IRFS350 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFS350

Type of IRFS350 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 70

Maximum drain-source voltage |Uds|, V: 400V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10.4

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFS350 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO3P

Equivalent transistors for IRFS350

IRFS350 PDF documents for downloads:

5.1. irfs38n20d.pdf Size:133K _international_rectifier

PD - 94358 IRFB38N20D IRFS38N20D SMPS MOSFET IRFSL38N20D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.054? 44A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRFB38N20D IRFS38N20D IRFSL38N20D Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 44 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 32 A IDM Pulsed Drain Current 180 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 320 Linear Derating Factor 2.1 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 9.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 s

5.2. irfs30n20d.pdf Size:138K _international_rectifier

PD- 93832 IRFB30N20D IRFS30N20D SMPS MOSFET IRFL30N20D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.082? 30A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche Voltage IRFB30N20D IRFS30N20D IRFL30N20D and Current Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A IDM Pulsed Drain Current 120 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 200 Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 2.1 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 l

5.3. irfs33n15d.pdf Size:139K _international_rectifier

PD- 93903 IRFB33N15D IRFS33N15D SMPS MOSFET IRFSL33N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.056? 33A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRFB33N15D IRFS33N15D IRFSL33N15D Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24 A IDM Pulsed Drain Current 130 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 170 Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 4.4 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw

5.4. irfs31n20d.pdf Size:190K _international_rectifier

PD- 93805B IRFB31N20D IRFS31N20D SMPS MOSFET IRFSL31N20D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.082? 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche Voltage IRFB31N20D IRFS31N20D IRFSL31N20D and Current Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A IDM Pulsed Drain Current 124 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 200 Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 2.1 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 1

See also transistors datasheet: IRFS331 , IRFS332 , IRFS333 , IRFS340 , IRFS340A , IRFS341 , IRFS342 , IRFS343 , BS170 , IRFS350A , IRFS351 , IRFS352 , IRFS353 , IRFS430 , IRFS431 , IRFS432 , IRFS433 .

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