All MOSFET. IRFS642 Datasheet

 

IRFS642 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFS642

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.22 Ohm

Package: TO220

IRFS642 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFS642 PDF doc:

4.1. irf640b_irfs640b.pdf Size:916K _fairchild_semi

IRFS642
IRFS642

November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 200V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switchin

4.2. irf644b_irfs644b.pdf Size:900K _fairchild_semi

IRFS642
IRFS642

November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 14A, 250V, RDS(on) = 0.28? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 47 nC) planar, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored to • Fast switchin

4.3. irfs644a.pdf Size:504K _samsung

IRFS642
IRFS642

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

4.4. irfs640a.pdf Size:508K _samsung

IRFS642
IRFS642

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 ? (Typ. ) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

Datasheet: IRFS630 , IRFS630A , IRFS632 , IRFS634 , IRFS634A , IRFS635 , IRFS640 , IRFS640A , IRF1010E , IRFS644 , IRFS644A , IRFS645 , IRFS650A , IRFS654A , IRFS710A , IRFS720 , IRFS720A .

 


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IRFS642
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