MOSFET Datasheet


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2SJ460
  2SJ460
  2SJ460
 
2SJ460
  2SJ460
  2SJ460
 
2SJ460
  2SJ460
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK653R2-55C
BUK653R3-30C ..BUK9213-30A
BUK9214-30A ..BUZ50A
BUZ50A-220M ..CED20P06
CED20P10 ..CEP02N6G
CEP02N7G ..CPH3351
CPH3355 ..DMP2104V
DMP210DUDJ ..FCPF7N60NT
FCPF9N60NT ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA3023PZ
FDMA3028N ..FDMS86105
FDMS86200 ..FDPF5N60NZ
FDPF680N10T ..FDS8978
FDS8978 ..FQB25N33TM_F085
FQB27P06 ..FQP9N90C
FQP9P25 ..FRM130D
FRM130H ..GWM160-0055X1-SL
GWM160-0055X1-SMD ..HAT1047R
HAT1047RJ ..HEPF2007A
HIRF630 ..IPA057N08N3G
IPA075N15N3G ..IPB80N04S3-03
IPB80N04S3-04 ..IPI100P03P3L-04
IPI110N20N3G ..IPP60R250CP
IPP60R280C6 ..IRF1010Z
IRF1010ZL ..IRF610S
IRF611 ..IRF7328
IRF7329 ..IRF840S
IRF841 ..IRFBL12N50A
IRFD014 ..IRFL110
IRFL210 ..IRFPG30
IRFPG40 ..IRFS520
IRFS520A ..IRFU310
IRFU310A ..IRL3705ZL
IRL3705ZS ..IRLR8729
IRLR8743 ..IXFE48N50Q
IXFE48N50QD2 ..IXFK240N15T2
IXFK24N100 ..IXFN48N60P
IXFN50N50 ..IXFT70N20Q3
IXFT74N20 ..IXTA15P15T
IXTA160N04T2 ..IXTH220N075T
IXTH22N50P ..IXTN90P20P
IXTP01N100D ..IXTQ40N50Q
IXTQ42N25P ..IXTZ35N25MB
IXTZ42N20MA ..KMA2D7DP20X
KMA2D8P20X ..KTK5132S
KTK5132U ..NDB4060
NDB4060L ..NTD4855N
NTD4856N ..NTUD3127C
NTUD3169CZ ..PHX7N60E
PHX8N50E ..PSMN2R7-30PL
PSMN2R8-40PS ..RFD7N10LESM
RFD8P05 ..RJK1052DPB
RJK1053DPB ..RSD175N10
RSD200N05 ..SDF3N90
SDF40N50JAM ..SGSP321
SGSP322 ..SML1004RGN
SML1004RKN ..SMN03T80IS
SMN0470F ..SSD15N10
SSD20N06-90D ..SSM3J09FU
SSM3J108TU ..SSM6N04FU
SSM6N05FU ..STB14NM50N
STB150NF04 ..STD38NH02L
STD3LN62K3 ..STF35N65M5
STF3LN62K3 ..STL60N3LLH5
STL65DN3LLH5 ..STP38N06
STP3LN62K3 ..STP9NK70Z
STP9NK70ZFP ..STW45NM60D
STW47NM60ND ..TK3A60DA
TK3A65D ..TPC8109
TPC8110 ..TPCP8301
TPCP8302 ..WTD9435
WTD9575 ..ZXMP2120FF
ZXMP2120G4 ..ZXMS6006SG
 
2SJ460 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SJ460 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ460

Type of 2SJ460 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 0.25

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SJ460 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 75

Package: SST

Equivalent transistors for 2SJ460

2SJ460 PDF doc:

1.1. 2sj460.pdf Size:294K _nec

2SJ460
2SJ460

5.1. 2sj465.pdf Size:371K _toshiba

2SJ460
2SJ460
2SJ465 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ465 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 2.5 V gate drive Low drain-source ON resistance : R = 0.54 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = -100 A (max) DSS (V = -16 V) DS Enhancement-mode : Vth = -0.5~-1.1 V (V = -10 V, I = -200 A) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -16 V Drain-gate voltage (RGS = 20 k?) VDGR -16 V Gate-source voltage VGSS 8 V DC (Note 1) ID -2 JEDEC ? Drain current A Pulse (Note 1) IDP -6 JEITA ? Drain power dissipation PD 0.5 W TOSHIBA 2-5K1B Drain power dissipation (Note 2) PD 1.5 W Weight: 0.05 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note 1: Please use devices on condition that the channel temperature is below 150C. N

5.2. 2sj464.pdf Size:319K _toshiba

2SJ460
2SJ460

5.3. 2sj466.pdf Size:39K _sanyo

2SJ460
2SJ460
Ordering number:ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2128 4V drive. [2SJ466] Enables simplified fabrication, high-density mount- 8.2 7.8 ing, and miniaturization in end products due to the 6.2 0.6 3 surface mountable package. 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 7.8 10.0 6.0 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 35 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 140 A Allowable Power Dissipation PD Tc=25?C 50 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS

5.4. 2sj462.pdf Size:62K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings (unit : mm) The 2SJ462 is a switching device which can be driven directly 5.7 0.1 by an IC operating at 3 V. 1.5 0.1 2.0 0.2 The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applica- tions such as power management. 1 2 3 FEATURES 0.5 0.1 0.5 0.1 Can be driven by a 2.5 V power source. 0.4 0.05 New-type compact package. 2.1 0.85 0.1 4.2 Has advantages of packages for small signals and for power transistors, and compensates those disadvantages. Low on-state resistance. Equivalent Circuit RDS(ON) : 0.29 ? MAX. @VGS = 2.5 V, ID = 0.5 A RDS(ON) : 0.19 ? MAX. @VGS = 4.0 V, ID = 1.0 A Electrode Connection Drain ABSOLUTE MAXIMUM RATINGS (TA = +25 ?C) 1. Source 2. Drain Drain to Source Voltage VDSS 12 V 3. Gate Gate to Source Voltage VGSS

5.5. 2sj461.pdf Size:711K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 0.2 by a 2.5 V power source. +0.1 0.65 0.15 1.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. 2 FEATURES 3 Can be driven by a 2.5 V power source Not necessary to consider driving current because of its high 1 input impedance. Marking Possible to reduce the number of parts by omitting the bias resistor. ORDERING INFORMATION 1. Source PART NUMBER PACKAGE 2. Gate 3. Drain 2SJ461 SC-59 (Mini Mold) Marking: H19 ABSOLUTE MAXIMUM RATINGS (TA = 25C) EQUIVALENT CIRCUIT Drain to Source Voltage (VGS = 0 V) VDSS -50 V Gate to Source Voltage (VDS = 0 V) VGSS m7.0 V Drain Drain Current (DC) ID(DC) m0.1 A Drain Current (pulse) Note ID(pulse) m

5.6. 2sj463a.pdf Size:138K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ463A is a switching device which can be driven directly 2.1 0.1 by a 2.5 V power source. 1.25 0.1 The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. 2 FEATURES 3 Can be driven by a 2.5 V power source Low gate cut-off voltage 1 Marking ORDERING INFORMATION PART NUMBER PACKAGE 2SJ463A SC-70 (SSP) Marking: H21 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS -30 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V EQUIVALENT CIRCUIT Drain Current (DC) ID(DC) m0.1 A Drain Drain Current (pulse) Note ID(pulse) m0.4 A Total Power Dissipation PT 150 mW Body Channel Temperature Tch 150 C Gate Diode Storage Temperature Tstg -55 to +150 C Gate Prot

See also transistors datasheet: 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , IRF5210 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 .

Keywords

 2SJ460 Datasheet  2SJ460 Datenblatt  2SJ460 RoHS  2SJ460 Distributor
 2SJ460 Application Notes  2SJ460 Component  2SJ460 Circuit  2SJ460 Schematic
 2SJ460 Equivalent  2SJ460 Cross Reference  2SJ460 Data Sheet  2SJ460 Fiche Technique

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