IRFS510A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFS510A

Type of IRFS510A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 21

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFS510A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 190

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO220F

Equivalent transistors for IRFS510A

IRFS510A PDF documents for downloads:

5.1. irfs52n15d.pdf Size:134K _international_rectifier

PD - 94357 IRFB52N15D IRFS52N15D SMPS MOSFET IRFSL52N15D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.032? 60A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRFB52N15D IRFS52N15D IRFSL52N15D Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 60 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 43 A IDM Pulsed Drain Current 240 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 320 Linear Derating Factor 2.1 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 s

5.2. irfs59n10d.pdf Size:138K _international_rectifier

PD - 93890 IRFB59N10D IRFS59N10D SMPS MOSFET IRFSL59N10D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.025? 59A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche Voltage IRFB59N10D IRFS59N10D IRFSL59N10D and Current Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 42 A IDM Pulsed Drain Current 236 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 200 Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 3.3 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 scr

5.3. irfs550a.pdf Size:510K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 21 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 21 ID A ? Continuous Drain Current (TC=100 ) 14.8 1 IDM Drain Current-Pulsed A 160 O VGS Gate-to-Source Voltage V _ EAS Single Pulsed Avalanche Energy 2 mJ 588 O IAR Avalanche Current 1 21 A O EAR Repetitive Avalanche Energy 1 4.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 O ? Total Power Dissipation (TC=25 ) 46 W PD ? Linear Derating Factor W/ 0.31 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead Temp.

5.4. irfs530a.pdf Size:509K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10.7 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 10.7 ID A ? Continuous Drain Current (TC=100 ) 7.6 1 IDM Drain Current-Pulsed A 56 O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 229 O IAR Avalanche Current 1 10.7 A O EAR Repetitive Avalanche Energy 1 3.2 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 O ? Total Power Dissipation (TC=25 ) 32 W PD ? Linear Derating Factor W/ 0.21 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead

5.5. irfs520a.pdf Size:504K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.2 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 7.2 ID A ? Continuous Drain Current (TC=100 ) 5.1 1 IDM Drain Current-Pulsed A O 37 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ O 104 1 IAR Avalanche Current 7.2 A O 1 EAR Repetitive Avalanche Energy O 2.8 mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns O 6.5 ? Total Power Dissipation (TC=25 ) 28 W PD ? Linear Derating Factor W/ 0.19 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead Temp. f

5.6. irfs540a.pdf Size:507K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.052 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 17 ID A ? Continuous Drain Current (TC=100 ) 12 1 IDM Drain Current-Pulsed A 110 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 385 O IAR Avalanche Current 1 17 A O EAR Repetitive Avalanche Energy 1 3.9 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 O ? Total Power Dissipation (TC=25 ) 39 W PD ? Linear Derating Factor W/ 0.26 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ? Maximum Lead Temp. for

See also transistors datasheet: IRFS441 , IRFS442 , IRFS443 , IRFS450 , IRFS450A , IRFS451 , IRFS452 , IRFS453 , RFP50N06 , IRFS520 , IRFS520A , IRFS521 , IRFS522 , IRFS523 , IRFS530 , IRFS530A , IRFS531 .

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