All MOSFET Datasheet

 

IRFZ25 MOSFET (IC) Datasheet. Cross Reference Search. IRFZ25 Equivalent

Type Designator: IRFZ25

Type of IRFZ25 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 60

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 14

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFZ25 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.12

Package: TO220

IRFZ25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ25 PDF doc:

5.1. irfz24n_1.pdf Size:53K _philips

IRFZ25
IRFZ25

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 17 A features very low on-state re

5.2. irfz20-22-fi.pdf Size:489K _st2

IRFZ25
IRFZ25

˙ţ

5.3. irfz24vs.pdf Size:123K _international_rectifier

IRFZ25
IRFZ25

PD - 94182 IRFZ24VS IRFZ24VL HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 60m? Fast Switching G Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

5.4. irfz1x_irfz2x_irfz3x_irfz4x.pdf Size:43K _international_rectifier

IRFZ25
IRFZ25

Powered by ICminer.com Electronic-Library Service CopyRight 2003

5.5. irfz24ns.pdf Size:159K _international_rectifier

IRFZ25
IRFZ25

PD - 9.1355B IRFZ24NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ24NS) Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature RDS(on) = 0.07? Fast Switching G Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res

5.6. irfz24n_1.pdf Size:53K _international_rectifier

IRFZ25
IRFZ25

Philips Semiconductors Product specification N-channel enhancement mode IRFZ24N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 17 A features very low on-state re

5.7. irfz24n.pdf Size:123K _international_rectifier

IRFZ25
IRFZ25

PD - 91354A IRFZ24N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 17A S Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area

5.8. irfz24v.pdf Size:200K _international_rectifier

IRFZ25
IRFZ25

PD - 94156 IRFZ24V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 60m? G Fast Switching Fully Avalanche Rated ID = 17A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

5.9. irfz24s-l.pdf Size:193K _international_rectifier

IRFZ25
IRFZ25

PD - 9.891A IRFZ24S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175°C Operating Temperature RDS(on) = 0.10? Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

5.10. irfz24.pdf Size:166K _international_rectifier

IRFZ25
IRFZ25

5.11. irfz24s.pdf Size:359K _international_rectifier

IRFZ25
IRFZ25

PD - 9.891A IRFZ24S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ24S) Low-profile through-hole (IRFZ24L) 175°C Operating Temperature RDS(on) = 0.10? Fast Switching G ID = 17A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Th

5.12. irfz24a.pdf Size:494K _samsung

IRFZ25
IRFZ25

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.07 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 60V ? Lower RDS(ON) : 0.050 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

See also transistors datasheet: IRFZ15 , IRFZ20 , IRFZ22 , IRFZ24 , IRFZ24A , IRFZ24N , IRFZ24NL , IRFZ24NS , IRF9Z34 , IRFZ30 , IRFZ32 , IRFZ34 , IRFZ34A , IRFZ34E , IRFZ34N , IRFZ34NL , IRFZ34NS .

Search Terms:

 IRFZ25 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IRFZ25
  IRFZ25
  IRFZ25
  IRFZ25
 
IRFZ25
  IRFZ25
  IRFZ25
  IRFZ25
 

social 

LIST

Last Update

MOSFET: RFP2N18L | RFL1P10 | RFL1P08 | RFL2N06L | RFL2N06 | RFL2N05L | RFL2N05 | RFL1N20L | RFL1N20 | RFL1N18L | RFL1N18 | RFL1N10 | RFL1N08 | SM7308CSKP | SM6043CSQ |

Enter a full or partial SMD code with a minimum of 2 letters or numbers