MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFZ44E
  IRFZ44E
  IRFZ44E
 
IRFZ44E
  IRFZ44E
  IRFZ44E
 
IRFZ44E
  IRFZ44E
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF400N80Z
FCPF600N60Z ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA905P
FDMA908PZ ..FDMS8570SDC
FDMS86101 ..FDPF20N50FT
FDPF20N50T ..FDT86256
FDU3N40 ..FQD17P06
FQD18N20V2 ..FQU11P06
FQU12N20 ..FSF9150D
FSF9150R ..H7N0307AB
H7N0307LD ..HAT2170N
HAT2171H ..HUF76107D3S
HUF76107P3 ..IPB097N08N3G
IPB100N04S2-04 ..IPD50N06S2L-14
IPD50N06S4-09 ..IPP04CN10NG
IPP04N03LBG ..IPW60R190E6
IPW60R199CP ..IRF3707ZS
IRF3708 ..IRF6674
IRF6678 ..IRF7663
IRF7665S2 ..IRF9Z30
IRF9Z32 ..IRFHM830D
IRFHM831 ..IRFP264
IRFP2907 ..IRFR9214
IRFR9220 ..IRFS9622
IRFS9623 ..IRFY9240
IRFY9240C ..IRLI630A
IRLI630G ..IRLZ44NL
IRLZ44NS ..IXFH32N50Q
IXFH340N075T2 ..IXFM13N50
IXFM13N80 ..IXFR30N60P
IXFR32N100P ..IXFX320N17T2
IXFX32N100P ..IXTA90N055T2
IXTA90N075T2 ..IXTH76N25T
IXTH76P10T ..IXTP3N60P
IXTP42N15T ..IXTT96N15P
IXTT96N20P ..KF5N50DZ
KF5N50F ..KP509B9
KP509V9 ..MEM610
MEM614 ..MTC380Q8
MTC4501Q8 ..MTN4410V8
MTN4424Q8 ..NDB7051L
NDB7052 ..NTD5865N
NTD5865NL ..NX3008NBK
NX3008NBKS ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFF60P06
RFF70N06 ..RJK1212DNS
RJK1212DPA ..RSF015N06
RSH065N06 ..SDF220
SDF230JAA ..SFW9510
SFW9520 ..SMK0460F
SMK0460I ..SML601R3CN
SML601R3GN ..SPD06N60C3
SPD06N80C3 ..SSG4502C
SSG4502CE ..SSM3K15AMFV
SSM3K15CT ..SSP7434N
SSP7436N ..STB6N52K3
STB6NK60Z ..STD60NF55L-1
STD60NF55LA ..STG8205
STG8209 ..STM4433A
STM4435 ..STP21N05LFI
STP21N06L ..STP6NK90Z
STP70L60 ..STT3520C
STT3585 ..STW12N60
STW12NA50 ..TK13P25D
TK14A45D ..TPC8027
TPC8028 ..TPCC8076
TPCC8084 ..UT4446
UT45N03 ..ZVN4306G
ZVN4306GV ..ZXMS6006SG
 
IRFZ44E All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFZ44E MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFZ44E

Type of IRFZ44E transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 110

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 48

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFZ44E transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.023

Package: TO220AB

Equivalent transistors for IRFZ44E

IRFZ44E PDF doc:

1.1. irfz44es.pdf Size:163K _international_rectifier

IRFZ44E
IRFZ44E
PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature RDS(on) = 0.023? G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die D 2 Pak TO-262 sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal con

1.2. irfz44e.pdf Size:96K _international_rectifier

IRFZ44E
IRFZ44E
PD - 91671B IRFZ44E HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.023? G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10

4.1. irfz44ns_1.pdf Size:57K _philips

IRFZ44E
IRFZ44E
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

4.2. irfz44n_1.pdf Size:52K _philips

IRFZ44E
IRFZ44E
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

4.3. irfz44s.pdf Size:325K _international_rectifier

IRFZ44E
IRFZ44E
PD - 9.893A IRFZ44S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175°C Operating Temperature RDS(on) = 0.028? Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipat

4.4. irfz44vs.pdf Size:145K _international_rectifier

IRFZ44E
IRFZ44E
PD - 94050A IRFZ44VS IRFZ44VL HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175°C Operating Temperature Fast Switching RDS(on) = 16.5m? Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die D2Pak TO-262 sizes up to HEX-4. It provides the highest power capability and the lowest possible IRFZ44VS IRFZ44VL on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications

4.5. irfz44ns_1.pdf Size:57K _international_rectifier

IRFZ44E
IRFZ44E
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

4.6. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44E
IRFZ44E
PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET® Power MOSFET Low-profile through-hole (IRFZ44NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET® Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, S combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable D 2 Pak TO-262 for high current applications because of its low internal

4.7. irfz44v.pdf Size:229K _international_rectifier

IRFZ44E
IRFZ44E
PD - 93957A IRFZ44V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Pa

4.8. irfz44n_1.pdf Size:52K _international_rectifier

IRFZ44E
IRFZ44E
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

4.9. irfz44n.pdf Size:100K _international_rectifier

IRFZ44E
IRFZ44E
PD - 94053 IRFZ44N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

4.10. irfz44rpbf.pdf Size:221K _international_rectifier

IRFZ44E
IRFZ44E
PD - 94823 IRFZ44RPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.028? G l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 ID = 50*A for Linear/Audio Applications S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial- industrial applications at power dissipation levels to TO-220AB approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance

4.11. irfz44.pdf Size:859K _international_rectifier

IRFZ44E
IRFZ44E
PD - 94943 IRFZ44PbF • Lead-Free 01/14/04 Document Number: 91291 www.vishay.com 1 IRFZ44PbF Document Number: 91291 www.vishay.com 2 IRFZ44PbF Document Number: 91291 www.vishay.com 3 IRFZ44PbF Document Number: 91291 www.vishay.com 4 IRFZ44PbF Document Number: 91291 www.vishay.com 5 IRFZ44PbF Document Number: 91291 www.vishay.com 6 IRFZ44PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

4.12. irfz44r.pdf Size:153K _international_rectifier

IRFZ44E
IRFZ44E
PD - 93956 IRFZ44R HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.028? G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ44 S for Linear/Audio Applications Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial- industrial applications at power dissipation levels to TO-220AB approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the indust

4.13. irfz44a.pdf Size:503K _samsung

IRFZ44E
IRFZ44E
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V ? Lower RDS(ON) : 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 o ) C 50 ID A Continuous Drain Current (TC=100 oC) 35.4 IDM Drain Current-Pulsed A 1 200 O _ 20 VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 857 O IAR Avalanche Current 50 A 1 O EAR Repetitive Avalanche Energy 1 12.6 mJ O dv/dt Peak Diode Recovery dv/dt 3 5.5 V/ns O Total Power Dissipation (TC=25 o ) C 126 W PD Linear Derating Factor W/ o 0.84 C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Te

4.14. irfz44r_sihfz44r.pdf Size:1287K _vishay

IRFZ44E
IRFZ44E
IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (?)VGS = 10 V 0.028 RoHS* • Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 18 • Fully Avalanche Rated Qgd (nC) 25 • Drop in Replacement of the IRFZ44, SiHFZ44 for Configuration Single Linear/Audio Applications • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with G the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a S D wide variety of applications. G S The TO-220AB package is universally preferred for all commercial-industrial applications at po

4.15. irfz44_sihfz44.pdf Size:1540K _vishay

IRFZ44E
IRFZ44E
IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (?)VGS = 10 V 0.028 RoHS* • Fast Switching Qg (Max.) (nC) 67 COMPLIANT • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generation Power MOSFETs from Vishay provide the TO-220AB designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D S and low package cost of the TO-220AB contribute to its G N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRFZ44PbF Lead (Pb)-free SiHFZ44-E3 IRFZ44 SnPb SiHFZ44 ABSOLUTE MAXIM

4.16. irfz44s_irfz44l_sihfz44s_sihfz44l.pdf Size:790K _vishay

IRFZ44E
IRFZ44E
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) (?)VGS = 10 V 0.028 • Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) • 175 °C Operating Temperature Qgs (nC) 18 • Fast Switching Qgd (nC) 25 • Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay utilize D advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with I2PAK (TO-262) D2PAK (TO-263) the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide G variety of applications. G D S The D2PAK is a surface mount power package capable of D S G accommodating die sizes up to H

4.17. irfz44n.pdf Size:145K _inchange_semiconductor

IRFZ44E
IRFZ44E
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 49 A IDM Drain Current-Single Pluse (tp?10?s) 160 A PD Total Dissipation @TC=25? 94 W Max. Operating Junction Temperature 175 ? TJ Storage Temperature -55~175 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARA

4.18. irfz44cn.pdf Size:145K _inchange_semiconductor

IRFZ44E
IRFZ44E
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 49 A IDM Drain Current-Single Pluse (tp?10?s) 160 A PD Total Dissipation @TC=25? 94 W Max. Operating Junction Temperature 175 ? TJ Storage Temperature -55~175 ? Tstg THERMAL CHARACTERISTICS SYMBOL PAR

See also transistors datasheet: IRFZ34NL , IRFZ34NS , IRFZ35 , IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , 2SK4106 , IRFZ44EL , IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL .

Keywords

 IRFZ44E Datasheet  IRFZ44E Datenblatt  IRFZ44E RoHS  IRFZ44E Distributor
 IRFZ44E Application Notes  IRFZ44E Component  IRFZ44E Circuit  IRFZ44E Schematic
 IRFZ44E Equivalent  IRFZ44E Cross Reference  IRFZ44E Data Sheet  IRFZ44E Fiche Technique

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