2SJ460 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ460

Type of 2SJ460 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 0.25

Maximum drain-source voltage |Uds|, V: 50V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SJ460 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 75

Package: SST

Equivalent transistors for 2SJ460

2SJ460 PDF documents for downloads:

1.1. 2sj460.pdf Size:294K _nec

5.1. 2sj464.pdf Size:319K _toshiba

5.2. 2sj465.pdf Size:371K _toshiba

2SJ465 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ465 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 2.5 V gate drive Low drain-source ON resistance : R = 0.54 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = -100 µA (max) DSS (V = -16 V) DS Enhancement-mode : Vth = -0.5~-1.1 V (V = -10 V, I = -200 µA) DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -16 V Drain-gate voltage (RGS = 20 k?) VDGR -16 V Gate-source voltage VGSS ±8 V DC (Note 1) ID -2 JEDEC ? Drain current A Pulse (Note 1) IDP -6 JEITA ? Drain power dissipation PD 0.5 W TOSHIBA 2-5K1B Drain power dissipation (Note 2) PD 1.5 W Weight: 0.05 g (typ.) Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note 1: Please use devices on condition that the channel temperature is below 150°C. N

5.3. 2sj466.pdf Size:39K _sanyo

Ordering number:ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2128 · 4V drive. [2SJ466] · Enables simplified fabrication, high-density mount- 8.2 7.8 ing, and miniaturization in end products due to the 6.2 0.6 3 surface mountable package. 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 7.8 10.0 6.0 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID –35 A Drain Current (Pulse) IDP PW? 10µ s, duty cycle? 1% –140 A Allowable Power Dissipation PD Tc=25?C 50 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS

5.4. 2sj462.pdf Size:62K _nec

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings (unit : mm) The 2SJ462 is a switching device which can be driven directly 5.7 ±0.1 by an IC operating at 3 V. 1.5 ±0.1 2.0 ±0.2 The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applica- tions such as power management. 1 2 3 FEATURES 0.5 ±0.1 0.5 ±0.1 • Can be driven by a 2.5 V power source. 0.4 ±0.05 • New-type compact package. 2.1 0.85 ±0.1 4.2 Has advantages of packages for small signals and for power transistors, and compensates those disadvantages. • Low on-state resistance. Equivalent Circuit RDS(ON) : 0.29 ? MAX. @VGS = –2.5 V, ID = –0.5 A RDS(ON) : 0.19 ? MAX. @VGS = –4.0 V, ID = –1.0 A Electrode Connection Drain ABSOLUTE MAXIMUM RATINGS (TA = +25 ?C) 1. Source 2. Drain Drain to Source Voltage VDSS –12 V 3. Gate Gate to Source Voltage VGSS ±

5.5. 2sj463a.pdf Size:138K _nec

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ463A is a switching device which can be driven directly 2.1 ±0.1 by a 2.5 V power source. 1.25 ±0.1 The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. 2 FEATURES 3 • Can be driven by a 2.5 V power source • Low gate cut-off voltage 1 Marking ORDERING INFORMATION PART NUMBER PACKAGE 2SJ463A SC-70 (SSP) Marking: H21 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS -30 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V EQUIVALENT CIRCUIT Drain Current (DC) ID(DC) m0.1 A Drain Drain Current (pulse) Note ID(pulse) m0.4 A Total Power Dissipation PT 150 mW Body Channel Temperature Tch 150 °C Gate Diode Storage Temperature Tstg -55 to +150 °C Gate Prot

5.6. 2sj461.pdf Size:711K _nec

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 ±0.2 by a 2.5 V power source. +0.1 0.65 –0.15 1.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. 2 FEATURES 3 • Can be driven by a 2.5 V power source • Not necessary to consider driving current because of its high 1 input impedance. Marking • Possible to reduce the number of parts by omitting the bias resistor. ORDERING INFORMATION 1. Source PART NUMBER PACKAGE 2. Gate 3. Drain 2SJ461 SC-59 (Mini Mold) Marking: H19 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) EQUIVALENT CIRCUIT Drain to Source Voltage (VGS = 0 V) VDSS -50 V Gate to Source Voltage (VDS = 0 V) VGSS m7.0 V Drain Drain Current (DC) ID(DC) m0.1 A Drain Current (pulse) Note ID(pulse) m

See also transistors datasheet: 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , 2N4416 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 .

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