2SJ135 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ135

Type of 2SJ135 transistor: FET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SJ135 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.5

Package: MP45

Equivalent transistors for 2SJ135

2SJ135 PDF documents for downloads:

1.1. 2sj135.pdf Size:159K _nec

5.1. 2sj130.pdf Size:86K _renesas

2SJ130(L), 2SJ130(S) Silicon P Channel MOS FET REJ03G0846-0200 (Previous: ADE-208-1181) Rev.2.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(1) ) (Package name: DPAK (S) ) 4 4 D 1. Gate 1 2 2. Drain G 3 3. Source 4. Drain 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 7 2SJ130(L), 2SJ130(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage V –300 V DSS Gate to source voltage V ±20 V GSS Drain current I –1 A D Drain peak current I –2 A D (pulse) Body to drain diode reverse drain current I –1 A DR Channel dissipation Pch Note 1 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C N

5.2. 2sj132.pdf Size:132K _nec

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • Gate drive available at logic level (VGS = -4 V) • High current control available in small dimension due to low RDS(on) (? 0.25 ?) • 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to Electrode connection know the specification of quality grade on the <1> Gate devices and its recommended applications. <2> Drain <3> Source <4> Fin (drain) ABSOLUTE MAXIMUM RATINGS (Ta = 25° °C) ° ° INTERNAL Parameter Symbol Conditions Ratings Unit EQUIVALENT CIRCUIT Drain to source voltage VDSS VGS = 0 -30 V –20 V Gate to source voltage VGSS VDS = 0 + –2.0 A Drain current (DC) ID(DC) TC = 25°C + –8.0 A Drain current (pulse) ID(pulse) PW ? 300 µs + duty cycle ? 10 %

5.3. 2sj134.pdf Size:96K _nec

5.4. 2sj138.pdf Size:154K _nec

5.5. 2sj133.pdf Size:130K _nec

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • Gate drive available at logic level (VGS = –4 V) • High current control available in small dimension due to low RDS(on) (? 0.45 ?) • 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to Electrode connection know the specification of quality grade on the <1> Gate (G) devices and its recommended applications. <2> Drain (D) <3> Source (S) <4> Fin (drain) ABSOLUTE MAXIMUM RATINGS (Ta = 25° °C) ° ° INTERNAL Parameter Symbol Conditions Ratings Unit EQUIVALENT CIRCUIT Drain to source voltage VDSS VGS = 0 -60 V –20 V Gate to source voltage VGSS VDS = 0 + –2.0 A Drain current (DC) ID(DC) TC = 25°C + –8.0 A Drain current (pulse) ID(pulse) PW ? 300 µs + duty cycle

5.6. 2sj139.pdf Size:97K _no

5.7. 2sj136.pdf Size:91K _no

5.8. 2sj137.pdf Size:100K _no

See also transistors datasheet: 2N7272R4 , 2N7275D , 2N7275H , 2N7275R , 2SJ128 , 2SJ132 , 2SJ133 , 2SJ134 , 2N7000 , 2SJ136 , 2SJ137 , 2SJ138 , 2SJ139 , 2SJ140 , 2SJ141 , 2SJ142 , 2SJ143 .

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