2SJ325 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ325

Type of 2SJ325 transistor: FET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 20

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4.0

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SJ325 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.15

Package: MP3

Equivalent transistors for 2SJ325

2SJ325 PDF documents for downloads:

1.1. 2sj325.pdf Size:386K _nec

5.1. 2sj320.pdf Size:94K _sanyo

Ordering number:EN4615A P-Channel Silicon MOSFET 2SJ320 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2063A · Low-voltage drive. [2SJ320] · Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –250 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID –4 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% –16 A 2.0 W Allowable Power Dissipation PD Tc=25?C 25 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=–1mA, VGS=0 –250 V Gate-to-Source Breakdown Voltage V(BR)GSS IG=±100µA,

5.2. 2sj324.pdf Size:344K _nec

5.3. 2sj327.pdf Size:346K _nec

5.4. 2sj326.pdf Size:386K _nec

5.5. 2sj328.pdf Size:346K _nec

5.6. 2sj329.pdf Size:343K _nec

See also transistors datasheet: 2SJ210 , 2SJ211 , 2SJ212 , 2SJ218 , 2SJ243 , 2SJ302 , 2SJ303 , 2SJ324 , IRL2505 , 2SJ326 , 2SJ327 , 2SJ328 , 2SJ329 , 2SJ330 , 2SJ331 , 2SJ353 , 2SJ411 .

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