All MOSFET Datasheet

 

IRFS642 MOSFET (IC) Datasheet. Cross Reference Search. IRFS642 Equivalent

Type Designator: IRFS642

Type of IRFS642 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 40

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 16

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFS642 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.22

Package: TO220

IRFS642 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFS642 PDF doc:

4.1. irf640b_irfs640b.pdf Size:916K _fairchild_semi

IRFS642
IRFS642

November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 200V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switchin

4.2. irf644b_irfs644b.pdf Size:900K _fairchild_semi

IRFS642
IRFS642

November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 14A, 250V, RDS(on) = 0.28? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 47 nC) planar, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored to • Fast switchin

4.3. irfs644a.pdf Size:504K _samsung

IRFS642
IRFS642

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

4.4. irfs640a.pdf Size:508K _samsung

IRFS642
IRFS642

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.8 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 ? (Typ. ) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

See also transistors datasheet: IRFS630 , IRFS630A , IRFS632 , IRFS634 , IRFS634A , IRFS635 , IRFS640 , IRFS640A , IRF1010E , IRFS644 , IRFS644A , IRFS645 , IRFS650A , IRFS654A , IRFS710A , IRFS720 , IRFS720A .

Search Terms:

 IRFS642 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IRFS642
  IRFS642
  IRFS642
  IRFS642
 
IRFS642
  IRFS642
  IRFS642
  IRFS642
 

social 

LIST

Last Update

MOSFET: RFP2N18L | RFL1P10 | RFL1P08 | RFL2N06L | RFL2N06 | RFL2N05L | RFL2N05 | RFL1N20L | RFL1N20 | RFL1N18L | RFL1N18 | RFL1N10 | RFL1N08 | SM7308CSKP | SM6043CSQ |

Enter a full or partial SMD code with a minimum of 2 letters or numbers