MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFP9140
  IRFP9140
  IRFP9140
 
IRFP9140
  IRFP9140
  IRFP9140
 
IRFP9140
  IRFP9140
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF16N60NT
FCPF190N60 ..FDC8884
FDC8886 ..FDMA410NZ
FDMA420NZ ..FDMS7698
FDMS7700S ..FDPF10N60NZ
FDPF10N60ZUT ..FDS9435A
FDS9926A ..FQB5N90
FQB6N40C ..FQPF85N06
FQPF8N60C ..FRS9240R
FRX130D1 ..H5N2801P
H5N2802PF ..HAT2131R
HAT2132H ..HUF75345P3
HUF75345S3S ..IPB048N06LG
IPB049N06L3G ..IPD30N06S2-15
IPD30N06S2-23 ..IPI90R340C3
IPI90R500C3 ..IPU075N03LG
IPU090N03LG ..IRF3205ZS
IRF330 ..IRF6619
IRF6620 ..IRF7493
IRF7494 ..IRF9632
IRF9633 ..IRFH5255
IRFH5300 ..IRFP231
IRFP232 ..IRFR420
IRFR420A ..IRFS9141
IRFS9142 ..IRFWZ24A
IRFWZ34A ..IRLH5030
IRLH5034 ..IRLW630A
IRLW640A ..IXFH230N075T2
IXFH230N10T ..IXFK94N50P2
IXFK98N50P3 ..IXFR180N06
IXFR180N07 ..IXFX180N10
IXFX180N15P ..IXTA52P10P
IXTA56N15T ..IXTH5N100
IXTH5N100A ..IXTP26P20P
IXTP28P065T ..IXTT440N055T2
IXTT48P20P ..KF2N60P
KF3N40D ..KP101G
KP103E ..MCH3914
MCH5908 ..MTB6D0N03ATV8
MTB80N08J3 ..MTN3410F3
MTN3410J3 ..NDB4060
NDB4060L ..NTD4858N
NTD4860N ..NTZD3152P
NTZD3154N ..PMBF4391
PMBF4392 ..PSMN3R0-60ES
PSMN3R0-60PS ..RFD15P06SM
RFD16N03L ..RJK0658DPA
RJK0659DPA ..RRH100P03
RRH140P03 ..SDF130JAA-S
SDF130JAA-U ..SFS9Z34
SFT1341 ..SMG2358N
SMG2359P ..SML50A15
SML50A19 ..SPB11N60S5
SPB12N50C3 ..SSF8N80A
SSF8N90A ..SSM3K04FU
SSM3K04FV ..SSP4N55
SSP4N60 ..STB40NS15
STB416D ..STD4NK80Z-1
STD4NS25 ..STF8209
STF8209A ..STL75N3LLZH5
STL75N8LF6 ..STP19NM50N
STP200N4F3 ..STP60NF06FP
STP60NF06L ..STT02N10
STT02N20 ..STV4N100
STV4NA60 ..TK12A45D
TK12A50D ..TPC6108
TPC6109-H ..TPCA8A01-H
TPCA8A02-H ..UT3404
UT3406 ..ZVN0545A
ZVN0545G ..ZXMS6004DT8
ZXMS6004FF ..ZXMS6006SG
 
IRFP9140 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFP9140 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFP9140

Type of IRFP9140 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 19

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFP9140 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package: TO3P

Equivalent transistors for IRFP9140

IRFP9140 PDF doc:

1.1. irfp9140.pdf Size:165K _international_rectifier

IRFP9140
IRFP9140

1.2. irfp9140pbf.pdf Size:1757K _international_rectifier

IRFP9140
IRFP9140
PD-95991 IRFP9140PbF • Lead-Free 12/22/04 Document Number: 91238 www.vishay.com 1 IRFP9140PbF Document Number: 91238 www.vishay.com 2 IRFP9140PbF Document Number: 91238 www.vishay.com 3 IRFP9140PbF Document Number: 91238 www.vishay.com 4 IRFP9140PbF Document Number: 91238 www.vishay.com 5 IRFP9140PbF Document Number: 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent

1.3. irfp9140n.pdf Size:142K _international_rectifier

IRFP9140
IRFP9140
PD - 9.1492A IRFP9140N PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175°C Operating Temperature P-Channel RDS(on) = 0.117? Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial- industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is TO-247AC similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current

1.4. irfp9140-43_irf9540-43.pdf Size:378K _samsung

IRFP9140
IRFP9140


1.5. irfp9140_sihfp9140.pdf Size:1444K _vishay

IRFP9140
IRFP9140
IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 • Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS • P-Channel COMPLIANT Qg (Max.) (nC) 61 • Isolated Central Mounting Hole Qgs (nC) 14 • 175 °C Operating Temperature Qgd (nC) 29 • Fast Switching Configuration Single • Ease of Paralleling S • Lead (Pb)-free Available TO-247 DESCRIPTION Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial S D applications where higher power levels preclude the use of D G TO-220 devices. The TO-247 is similar but superior to the P-Channel MOSFET earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specification

See also transistors datasheet: IRFP460 , IRFP460A , IRFP460LC , IRFP470 , IRFP9130 , IRFP9131 , IRFP9132 , IRFP9133 , IRFZ44A , IRFP9140N , IRFP9141 , IRFP9142 , IRFP9143 , IRFP9150 , IRFP9230 , IRFP9231 , IRFP9232 .

Keywords

 IRFP9140 Datasheet  IRFP9140 Datenblatt  IRFP9140 RoHS  IRFP9140 Distributor
 IRFP9140 Application Notes  IRFP9140 Component  IRFP9140 Circuit  IRFP9140 Schematic
 IRFP9140 Equivalent  IRFP9140 Cross Reference  IRFP9140 Data Sheet  IRFP9140 Fiche Technique

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