IRFW540A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFW540A

Type of IRFW540A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 107

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 28

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFW540A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1320

Maximum drain-source on-state resistance (Rds), Ohm: 0.052

Package: TO263

Equivalent transistors for IRFW540A

IRFW540A PDF documents for downloads:

1.1. irfw540a.pdf Size:508K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.052 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature 2 Lower Leakage Current : 10 µA (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.041 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 28 ID A ? Continuous Drain Current (TC=100 ) 19.8 1 IDM Drain Current-Pulsed 110 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 523 mJ O 1 IAR Avalanche Current 28 A O 1 EAR Repetitive Avalanche Energy 10.7 mJ O dv/dt Peak Diode Recovery dv/dt 3 6.5 V/ns O ? * Total Power Dissipation (TA=25 ) 3.8 W ? PD Total Power Dissipation (TC=25 ) 107 W ? Linear Derating Factor 0.71 W/ Operating Junction and TJ , TSTG - 55 t

5.1. irfw550a_irfi550a.pdf Size:266K _fairchild_semi

IRFW/I550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK ? 175 C Operating Temperature 2 µA (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.032 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 100 V ? Continuous Drain Current (TC=25 C) 40 ID A ? Continuous Drain Current (TC=100 C) 28.3 1 IDM Drain Current-Pulsed O 160 A + VGS Gate-to-Source Voltage _ 0 V 2 EAS Single Pulsed Avalanche Energy 640 mJ O IAR Avalanche Current 1 40 A O EAR Repetitive Avalanche Energy 1 16.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt O 6.5 V/ns ? * Total Power Dissipation (TA=25 ) 3.8 W C ? PD Total Power Dissipation (TC=25 C) 167 W ? Linear Derating Factor 1.11 W/ C Operat

5.2. irfw530a.pdf Size:508K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature 2 µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 14 ID A ? Continuous Drain Current (TC=100 ) 9.9 1 IDM Drain Current-Pulsed 56 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 261 mJ O 1 IAR Avalanche Current 14 A O 1 EAR Repetitive Avalanche Energy 5.5 mJ O dv/dt Peak Diode Recovery dv/dt 3 6.5 V/ns O ? * Total Power Dissipation (TA=25 ) 3.8 W ? PD Total Power Dissipation (TC=25 ) 55 W ? Linear Derating Factor 0.36 W/ Operating Junction and TJ , TSTG - 55 t

5.3. irfw550a.pdf Size:513K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature 2 Lower Leakage Current : 10 µA (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.032 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 40 ID A ? Continuous Drain Current (TC=100 ) 28.3 1 IDM Drain Current-Pulsed 160 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 640 mJ O 1 IAR Avalanche Current 40 A O 1 EAR Repetitive Avalanche Energy 16.7 mJ O dv/dt Peak Diode Recovery dv/dt 3 6.5 V/ns O ? * Total Power Dissipation (TA=25 ) 3.8 W ? PD Total Power Dissipation (TC=25 ) 167 W ? Linear Derating Factor 1.11 W/ Operating Junction and TJ , TSTG - 55 to +17

5.4. irfw520a.pdf Size:503K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature 2 Lower Leakage Current : 10 µA (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 9.2 ID A ? Continuous Drain Current (TC=100 ) 6.5 1 IDM Drain Current-Pulsed 37 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 113 mJ O 1 IAR Avalanche Current 9.2 A O 1 EAR Repetitive Avalanche Energy 4.5 mJ O dv/dt Peak Diode Recovery dv/dt 3 6.5 V/ns O ? * Total Power Dissipation (TA=25 ) 3.8 W ? PD Total Power Dissipation (TC=25 ) 45 W ? Linear Derating Factor 0.3 W/ Operating Junction and TJ , TSTG - 55 to +

See also transistors datasheet: IRFU9220 , IRFU9222 , IRFU9310 , IRFUC20 , IRFW450 , IRFW510A , IRFW520A , IRFW530A , IRF2807 , IRFW550A , IRFW610A , IRFW614A , IRFW620A , IRFW624A , IRFW630A , IRFW634A , IRFW640A .

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