MOSFET Datasheet


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2SJ460
  2SJ460
  2SJ460
 
2SJ460
  2SJ460
  2SJ460
 
2SJ460
  2SJ460
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP0603GM-HF
AP06P20GJ-HF ..AP2607AGY-HF
AP2607GY-HF ..AP4502AGM-HF
AP4502GM ..AP80N30W
AP80T10GP-HF ..AP9579GS-HF
AP9581GP-HF ..APT1001R2HN
APT1001R3AN ..ATP212
ATP213 ..AUIRFU4615
AUIRFU5305 ..BFC19
BFC21 ..BLL1214-250
BLL1214-250R ..BSO110N03MSG
BSO119N03S ..BUK453-100A
BUK454-800A ..BUK764R0-55B
BUK764R0-75C ..BUK9Y104-100B
BUK9Y11-30B ..CEB60N06G
CEB60N10 ..CEM4204
CEM4207 ..CEU14G04
CEU16N10 ..DMN3404L
DMN3730U ..FCD7N60
FCD9N60NTM ..FDC6305N
FDC6306P ..FDG6318PZ
FDG6320C ..FDMS7608S
FDMS7608S ..FDP8874
FDP8874 ..FDS8449_F085
FDS86106 ..FQA11N90C_F109
FQA11N90_F109 ..FQP24N08
FQP27N25 ..FRF450R
FRF9150D ..FSS234R
FSS23A4D ..H7N1002AB
H7N1002LD ..HAT2202C
HAT2203C ..HUF76413D3S
HUF76413P3 ..IPB230N06L3G
IPB260N06N3G ..IPD90N03S4L-02
IPD90N03S4L-03 ..IPP110N06LG
IPP110N20N3G ..IRC5305
IRC530A ..IRF513
IRF520 ..IRF712
IRF713 ..IRF7831
IRF7832 ..IRFB4229
IRFB4233 ..IRFI644G
IRFI710A ..IRFP4410Z
IRFP442 ..IRFS3206
IRFS3207 ..IRFSZ30
IRFSZ32 ..IRFZ46Z
IRFZ46ZL ..IRLML9301
IRLML9303 ..IXFA6N120P
IXFA76N15T2 ..IXFH7N90
IXFH7N90Q ..IXFN22N120
IXFN230N10 ..IXFT15N100Q
IXFT15N100Q3 ..IXKC15N60C5
IXKC19N60C5 ..IXTH110N25T
IXTH11N80 ..IXTK75N30
IXTK80N25 ..IXTP90N055T2
IXTP90N075T2 ..IXTX20N140
IXTX22N100L ..KHB019N20F1
KHB019N20F2 ..KP745B
KP745G ..MMBFJ210
MMBFJ211 ..MTDNK2N6
MTDP2004S6R ..MTN8N50E3
MTN8N50FP ..NDH8504P
NDP4050 ..NTJD4105C
NTJD4152P ..PHB42N03LT
PHB44N06LT ..PMV20XN
PMV213SN ..R5007ANJ
R5007ANX ..RFP40N10
RFP40N10LE ..RJK5012DPE
RJK5012DPP-M0 ..RU1C002ZP
RU1E002SP ..SDF9N100JED-U
SDF9N100SXH ..SID20N06-90I
SID3055 ..SML10B75
SML10B75XX ..SNN01Z10D
SNN01Z10Q ..SSD40N10-30D
SSD40P04-20D ..SSM3J134TU
SSM3J135TU ..SSM6N36TU
SSM6N37CTD ..STB18NM80
STB190NF04 ..STD3NK60ZD
STD3NK80Z ..STF6N52K3
STF6N62K3 ..STLT19FI
STLT20 ..STP3NK100Z
STP3NK60Z ..STS14N3LLH5
STS19N3LLH6 ..STW70N10F4
STW75N06 ..TK40J60T
TK40J60U ..TPC8121
TPC8122 ..TPCP8J01
TPCS8004 ..UTT200N03
UTT20N06 ..ZXMHC10A07T8
ZXMHC3A01N8 ..ZXMS6006SG
 
2SJ460 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SJ460 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ460

Type of 2SJ460 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 0.25

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SJ460 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 75

Package: SST

Equivalent transistors for 2SJ460

2SJ460 PDF doc:

1.1. 2sj460.pdf Size:294K _nec

2SJ460
2SJ460

5.1. 2sj465.pdf Size:371K _toshiba

2SJ460
2SJ460
2SJ465 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ465 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 2.5 V gate drive Low drain-source ON resistance : R = 0.54 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = -100 A (max) DSS (V = -16 V) DS Enhancement-mode : Vth = -0.5~-1.1 V (V = -10 V, I = -200 A) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -16 V Drain-gate voltage (RGS = 20 k?) VDGR -16 V Gate-source voltage VGSS 8 V DC (Note 1) ID -2 JEDEC ? Drain current A Pulse (Note 1) IDP -6 JEITA ? Drain power dissipation PD 0.5 W TOSHIBA 2-5K1B Drain power dissipation (Note 2) PD 1.5 W Weight: 0.05 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note 1: Please use devices on condition that the channel temperature is below 150C. N

5.2. 2sj464.pdf Size:319K _toshiba

2SJ460
2SJ460

5.3. 2sj466.pdf Size:39K _sanyo

2SJ460
2SJ460
Ordering number:ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2128 4V drive. [2SJ466] Enables simplified fabrication, high-density mount- 8.2 7.8 ing, and miniaturization in end products due to the 6.2 0.6 3 surface mountable package. 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 7.8 10.0 6.0 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 35 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 140 A Allowable Power Dissipation PD Tc=25?C 50 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS

5.4. 2sj461.pdf Size:711K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 0.2 by a 2.5 V power source. +0.1 0.65 0.15 1.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. 2 FEATURES 3 Can be driven by a 2.5 V power source Not necessary to consider driving current because of its high 1 input impedance. Marking Possible to reduce the number of parts by omitting the bias resistor. ORDERING INFORMATION 1. Source PART NUMBER PACKAGE 2. Gate 3. Drain 2SJ461 SC-59 (Mini Mold) Marking: H19 ABSOLUTE MAXIMUM RATINGS (TA = 25C) EQUIVALENT CIRCUIT Drain to Source Voltage (VGS = 0 V) VDSS -50 V Gate to Source Voltage (VDS = 0 V) VGSS m7.0 V Drain Drain Current (DC) ID(DC) m0.1 A Drain Current (pulse) Note ID(pulse) m

5.5. 2sj463a.pdf Size:138K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ463A is a switching device which can be driven directly 2.1 0.1 by a 2.5 V power source. 1.25 0.1 The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. 2 FEATURES 3 Can be driven by a 2.5 V power source Low gate cut-off voltage 1 Marking ORDERING INFORMATION PART NUMBER PACKAGE 2SJ463A SC-70 (SSP) Marking: H21 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS -30 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V EQUIVALENT CIRCUIT Drain Current (DC) ID(DC) m0.1 A Drain Drain Current (pulse) Note ID(pulse) m0.4 A Total Power Dissipation PT 150 mW Body Channel Temperature Tch 150 C Gate Diode Storage Temperature Tstg -55 to +150 C Gate Prot

5.6. 2sj462.pdf Size:62K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings (unit : mm) The 2SJ462 is a switching device which can be driven directly 5.7 0.1 by an IC operating at 3 V. 1.5 0.1 2.0 0.2 The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applica- tions such as power management. 1 2 3 FEATURES 0.5 0.1 0.5 0.1 Can be driven by a 2.5 V power source. 0.4 0.05 New-type compact package. 2.1 0.85 0.1 4.2 Has advantages of packages for small signals and for power transistors, and compensates those disadvantages. Low on-state resistance. Equivalent Circuit RDS(ON) : 0.29 ? MAX. @VGS = 2.5 V, ID = 0.5 A RDS(ON) : 0.19 ? MAX. @VGS = 4.0 V, ID = 1.0 A Electrode Connection Drain ABSOLUTE MAXIMUM RATINGS (TA = +25 ?C) 1. Source 2. Drain Drain to Source Voltage VDSS 12 V 3. Gate Gate to Source Voltage VGSS

See also transistors datasheet: 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , IRF5210 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 .

Keywords

 2SJ460 Datasheet  2SJ460 Datenblatt  2SJ460 RoHS  2SJ460 Distributor
 2SJ460 Application Notes  2SJ460 Component  2SJ460 Circuit  2SJ460 Schematic
 2SJ460 Equivalent  2SJ460 Cross Reference  2SJ460 Data Sheet  2SJ460 Fiche Technique

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