MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRFZ44E
  IRFZ44E
  IRFZ44E
 
IRFZ44E
  IRFZ44E
  IRFZ44E
 
IRFZ44E
  IRFZ44E
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB35N06ZL
MTB50P03HDL ..NTB35N15
NTB45N06 ..NTP5404N
NTP5863N ..PHP69N03LT
PHP6N10E ..PSMN063-150D
PSMN069-100YS ..RF1K49221
RF1K49223 ..RJK0396DPA
RJK0397DPA ..RQJ0201UGDQA
RQJ0202VGDQA ..SDF11N90GAF
SDF120JAA-D ..SFS9Z24
SFS9Z34 ..SMG3401
SMG3402 ..SML50H19
SML50H24 ..SPI08N80C3
SPI11N60C3 ..SSG4910N
SSG4920N ..SSM3K320T
SSM3K329R ..SSQ5N50
SSQ6N60 ..STD10N10L-1
STD10N10LT4 ..STD95N4F3
STD95N4LF3 ..STI18NM60N
STI200N6F3 ..STP18N10
STP18N10FI ..STP60N55F3
STP60NF03L ..STV33N10
STV36N06 ..TJ80S04M3L
TJ8S06M3L ..TPC6001
TPC6003 ..TPCA8080
TPCA8081 ..UT2311
UT2312 ..WTL2602
WTL2622 ..ZXMP4A57E6
ZXMP6A13F ..ZXMS6006SG
 
IRFZ44E All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRFZ44E MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRFZ44E

Type of IRFZ44E transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 110

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 48

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFZ44E transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.023

Package: TO220AB

Equivalent transistors for IRFZ44E

IRFZ44E PDF doc:

1.1. irfz44es.pdf Size:163K _international_rectifier

IRFZ44E
IRFZ44E
PD - 9.1714 IRFZ44ES/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature RDS(on) = 0.023? G Fast Switching Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die D 2 Pak TO-262 sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal con

1.2. irfz44e.pdf Size:96K _international_rectifier

IRFZ44E
IRFZ44E
PD - 91671B IRFZ44E HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.023? G Fully Avalanche Rated ID = 48A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10

4.1. irfz44ns_1.pdf Size:57K _philips

IRFZ44E
IRFZ44E
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

4.2. irfz44n_1.pdf Size:52K _philips

IRFZ44E
IRFZ44E
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

4.3. irfz44s.pdf Size:325K _international_rectifier

IRFZ44E
IRFZ44E
PD - 9.893A IRFZ44S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175°C Operating Temperature RDS(on) = 0.028? Fast Switching G ID = 50A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 highest power capability and the lowest possible on- D Pa k TO-262 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipat

4.4. irfz44vs.pdf Size:145K _international_rectifier

IRFZ44E
IRFZ44E
PD - 94050A IRFZ44VS IRFZ44VL HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 60V 175°C Operating Temperature Fast Switching RDS(on) = 16.5m? Fully Avalanche Rated G Optimized for SMPS Applications ID = 55A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die D2Pak TO-262 sizes up to HEX-4. It provides the highest power capability and the lowest possible IRFZ44VS IRFZ44VL on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications

4.5. irfz44ns_1.pdf Size:57K _international_rectifier

IRFZ44E
IRFZ44E
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a surface mounting VDS Drain-source voltage 55 V plastic envelope using ’trench’ ID Drain current (DC) 49 A technology. The device features very Ptot Total power dissipation 110 W low on-state resistance and has Tj Junction temperature 175 ?C integral zener diodes giving ESD RDS(ON) Drain-source on-state 22 m? protection up to 2kV. It is intended for resistance VGS = 10 V use in switched mode power supplies and general purpose switching applications. PINNING - SOT404 (D2PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION d mb 1 gate 2 drain g 3 source 2 mb drain s 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source vo

4.6. irfz44ns.pdf Size:151K _international_rectifier

IRFZ44E
IRFZ44E
PD - 94153 IRFZ44NS IRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET® Power MOSFET Low-profile through-hole (IRFZ44NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.0175? Description G Advanced HEXFET® Power MOSFETs from International ID = 49A Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, S combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable D 2 Pak TO-262 for high current applications because of its low internal

4.7. irfz44v.pdf Size:229K _international_rectifier

IRFZ44E
IRFZ44E
PD - 93957A IRFZ44V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 16.5mW G Fast Switching Fully Avalanche Rated ID = 55A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Pa

4.8. irfz44n_1.pdf Size:52K _international_rectifier

IRFZ44E
IRFZ44E
Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 49 A features very low on-state resistance Ptot Total power dissipation 110 W and has integral zener diodes giving Tj Junction temperature 175 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 22 m? intended for use in switched mode resistance VGS = 10 V power supplies and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drai

4.9. irfz44n.pdf Size:100K _international_rectifier

IRFZ44E
IRFZ44E
PD - 94053 IRFZ44N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 17.5m? G Fast Switching Fully Avalanche Rated ID = 49A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C

4.10. irfz44rpbf.pdf Size:221K _international_rectifier

IRFZ44E
IRFZ44E
PD - 94823 IRFZ44RPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 60V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.028? G l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 ID = 50*A for Linear/Audio Applications S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial- industrial applications at power dissipation levels to TO-220AB approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance

4.11. irfz44.pdf Size:859K _international_rectifier

IRFZ44E
IRFZ44E
PD - 94943 IRFZ44PbF • Lead-Free 01/14/04 Document Number: 91291 www.vishay.com 1 IRFZ44PbF Document Number: 91291 www.vishay.com 2 IRFZ44PbF Document Number: 91291 www.vishay.com 3 IRFZ44PbF Document Number: 91291 www.vishay.com 4 IRFZ44PbF Document Number: 91291 www.vishay.com 5 IRFZ44PbF Document Number: 91291 www.vishay.com 6 IRFZ44PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

4.12. irfz44r.pdf Size:153K _international_rectifier

IRFZ44E
IRFZ44E
PD - 93956 IRFZ44R HEXFET® Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.028? G Fast Switching Fully Avalanche Rated ID = 50*A Drop in Replacement of the IRFZ44 S for Linear/Audio Applications Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial- industrial applications at power dissipation levels to TO-220AB approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the indust

4.13. irfz44a.pdf Size:503K _samsung

IRFZ44E
IRFZ44E
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input Capacitance ID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V ? Lower RDS(ON) : 0.020 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 o ) C 50 ID A Continuous Drain Current (TC=100 oC) 35.4 IDM Drain Current-Pulsed A 1 200 O _ 20 VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 857 O IAR Avalanche Current 50 A 1 O EAR Repetitive Avalanche Energy 1 12.6 mJ O dv/dt Peak Diode Recovery dv/dt 3 5.5 V/ns O Total Power Dissipation (TC=25 o ) C 126 W PD Linear Derating Factor W/ o 0.84 C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Te

4.14. irfz44r_sihfz44r.pdf Size:1287K _vishay

IRFZ44E
IRFZ44E
IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS (V) 60 Available • Ultra Low On-Resistance RDS(on) (?)VGS = 10 V 0.028 RoHS* • Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 67 • 175 °C Operating Temperature • Fast Switching Qgs (nC) 18 • Fully Avalanche Rated Qgd (nC) 25 • Drop in Replacement of the IRFZ44, SiHFZ44 for Configuration Single Linear/Audio Applications • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with G the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a S D wide variety of applications. G S The TO-220AB package is universally preferred for all commercial-industrial applications at po

4.15. irfz44_sihfz44.pdf Size:1540K _vishay

IRFZ44E
IRFZ44E
IRFZ44, SiHFZ44 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available • 175 °C Operating Temperature RDS(on) (?)VGS = 10 V 0.028 RoHS* • Fast Switching Qg (Max.) (nC) 67 COMPLIANT • Ease of Paralleling Qgs (nC) 18 Qgd (nC) 25 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generation Power MOSFETs from Vishay provide the TO-220AB designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D S and low package cost of the TO-220AB contribute to its G N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRFZ44PbF Lead (Pb)-free SiHFZ44-E3 IRFZ44 SnPb SiHFZ44 ABSOLUTE MAXIM

4.16. irfz44s_irfz44l_sihfz44s_sihfz44l.pdf Size:790K _vishay

IRFZ44E
IRFZ44E
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 60 • Advanced Process Technology RDS(on) (?)VGS = 10 V 0.028 • Surface Mount (IRFZ44S, SiHFZ44S) Qg (Max.) (nC) 67 • Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) • 175 °C Operating Temperature Qgs (nC) 18 • Fast Switching Qgd (nC) 25 • Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay utilize D advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with I2PAK (TO-262) D2PAK (TO-263) the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide G variety of applications. G D S The D2PAK is a surface mount power package capable of D S G accommodating die sizes up to H

4.17. irfz44n.pdf Size:145K _inchange_semiconductor

IRFZ44E
IRFZ44E
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 49 A IDM Drain Current-Single Pluse (tp?10?s) 160 A PD Total Dissipation @TC=25? 94 W Max. Operating Junction Temperature 175 ? TJ Storage Temperature -55~175 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARA

4.18. irfz44cn.pdf Size:145K _inchange_semiconductor

IRFZ44E
IRFZ44E
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES ·Drain Current –ID=49A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032?(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 49 A IDM Drain Current-Single Pluse (tp?10?s) 160 A PD Total Dissipation @TC=25? 94 W Max. Operating Junction Temperature 175 ? TJ Storage Temperature -55~175 ? Tstg THERMAL CHARACTERISTICS SYMBOL PAR

See also transistors datasheet: IRFZ34NL , IRFZ34NS , IRFZ35 , IRFZ40 , IRFZ40FI , IRFZ42 , IRFZ44 , IRFZ44A , 2SK4106 , IRFZ44EL , IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL .

Keywords

 IRFZ44E Datasheet  IRFZ44E Datenblatt  IRFZ44E RoHS  IRFZ44E Distributor
 IRFZ44E Application Notes  IRFZ44E Component  IRFZ44E Circuit  IRFZ44E Schematic
 IRFZ44E Equivalent  IRFZ44E Cross Reference  IRFZ44E Data Sheet  IRFZ44E Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages