MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SJ460
  2SJ460
  2SJ460
 
2SJ460
  2SJ460
  2SJ460
 
2SJ460
  2SJ460
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRFL024N
AUIRFP064N ..BF351
BF352 ..BLF6G22LS-180RN
BLF6G22LS-40P ..BSC0908NS
BSC0909NS ..BSZ067N06LS3G
BSZ076N06NS3G ..BUK7509-55A
BUK7509-75A ..BUK9608-55
BUK9608-55A ..BUZ908P
BUZ90A ..CEF10N4
CEF10N6 ..CEP730G
CEP73A3G ..DMG4468LK3
DMG4496SSS ..ECH8659
ECH8660 ..FDB3652_F085
FDB3672_F085 ..FDD6778A
FDD6780A ..FDMC8026S
FDMC8026S ..FDP100N10
FDP10N60NZ ..FDS4685
FDS4897AC ..FK10KM-10
FK10KM-12 ..FQD2N60C
FQD2N80 ..FQPF8N60CF
FQPF8N60CF ..FRS9130R
FRS9140D ..H5N2004DS
H5N2005DL ..HAT2070R
HAT2071R ..HUF75329S3ST
HUF75332G3 ..IPB025N10N3G
IPB027N10N3G ..IPD170N04NG
IPD180N10N3G ..IPI80N04S4L-04
IPI80N06S2-07 ..IPP90R800C3
IPS0151S ..IRF2903ZS
IRF2907Z ..IRF6608
IRF6609 ..IRF7469
IRF7470 ..IRF9612
IRF9613 ..IRFH5110
IRFH5204 ..IRFP150V
IRFP151 ..IRFR3711Z
IRFR3711ZC ..IRFS841
IRFS842 ..IRFW730A
IRFW740A ..IRLBA3803P
IRLBL1304 ..IRLW510A
IRLW520A ..IXFH21N50F
IXFH21N50Q ..IXFK80N60P3
IXFK88N20Q ..IXFR140N30P
IXFR14N100Q2 ..IXFX160N30T
IXFX16N90 ..IXTA48P05T
IXTA4N60P ..IXTH50N20
IXTH50N25T ..IXTP22N50PM
IXTP230N075T2 ..IXTT30N50P
IXTT30N60L2 ..KF1N60I
KF1N60L ..KML0D3P20V
KML0D4N20TV ..MCH3475
MCH3476 ..MTB60A06Q8
MTB60B06Q8 ..MTN3055L3
MTN3055M3 ..NCV8405
NCV8406 ..NTD4808N
NTD4809N ..NTTFS4939N
NTTFS4941N ..PHX3N60E
PHX4N60E ..PSMN2R2-25YLC
PSMN2R2-30YLC ..RFD14N05L
RFD14N05LSM ..RJK0629DPE
RJK0629DPK ..RQK0608BQDQS
RQK0609CQDQS ..SDF1NA60JDA
SDF200NA10HE ..SFW9620
SFW9624 ..SMK0860P
SMK0870F ..SML6060AN
SML6060BN ..SPP08P06PH
SPP11N60C3 ..SSH20N50
SSH20N50A ..SSM5P16FE
SSM5P16FU ..SSS6N60
SSS6N70A ..STD150N3LLH6
STD155N3H6 ..STE53NC50
STE70NM50 ..STK14N05
STK14N06 ..STP20NM60FP
STP20NM65N ..STP75NF68
STP75NF75 ..STW12NK60Z
STW12NK80Z ..TK13A25D
TK13A45D ..TPC8013-H
TPC8014 ..TPCC8008
TPCC8009 ..UT40N03T
UT40N04 ..ZVN3320A
ZVN3320F ..ZXMS6006SG
 
2SJ460 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SJ460 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ460

Type of 2SJ460 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 0.25

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SJ460 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 75

Package: SST

Equivalent transistors for 2SJ460

2SJ460 PDF doc:

1.1. 2sj460.pdf Size:294K _nec

2SJ460
2SJ460

5.1. 2sj465.pdf Size:371K _toshiba

2SJ460
2SJ460
2SJ465 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ465 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 2.5 V gate drive Low drain-source ON resistance : R = 0.54 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = -100 A (max) DSS (V = -16 V) DS Enhancement-mode : Vth = -0.5~-1.1 V (V = -10 V, I = -200 A) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -16 V Drain-gate voltage (RGS = 20 k?) VDGR -16 V Gate-source voltage VGSS 8 V DC (Note 1) ID -2 JEDEC ? Drain current A Pulse (Note 1) IDP -6 JEITA ? Drain power dissipation PD 0.5 W TOSHIBA 2-5K1B Drain power dissipation (Note 2) PD 1.5 W Weight: 0.05 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note 1: Please use devices on condition that the channel temperature is below 150C. N

5.2. 2sj464.pdf Size:319K _toshiba

2SJ460
2SJ460

5.3. 2sj466.pdf Size:39K _sanyo

2SJ460
2SJ460
Ordering number:ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2128 4V drive. [2SJ466] Enables simplified fabrication, high-density mount- 8.2 7.8 ing, and miniaturization in end products due to the 6.2 0.6 3 surface mountable package. 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 7.8 10.0 6.0 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 35 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 140 A Allowable Power Dissipation PD Tc=25?C 50 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS

5.4. 2sj461.pdf Size:711K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 0.2 by a 2.5 V power source. +0.1 0.65 0.15 1.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. 2 FEATURES 3 Can be driven by a 2.5 V power source Not necessary to consider driving current because of its high 1 input impedance. Marking Possible to reduce the number of parts by omitting the bias resistor. ORDERING INFORMATION 1. Source PART NUMBER PACKAGE 2. Gate 3. Drain 2SJ461 SC-59 (Mini Mold) Marking: H19 ABSOLUTE MAXIMUM RATINGS (TA = 25C) EQUIVALENT CIRCUIT Drain to Source Voltage (VGS = 0 V) VDSS -50 V Gate to Source Voltage (VDS = 0 V) VGSS m7.0 V Drain Drain Current (DC) ID(DC) m0.1 A Drain Current (pulse) Note ID(pulse) m

5.5. 2sj463a.pdf Size:138K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ463A is a switching device which can be driven directly 2.1 0.1 by a 2.5 V power source. 1.25 0.1 The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. 2 FEATURES 3 Can be driven by a 2.5 V power source Low gate cut-off voltage 1 Marking ORDERING INFORMATION PART NUMBER PACKAGE 2SJ463A SC-70 (SSP) Marking: H21 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS -30 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V EQUIVALENT CIRCUIT Drain Current (DC) ID(DC) m0.1 A Drain Drain Current (pulse) Note ID(pulse) m0.4 A Total Power Dissipation PT 150 mW Body Channel Temperature Tch 150 C Gate Diode Storage Temperature Tstg -55 to +150 C Gate Prot

5.6. 2sj462.pdf Size:62K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings (unit : mm) The 2SJ462 is a switching device which can be driven directly 5.7 0.1 by an IC operating at 3 V. 1.5 0.1 2.0 0.2 The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applica- tions such as power management. 1 2 3 FEATURES 0.5 0.1 0.5 0.1 Can be driven by a 2.5 V power source. 0.4 0.05 New-type compact package. 2.1 0.85 0.1 4.2 Has advantages of packages for small signals and for power transistors, and compensates those disadvantages. Low on-state resistance. Equivalent Circuit RDS(ON) : 0.29 ? MAX. @VGS = 2.5 V, ID = 0.5 A RDS(ON) : 0.19 ? MAX. @VGS = 4.0 V, ID = 1.0 A Electrode Connection Drain ABSOLUTE MAXIMUM RATINGS (TA = +25 ?C) 1. Source 2. Drain Drain to Source Voltage VDSS 12 V 3. Gate Gate to Source Voltage VGSS

See also transistors datasheet: 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , IRF5210 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 .

Keywords

 2SJ460 Datasheet  2SJ460 Datenblatt  2SJ460 RoHS  2SJ460 Distributor
 2SJ460 Application Notes  2SJ460 Component  2SJ460 Circuit  2SJ460 Schematic
 2SJ460 Equivalent  2SJ460 Cross Reference  2SJ460 Data Sheet  2SJ460 Fiche Technique

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