IRFP9140 Data Sheet  IRFP9140 Fiche Technique

 

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