IRFSZ25 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFSZ25

Type of IRFSZ25 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 14

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFSZ25 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220

Equivalent transistors for IRFSZ25

IRFSZ25 PDF documents for downloads:

4.1. irfsz24a.pdf Size:1006K _samsung

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.050 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 ) 14 ID A Continuous Drain Current (TC=100 ) 9.9 IDM Drain Current-Pulsed A 68 VGS Gate-to-Source Voltage V 20 EAS Single Pulsed Avalanche Energy mJ 168 IAR Avalanche Current A 14 EAR Repetitive Avalanche Energy mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns 5.5 Total Power Dissipation (TC=25 ) W 30 PD Linear Derating Factor W/ 0.2 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from case fo

5.1. irfsz34a.pdf Size:498K _samsung

Advanced Power MOSFET FEATURES BVDSS = 60V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V Continuous Drain Current (TC=25 ) 20 ID A Continuous Drain Current (TC=100 ) 14.1 IDM Drain Current-Pulsed 120 A VGS Gate-to-Source Voltage 20 V EAS Single Pulsed Avalanche Energy 343 mJ IAR Avalanche Current 20 A EAR Repetitive Avalanche Energy 3.4 mJ dv/dt Peak Diode Recovery dv/dt 5.5 V/ns Total Power Dissipation (TC=25 ) 34 W PD Linear Derating Factor 0.23 W/ Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from case for 5-seconds Thermal

5.2. irfsz44a.pdf Size:1018K _samsung

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 ) 30 ID A Continuous Drain Current (TC=100 ) 21.2 IDM Drain Current-Pulsed A 200 VGS Gate-to-Source Voltage V 20 EAS Single Pulsed Avalanche Energy mJ 771 IAR Avalanche Current A 30 EAR Repetitive Avalanche Energy mJ 4.5 dv/dt Peak Diode Recovery dv/dt V/ns 5.5 Total Power Dissipation (TC=25 ) W 45 PD Linear Derating Factor W/ 0.3 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from ca

See also transistors datasheet: IRFS9N60A , IRFSL11N50A , IRFSL9N60A , IRFSZ14A , IRFSZ20 , IRFSZ22 , IRFSZ24 , IRFSZ24A , 2N3824 , IRFSZ30 , IRFSZ32 , IRFSZ34 , IRFSZ34A , IRFSZ35 , IRFSZ40 , IRFSZ42 , IRFSZ44 .

Keywords