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IRFZ25 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: TO220

IRFZ25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ25 PDF doc:

5.1. irfz24n_1.pdf Size:53K _philips

IRFZ25
IRFZ25

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 17 A features very low on-state re

5.2. irfz20-22-fi.pdf Size:489K _st2

IRFZ25
IRFZ25

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5.3. irfz24vs.pdf Size:123K _international_rectifier

IRFZ25
IRFZ25

PD - 94182 IRFZ24VS IRFZ24VL HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 60m? Fast Switching G Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

5.4. irfz1x_irfz2x_irfz3x_irfz4x.pdf Size:43K _international_rectifier

IRFZ25

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5.5. irfz24ns.pdf Size:159K _international_rectifier

IRFZ25
IRFZ25

PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature RDS(on) = 0.07? Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res

5.6. irfz24n_1.pdf Size:53K _international_rectifier

IRFZ25
IRFZ25

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 17 A features very low on-state re

5.7. irfz24n.pdf Size:123K _international_rectifier

IRFZ25
IRFZ25

PD - 91354A IRFZ24N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 17A S Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area

5.8. irfz24v.pdf Size:200K _international_rectifier

IRFZ25
IRFZ25

PD - 94156 IRFZ24V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 60m? G Fast Switching Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

5.9. irfz24s-l.pdf Size:193K _international_rectifier

IRFZ25
IRFZ25

PD - 9.891A IRFZ24S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175°C Operating Temperature RDS(on) = 0.10? Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

5.10. irfz24.pdf Size:166K _international_rectifier

IRFZ25
IRFZ25

5.11. irfz24s.pdf Size:359K _international_rectifier

IRFZ25
IRFZ25

PD - 9.891A IRFZ24S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175°C Operating Temperature RDS(on) = 0.10? Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

5.12. irfz24a.pdf Size:494K _samsung

IRFZ25
IRFZ25

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 60V ? Lower RDS(ON) : 0.050 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

Datasheet: IRFZ15 , IRFZ20 , IRFZ22 , IRFZ24 , IRFZ24A , IRFZ24N , IRFZ24NL , IRFZ24NS , IRF9Z34 , IRFZ30 , IRFZ32 , IRFZ34 , IRFZ34A , IRFZ34E , IRFZ34N , IRFZ34NL , IRFZ34NS .

 


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