IRFR214A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFR214A

Type of IRFR214A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 25

Maximum drain-source voltage |Uds|, V: 250V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 2.2

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFR214A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 180

Maximum drain-source on-state resistance (Rds), Ohm: 2

Package: DPAK

Equivalent transistors for IRFR214A

IRFR214A PDF documents for downloads:

1.1. irfr214a.pdf Size:510K _samsung

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V Lower RDS(ON) : 1.393 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 o Continuous Drain Current (TC=25 C ) 2.2 ID A o Continuous Drain Current (TC=100 C ) 1.4 1 IDM Drain Current-Pulsed 8.5 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 61 mJ O IAR Avalanche Current 1 2.2 A O EAR Repetitive Avalanche Energy 1 2.5 mJ O dv/dt Peak Diode Recovery dv/dt 3 4.8 V/ns O Total Power Dissipation (TA=25 oC)* 2.5 W PD Total Power Dissipation (TC=25 oC) 25 W o Linear Derating Factor C 0.20 W/ Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Ran

3.1. irfr214b_irfu214b.pdf Size:715K _fairchild_semi

November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.2A, 250V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 8.1 nC) planar, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? D-PAK I-PAK G S IRFR Series IRFU Series G D S S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRFR214B / IRFU214B Uni

3.2. irfr214.pdf Size:169K _international_rectifier

3.3. irfr214pbf_irfu214pbf.pdf Size:1415K _international_rectifier

PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free 12/3/04 Document Number: 91269 www.vishay.com 1 IRFR/U214PbF Document Number: 91269 www.vishay.com 2 IRFR/U214PbF Document Number: 91269 www.vishay.com 3 IRFR/U214PbF Document Number: 91269 www.vishay.com 4 IRFR/U214PbF Document Number: 91269 www.vishay.com 5 IRFR/U214PbF Document Number: 91269 www.vishay.com 6 IRFR/U214PbF Document Number: 91269 www.vishay.com 7 IRFR/U214PbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 PART NUMBER WIT H AS SEMBLY INT ERNAT IONAL LOT CODE 1234 DAT E CODE RECT IFIER IRFU120 ASS EMBLED ON WW 16, 1999 LOGO YEAR 9 = 1999 916A IN T HE AS SEMBLY LINE "A" 12 34 WEEK 16 LINE A Note: "P" in as sembly line pos ition ASS EMBLY indicates "Lead-Free" LOT CODE OR PART NUMBER INTERNAT IONAL DAT E CODE RECTIFIER IRFU120 P = DES IGNAT ES LEAD-FREE LOGO PRODUCT (OPTIONAL) 12 34 YEAR 9 = 1999 AS SEMBLY WEEK 1

3.4. irfr214_irfu214_sihfr214_sihfu214.pdf Size:2021K _vishay

IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 250 Definition • Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 2.0 • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210, SiHFR9210) Qgs (nC) 1.8 • Straight Lead (IRFU9210, SiHFU9210) Qgd (nC) 4.5 • Available in Tape and Reel Configuration Single • Fast Switching • Ease of Paralleling D • Compliant to RoHS Directive 2002/95/EC DESCRIPTION DPAK IPAK (TO-252) (TO-251) Third generation Power MOSFETs from Vishay provide the D designer with the best combination of fast switching, D G ruggedized device design, low on-resistance and cost-effectiveness. S The D-PAK is designed for surface mounting using vapor G S D G phase, infrared, or wave soldering techniques. The straight S lead version (IRFU, SiHFU series) is for through-hole N-Channel MOSFET mounting applications. Power dissipation levels

See also transistors datasheet: IRFR120N , IRFR121 , IRFR130A , IRFR1N60A , IRFR210 , IRFR210A , IRFR212 , IRFR214 , RFP50N06 , IRFR220 , IRFR220A , IRFR222 , IRFR224 , IRFR224A , IRFR230A , IRFR310 , IRFR310A .

Keywords