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IRFZ48N MOSFET (IC) Datasheet. Cross Reference Search. IRFZ48N Equivalent

Type Designator: IRFZ48N

Type of IRFZ48N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 94

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 53

Maximum junction temperature (Tj), °C: 150

Rise Time of IRFZ48N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.016

Package: TO220AB

IRFZ48N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ48N PDF doc:

1.1. irfz48n_1.pdf Size:53K _philips

IRFZ48N
IRFZ48N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 64 A features very low on-state re

1.2. irfz48n.pdf Size:102K _international_rectifier

IRFZ48N
IRFZ48N

PD - 91406 IRFZ48N HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 14m? Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

1.3. irfz48n_1.pdf Size:53K _international_rectifier

IRFZ48N
IRFZ48N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 64 A features very low on-state re

1.4. irfz48ns.pdf Size:131K _international_rectifier

IRFZ48N
IRFZ48N

PD - 9.1408B IRFZ48NS IRFZ48NL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.014? Description G Advanced HEXFET® Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S techniques to achieve extre

1.5. irfz48n.pdf Size:144K _inchange_semiconductor

IRFZ48N
IRFZ48N

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES ·Drain Current –ID= 64A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.014?(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta

See also transistors datasheet: IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , BS170 , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L , IRL1004S , IRL2203N , IRL2203NL , IRL2203NS .

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 IRFZ48N - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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