IRFS9533 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFS9533

Type of IRFS9533 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFS9533 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220

Equivalent transistors for IRFS9533

IRFS9533 PDF documents for downloads:

5.1. irfs9n60a.pdf Size:270K _international_rectifier

PD - 95538 SMPS MOSFET IRFS9N60APbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75? 9.2A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness G D S l Fully Characterized Capacitance and D2Pak Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.2 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.8 A IDM Pulsed Drain Current 37 PD @TC = 25°C Power Dissipation 170 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ? 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Applicable Off Line SMPS Topologies: l Active Clamped Forward l Main Switch Note

See also transistors datasheet: IRFS9243 , IRFS9520 , IRFS9521 , IRFS9522 , IRFS9523 , IRFS9530 , IRFS9531 , IRFS9532 , IRF830 , IRFS9540 , IRFS9541 , IRFS9542 , IRFS9543 , IRFS9620 , IRFS9621 , IRFS9622 , IRFS9623 .

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