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IRFZ35 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ35

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: TO220

IRFZ35 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ35 PDF doc:

5.1. irfz34pbf.pdf Size:2027K _international_rectifier

IRFZ35
IRFZ35

PD - 94944 IRFZ34PbF • Lead-Free 01/14/04 Document Number: 91290 www.vishay.com 1 IRFZ34PbF Document Number: 91290 www.vishay.com 2 IRFZ34PbF Document Number: 91290 www.vishay.com 3 IRFZ34PbF Document Number: 91290 www.vishay.com 4 IRFZ34PbF Document Number: 91290 www.vishay.com 5 IRFZ34PbF Document Number: 91290 www.vishay.com 6 IRFZ34PbF TO-220AB Package Outline Dime

5.2. irfz1x_irfz2x_irfz3x_irfz4x.pdf Size:43K _international_rectifier

IRFZ35
IRFZ35

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5.3. irfz34e.pdf Size:120K _international_rectifier

IRFZ35
IRFZ35

PD - 9.1672A IRFZ34E HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 60V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.042? Fast Switching G Ease of Paralleling ID = 28A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per s

5.4. irfz34vs.pdf Size:128K _international_rectifier

IRFZ35
IRFZ35

PD - 94180 IRFZ34VS IRFZ34VL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 60V 175°C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 28m? G Optimized for SMPS Applications Description ID = 30A Advanced HEXFET® Power MOSFETs from International S Rectifier utilize advanced processing techniques to

5.5. irfz34v.pdf Size:104K _international_rectifier

IRFZ35
IRFZ35

PD - 94042 IRFZ34V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 28m? G Fast Switching Fully Avalanche Rated ID = 30A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

5.6. irfz34.pdf Size:171K _international_rectifier

IRFZ35
IRFZ35

5.7. irfz34s.pdf Size:302K _international_rectifier

IRFZ35
IRFZ35

PD - 9.892A IRFZ34S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Operating Temperature RDS(on) = 0.050? Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

5.8. irfz34n.pdf Size:104K _international_rectifier

IRFZ35
IRFZ35

PD -9.1276C IRFZ34N HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.040? Fast Switching G Ease of Paralleling ID = 29A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per si

5.9. irfz34ns.pdf Size:161K _international_rectifier

IRFZ35
IRFZ35

PD - 9.1311A IRFZ34NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature RDS(on) = 0.040? Fast Switching G Fully Avalanche Rated ID = 29A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

5.10. irfz34s-l.pdf Size:193K _international_rectifier

IRFZ35
IRFZ35

PD - 9.892A IRFZ34S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ34S) Low-profile through-hole (IRFZ34L) 175°C Operating Temperature RDS(on) = 0.050? Fast Switching G ID = 30A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T

5.11. irfz34a.pdf Size:500K _samsung

IRFZ35
IRFZ35

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature µA Lower Leakage Current : 10 (Max.) @ VDS = 60V Lower RDS(ON) : 0.030 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol

5.12. irfz34_sihfz34.pdf Size:1556K _vishay

IRFZ35
IRFZ35

IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (?)VGS = 10 V 0.050 RoHS* • Fast Switching Qg (Max.) (nC) 46 COMPLIANT • Ease of Paralleling Qgs (nC) 11 Qgd (nC) 22 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thir

Datasheet: IRFZ30 , IRFZ32 , IRFZ34 , IRFZ34A , IRFZ34E , IRFZ34N , IRFZ34NL , IRFZ34NS , 2SK105 , IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES .

 


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