All MOSFET. IRFZ48NS Datasheet

 

IRFZ48NS MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ48NS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 64 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: D2PAK

IRFZ48NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFZ48NS 说明书

1.1. irfz48ns.pdf Size:131K _international_rectifier

IRFZ48NS
IRFZ48NS

PD - 9.1408B IRFZ48NS IRFZ48NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.014? Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S techniques to achieve extre

3.1. irfz48n_1.pdf Size:53K _philips

IRFZ48NS
IRFZ48NS

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re

3.2. irfz48n.pdf Size:102K _international_rectifier

IRFZ48NS
IRFZ48NS

PD - 91406 IRFZ48N HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 14m? Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sil

3.3. irfz48n_1.pdf Size:53K _international_rectifier

IRFZ48NS
IRFZ48NS

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC) 64 A features very low on-state re

3.4. irfz48n.pdf Size:144K _inchange_semiconductor

IRFZ48NS
IRFZ48NS

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES ·Drain Current –ID= 64A@ TC=25? ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.014?(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta

Datasheet: IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , IRFZ48N , IRFZ48NL , IRF640 , IRL1004 , IRL1004L , IRL1004S , IRL2203N , IRL2203NL , IRL2203NS , IRL2505 , IRL2505L .

 


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