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IRFZ34E MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ34E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 68 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm

Package: TO220AB

IRFZ34E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ34E PDF doc:

1.1. irfz34e.pdf Size:120K _international_rectifier

IRFZ34E
IRFZ34E

PD - 9.1672A IRFZ34E HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.042? Fast Switching G Ease of Paralleling ID = 28A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per s

4.1. irfz34pbf.pdf Size:2027K _international_rectifier

IRFZ34E
IRFZ34E

PD - 94944 IRFZ34PbF • Lead-Free 01/14/04 Document Number: 91290 www.vishay.com 1 IRFZ34PbF Document Number: 91290 www.vishay.com 2 IRFZ34PbF Document Number: 91290 www.vishay.com 3 IRFZ34PbF Document Number: 91290 www.vishay.com 4 IRFZ34PbF Document Number: 91290 www.vishay.com 5 IRFZ34PbF Document Number: 91290 www.vishay.com 6 IRFZ34PbF TO-220AB Package Outline Dime

4.2. irfz34vs.pdf Size:128K _international_rectifier

IRFZ34E
IRFZ34E

PD - 94180 IRFZ34VS IRFZ34VL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 28m? G Optimized for SMPS Applications Description ID = 30A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing techniques to

4.3. irfz34v.pdf Size:104K _international_rectifier

IRFZ34E
IRFZ34E

PD - 94042 IRFZ34V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 28m? G Fast Switching Fully Avalanche Rated ID = 30A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

4.4. irfz34.pdf Size:171K _international_rectifier

IRFZ34E
IRFZ34E

4.5. irfz34s.pdf Size:302K _international_rectifier

IRFZ34E
IRFZ34E

PD - 9.892A IRFZ34S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Operating Temperature RDS(on) = 0.050? Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

4.6. irfz34n.pdf Size:104K _international_rectifier

IRFZ34E
IRFZ34E

PD -9.1276C IRFZ34N HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.040? Fast Switching G Ease of Paralleling ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per si

4.7. irfz34ns.pdf Size:161K _international_rectifier

IRFZ34E
IRFZ34E

PD - 9.1311A IRFZ34NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature RDS(on) = 0.040? Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

4.8. irfz34s-l.pdf Size:193K _international_rectifier

IRFZ34E
IRFZ34E

PD - 9.892A IRFZ34S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Operating Temperature RDS(on) = 0.050? Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

4.9. irfz34a.pdf Size:500K _samsung

IRFZ34E
IRFZ34E

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature µA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

4.10. irfz34_sihfz34.pdf Size:1556K _vishay

IRFZ34E
IRFZ34E

IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (?)VGS = 10 V 0.050 RoHS* • Fast Switching Qg (Max.) (nC) 46 COMPLIANT • Ease of Paralleling Qgs (nC) 11 Qgd (nC) 22 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thir

Datasheet: IRFZ24N , IRFZ24NL , IRFZ24NS , IRFZ25 , IRFZ30 , IRFZ32 , IRFZ34 , IRFZ34A , BUZ90A , IRFZ34N , IRFZ34NL , IRFZ34NS , IRFZ35 , IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 .

 


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