IRFZ40FI MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFZ40FI

Type of IRFZ40FI transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 45

Maximum drain-source voltage |Uds|, V: 50V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 27

Maximum junction temperature (Tj), °C: 175

Rise Time of IRFZ40FI transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2200

Maximum drain-source on-state resistance (Rds), Ohm: 0.028

Package: ISOWATT220

Equivalent transistors for IRFZ40FI

IRFZ40FI PDF documents for downloads:

4.1. irfz40.pdf Size:181K _st

IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRFZ40 50 V < 0.028 ? 50 A IRFZ40FI 50 V < 0.028 ? 27 A TYPICAL R = 0.022 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS INTERNAL SCHEMATIC DIAGRAM AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRFZ40 IRFZ40FI VDS Drain-source Voltage (VGS = 0) 50 50 V VDG R Drain- gate Voltage (RGS = 20 k?)50 50 V V Gate-source Voltage ± 20 V GS o I Drain Current (cont.) at T = 25 C50 27 A D c o I Drain Current (cont.) at T = 100 C3519 A D c I (•) Drain Current (pulsed) 200 200 A DM o P Total Dissipation

4.2. irfz40.pdf Size:181K _international_rectifier

IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRFZ40 50 V < 0.028 ? 50 A IRFZ40FI 50 V < 0.028 ? 27 A TYPICAL R = 0.022 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS INTERNAL SCHEMATIC DIAGRAM AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRFZ40 IRFZ40FI VDS Drain-source Voltage (VGS = 0) 50 50 V VDG R Drain- gate Voltage (RGS = 20 k?)50 50 V V Gate-source Voltage ± 20 V GS o I Drain Current (cont.) at T = 25 C50 27 A D c o I Drain Current (cont.) at T = 100 C3519 A D c I (•) Drain Current (pulsed) 200 200 A DM o P Total Dissipation

4.3. irfz40_sihfz40.pdf Size:1475K _vishay

IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 • 175 °C Operating Temperature RDS(on) (?)VGS = 10 V 0.028 • Fast Switching Qg (Max.) (nC) 67 • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generation Power MOSFETs from Vishay provide the TO-220AB designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D S and low package cost of the TO-220AB contribute to its G N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRFZ40PbF Lead (Pb)-free SiHFZ40-E3 IRFZ40 SnPb SiHFZ40 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unles

See also transistors datasheet: IRFZ34 , IRFZ34A , IRFZ34E , IRFZ34N , IRFZ34NL , IRFZ34NS , IRFZ35 , IRFZ40 , IRF511 , IRFZ42 , IRFZ44 , IRFZ44A , IRFZ44E , IRFZ44EL , IRFZ44ES , IRFZ44N , IRFZ44NL .

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