MOSFET Datasheet


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2SJ460
  2SJ460
  2SJ460
 
2SJ460
  2SJ460
  2SJ460
 
2SJ460
  2SJ460
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF36N60N
FCPF380N60 ..FDD1600N10ALZ
FDD1600N10ALZD ..FDMA8051L
FDMA86265P ..FDMS8460
FDMS8558S ..FDPF18N20FT
FDPF18N20FT_G ..FDT439N
FDT457N ..FQD12N20L
FQD12N20LTM_F085 ..FQT1N60C
FQT1N80 ..FSF055D
FSF055R ..H5N5006LS
H5N5007P ..HAT2165N
HAT2166H ..HUF75639S_F085A
HUF75645P3 ..IPB072N15N3G
IPB075N04LG ..IPD50N03S2-07
IPD50N03S2L-06 ..IPP037N06L3G
IPP037N08N3G ..IPW60R075CP
IPW60R075CPA ..IRF3703
IRF3704Z ..IRF6641
IRF6643 ..IRF7523D1
IRF7524D1 ..IRF9Z14S
IRF9Z15 ..IRFH7936
IRFH8318 ..IRFP250N
IRFP251 ..IRFR9024
IRFR9024N ..IRFS9530
IRFS9531 ..IRFY430
IRFY430C ..IRLI510A
IRLI520A ..IRLZ30
IRLZ34 ..IXFH28N50Q
IXFH28N60P3 ..IXFL60N80P
IXFL70N60Q2 ..IXFR24N80P
IXFR24N90P ..IXFX250N10P
IXFX25N90 ..IXTA76P10T
IXTA7N60P ..IXTH6N150
IXTH6N50D2 ..IXTP32P05T
IXTP32P20T ..IXTT74N20P
IXTT75N10 ..KF3N80I
KF4N20LD ..KP504E
KP504G ..MCH6445
MCH6448 ..MTBB5B10Q8
MTBB5N10L3 ..MTN3820J3
MTN3K01N3 ..NDB6050L
NDB6051 ..NTD5407N
NTD5413N ..NVMFS4841N
NVTFS4823N ..PMBFJ211
PMBFJ212 ..PSMN4R0-40YS
PSMN4R1-30YLC ..RFD4N06L
RFD4N06LSM ..RJK1028DPA
RJK1028DSP ..RSD140P06
RSD150N06 ..SDF18N50
SDF1NA60JAA ..SFU9034
SFU9110 ..SMG5409
SMK0160 ..SML50L47
SML50M60BFN ..SPD02N80C3
SPD03N50C3 ..SSG4435
SSG4436N ..SSM3K124TU
SSM3K126TU ..SSP6N90A
SSP70N10A ..STB55NF03L
STB55NF06 ..STD5NK52ZD
STD5NK60Z ..STFI10NK60Z
STFI13NK60Z ..STLT30
STM101N ..STP20NF20
STP20NK50Z ..STP6N62K3
STP6N95K5 ..STT3414
STT3418 ..STV7NA60
STV8NA50 ..TK13A45D
TK13A50D ..TPC8014
TPC8016-H ..TPCC8009
TPCC8061-H ..UT40N04
UT4232 ..ZVN3320F
ZVN4106F ..ZXMS6006SG
 
2SJ460 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SJ460 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ460

Type of 2SJ460 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 0.25

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.1

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SJ460 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 75

Package: SST

Equivalent transistors for 2SJ460

2SJ460 PDF doc:

1.1. 2sj460.pdf Size:294K _nec

2SJ460
2SJ460

5.1. 2sj465.pdf Size:371K _toshiba

2SJ460
2SJ460
2SJ465 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSV) 2SJ465 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 2.5 V gate drive Low drain-source ON resistance : R = 0.54 ? (typ.) DS (ON) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = -100 A (max) DSS (V = -16 V) DS Enhancement-mode : Vth = -0.5~-1.1 V (V = -10 V, I = -200 A) DS D Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -16 V Drain-gate voltage (RGS = 20 k?) VDGR -16 V Gate-source voltage VGSS 8 V DC (Note 1) ID -2 JEDEC ? Drain current A Pulse (Note 1) IDP -6 JEITA ? Drain power dissipation PD 0.5 W TOSHIBA 2-5K1B Drain power dissipation (Note 2) PD 1.5 W Weight: 0.05 g (typ.) Channel temperature Tch 150 C Storage temperature range Tstg -55~150 C Note 1: Please use devices on condition that the channel temperature is below 150C. N

5.2. 2sj464.pdf Size:319K _toshiba

2SJ460
2SJ460

5.3. 2sj466.pdf Size:39K _sanyo

2SJ460
2SJ460
Ordering number:ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2128 4V drive. [2SJ466] Enables simplified fabrication, high-density mount- 8.2 7.8 ing, and miniaturization in end products due to the 6.2 0.6 3 surface mountable package. 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 7.8 10.0 6.0 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 35 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 140 A Allowable Power Dissipation PD Tc=25?C 50 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS

5.4. 2sj461.pdf Size:711K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ461 is a switching device which can be driven directly 2.8 0.2 by a 2.5 V power source. +0.1 0.65 0.15 1.5 The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. 2 FEATURES 3 Can be driven by a 2.5 V power source Not necessary to consider driving current because of its high 1 input impedance. Marking Possible to reduce the number of parts by omitting the bias resistor. ORDERING INFORMATION 1. Source PART NUMBER PACKAGE 2. Gate 3. Drain 2SJ461 SC-59 (Mini Mold) Marking: H19 ABSOLUTE MAXIMUM RATINGS (TA = 25C) EQUIVALENT CIRCUIT Drain to Source Voltage (VGS = 0 V) VDSS -50 V Gate to Source Voltage (VDS = 0 V) VGSS m7.0 V Drain Drain Current (DC) ID(DC) m0.1 A Drain Current (pulse) Note ID(pulse) m

5.5. 2sj463a.pdf Size:138K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SJ463A is a switching device which can be driven directly 2.1 0.1 by a 2.5 V power source. 1.25 0.1 The 2SJ463A has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. 2 FEATURES 3 Can be driven by a 2.5 V power source Low gate cut-off voltage 1 Marking ORDERING INFORMATION PART NUMBER PACKAGE 2SJ463A SC-70 (SSP) Marking: H21 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS -30 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V EQUIVALENT CIRCUIT Drain Current (DC) ID(DC) m0.1 A Drain Drain Current (pulse) Note ID(pulse) m0.4 A Total Power Dissipation PT 150 mW Body Channel Temperature Tch 150 C Gate Diode Storage Temperature Tstg -55 to +150 C Gate Prot

5.6. 2sj462.pdf Size:62K _nec

2SJ460
2SJ460
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings (unit : mm) The 2SJ462 is a switching device which can be driven directly 5.7 0.1 by an IC operating at 3 V. 1.5 0.1 2.0 0.2 The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applica- tions such as power management. 1 2 3 FEATURES 0.5 0.1 0.5 0.1 Can be driven by a 2.5 V power source. 0.4 0.05 New-type compact package. 2.1 0.85 0.1 4.2 Has advantages of packages for small signals and for power transistors, and compensates those disadvantages. Low on-state resistance. Equivalent Circuit RDS(ON) : 0.29 ? MAX. @VGS = 2.5 V, ID = 0.5 A RDS(ON) : 0.19 ? MAX. @VGS = 4.0 V, ID = 1.0 A Electrode Connection Drain ABSOLUTE MAXIMUM RATINGS (TA = +25 ?C) 1. Source 2. Drain Drain to Source Voltage VDSS 12 V 3. Gate Gate to Source Voltage VGSS

See also transistors datasheet: 2SJ353 , 2SJ411 , 2SJ424 , 2SJ425 , 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , IRF5210 , 2SJ461 , 2SJ462 , 2SJ463 , 2SJ471 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 .

Keywords

 2SJ460 Datasheet  2SJ460 Datenblatt  2SJ460 RoHS  2SJ460 Distributor
 2SJ460 Application Notes  2SJ460 Component  2SJ460 Circuit  2SJ460 Schematic
 2SJ460 Equivalent  2SJ460 Cross Reference  2SJ460 Data Sheet  2SJ460 Fiche Technique

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