IRFW630A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFW630A

Type of IRFW630A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 72

Maximum drain-source voltage |Uds|, V: 200V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 9

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFW630A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 500

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO263

Equivalent transistors for IRFW630A

IRFW630A PDF documents for downloads:

1.1. irfw630a.pdf Size:509K _samsung

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) : 0.333 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C ) 9 ID A Continuous Drain Current (TC=100 o ) C 5.7 IDM Drain Current-Pulsed 36 A 1 O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 162 mJ O IAR Avalanche Current 9 A 1 O EAR Repetitive Avalanche Energy 1 7.2 mJ O 3 dv/dt Peak Diode Recovery dv/dt 5.0 V/ns O Total Power Dissipation (TA=25 oC )* 3.1 W PD Total Power Dissipation (TC=25 o ) C 72 W o Linear Derating Factor 0.57 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o

3.1. irfw630b_irfi630b.pdf Size:712K _fairchild_semi

IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9.0A, 200V, RDS(on) = 0.4? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 22 nC) planar, DMOS technology. • Low Crss ( typical 22 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? G S D2-PAK I2-PAK G D S IRFW Series IRFI Series S Absolute Maximum Ratings TC = 25°C unless otherwis

5.1. irfw610a.pdf Size:505K _samsung

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) : 1.169 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C ) 3.3 ID A Continuous Drain Current (TC=100 o ) C 2.1 IDM Drain Current-Pulsed 10 A 1 O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 44 mJ O IAR Avalanche Current 3.3 A 1 O EAR Repetitive Avalanche Energy 1 3.8 mJ O 3 dv/dt Peak Diode Recovery dv/dt 5.0 V/ns O Total Power Dissipation (TA=25 oC )* 3.1 W PD Total Power Dissipation (TC=25 o ) C 38 W o Linear Derating Factor C 0.31 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range

5.2. irfw644a.pdf Size:506K _samsung

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V 2 Lower RDS(ON) : 0.214 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 o Continuous Drain Current (TC=25 C) 14 ID o A C) Continuous Drain Current (TC=100 8.9 IDM Drain Current-Pulsed 56 A 1 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 490 mJ O IAR Avalanche Current 14 A 1 O EAR Repetitive Avalanche Energy 1 13.9 mJ O 3 dv/dt Peak Diode Recovery dv/dt 4.8 V/ns O Total Power Dissipation (TA=25 oC )* 3.1 W PD Total Power Dissipation (TC=25 o ) C 139 W o Linear Derating Factor C 1.11 W/ Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range

5.3. irfw624a.pdf Size:514K _samsung

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V 2 Low RDS(ON) : 0.742 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 o Continuous Drain Current (TC=25 C) 4.1 ID A Continuous Drain Current (TC=100 o ) C 2.6 IDM Drain Current-Pulsed 16 A 1 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 84 mJ O IAR Avalanche Current 4.1 A 1 O EAR Repetitive Avalanche Energy 1 4.9 mJ O 3 dv/dt Peak Diode Recovery dv/dt 4.8 V/ns O Total Power Dissipation (TA=25 oC)* 3.1 W PD Total Power Dissipation (TC=25 o ) C 49 W o Linear Derating Factor C 0.39 W/ Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o

5.4. irfw640a.pdf Size:512K _samsung

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V 2 Lower RDS(ON) : 0.144 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o C Continuous Drain Current (TC=25 ) 18 ID A Continuous Drain Current (TC=100 o ) C 11.4 IDM Drain Current-Pulsed 1 7.2 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 216 mJ O IAR Avalanche Current 1 18 A O EAR Repetitive Avalanche Energy 1 13.9 mJ O dv/dt Peak Diode Recovery dv/dt 3 5.0 V/ns O o * Total Power Dissipation (TA=25 ) C 3.1 W PD Total Power Dissipation (TC=25 o ) C 139 W o Linear Derating Factor 1.11 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temp

5.5. irfw614a.pdf Size:513K _samsung

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V 2 Lower RDS(ON) : 1.393 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 o Continuous Drain Current (TC=25 C ) 2.8 ID A o Continuous Drain Current (TC=100 C ) 1.8 1 IDM Drain Current-Pulsed 8.5 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 49 mJ O IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 1 4 mJ O dv/dt Peak Diode Recovery dv/dt 3 4.8 V/ns O Total Power Dissipation (TA=25 oC)* 3.1 W o PD Total Power Dissipation (TC=25 C ) 40 W o Linear Derating Factor C 0.32 W/ Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Rang

See also transistors datasheet: IRFW520A , IRFW530A , IRFW540A , IRFW550A , IRFW610A , IRFW614A , IRFW620A , IRFW624A , BF245A , IRFW634A , IRFW640A , IRFW644A , IRFW710A , IRFW720A , IRFW730A , IRFW740A , IRFW820A .

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