IRFU010 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFU010

Type of IRFU010 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 25

Maximum drain-source voltage |Uds|, V: 50V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 8.2

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFU010 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: IPAK

Equivalent transistors for IRFU010

IRFU010 PDF documents for downloads:

4.1. irfr014pbf_irfu014pbf.pdf Size:1318K _international_rectifier

PD-95065A IRFR014PbF IRFU014PbF • Lead-Free 12/10/04 Document Number: 91263 www.vishay.com 1 IRFR/U014PbF Document Number: 91263 www.vishay.com 2 IRFR/U014PbF Document Number: 91263 www.vishay.com 3 IRFR/U014PbF Document Number: 91263 www.vishay.com 4 IRFR/U014PbF Document Number: 91263 www.vishay.com 5 IRFR/U014PbF Document Number: 91263 www.vishay.com 6 IRFR/U014PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop

5.1. irfr024pbf_irfu024pbf.pdf Size:1456K _international_rectifier

PD- 95236A IRFR024PbF IRFU024PbF • Lead-Free Absolute Maximum Ratings 12/03/04 Document Number: 91264 www.vishay.com 1 IRFR/U024PbF Document Number: 91264 www.vishay.com 2 IRFR/U024PbF Document Number: 91264 www.vishay.com 3 IRFR/U024PbF Document Number: 91264 www.vishay.com 4 IRFR/U024PbF Document Number: 91264 www.vishay.com 5 IRFR/U024PbF Document Number: 91264 www.vishay.com 6 IRFR/U024PbF Document Number: 91264 www.vishay.com 7 IRFR/U024PbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 PART NUMBER WITH AS SEMBLY INTERNATIONAL LOT CODE 1234 DATE CODE RECTIFIER IRFU120 ASSEMBLED ON WW 16, 1999 YEAR 9 = 1999 LOGO 916A IN THE ASSEMBLY LINE "A" 12 34 WEEK 16 LINE A Note: "P" in assembly line position ASS EMBLY indicates "Lead-Free" LOT CODE OR PART NUMBER INTERNATIONAL DATE CODE RECTIFIER IRFU120 P = DES IGNAT ES LEAD-FREE LOGO PRODUCT (OPTIONAL) 12 34 YEAR 9 = 1999 A

5.2. irfr024_irfu024_sihfr024_sihfu024.pdf Size:1159K _vishay

IRFR024, IRFU024, SiHFR024, SiHFU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition • Dynamic dV/dt Rating RDS(on) (?)VGS = 10 V 0.10 • Surface Mount (IRFR024, SiHFR024) Qg (Max.) (nC) 25 • Straight Lead (IRFU024, SiHFU024) Qgs (nC) 5.8 • Available in Tape and Reel • Fast Switching Qgd (nC) 11 • Ease of Paralleling Configuration Single • Simple Drive Requirements D • Compliant to RoHS Directive 2002/95/EC DPAK IPAK DESCRIPTION (TO-252) (TO-251) Third generation Power MOSFETs from Vishay provide the D designer with the best combination of fast switching, D G ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor S G S phase, infrared, or wave soldering techniques. The straight D G S lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W N-Channel MOSFET

5.3. irfr020_irfu020_sihfr020_sihfu020.pdf Size:1051K _vishay

IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) (?)VGS = 10 V 0.10 • Dynamic dV/dt Rating Qg (Max.) (nC) 25 • Surface Mount (IRFR020, SiHFR020) Qgs (nC) 5.8 • Available in Tape and Reel • Fast Switching Qgd (nC) 11 • Ease of Paralleling Configuration Single • Simple Drive Requirements D • Compliant to RoHS Directive 2002/95/EC DPAK IPAK (TO-252) (TO-251) DESCRIPTION D D Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and S G S D cost-effectiveness. G The DPAK is designed for surface mounting using vapor S phase, infrared, or wave soldering techniques. N-Channel MOSFET ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR020-GE3 SiHFR020TR-GE3 SiHFU020-GE3 IRFR020PbF IRF

See also transistors datasheet: IRFSZ34 , IRFSZ34A , IRFSZ35 , IRFSZ40 , IRFSZ42 , IRFSZ44 , IRFSZ44A , IRFSZ45 , 3SK40 , IRFU012 , IRFU014 , IRFU014A , IRFU015 , IRFU020 , IRFU022 , IRFU024A , IRFU024N .

Keywords