MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP03N70I-HF
AP03N70J-A-HF ..AP2327GN-HF
AP2328GN-HF ..AP4433GM-HF
AP4434AGH-HF ..AP70L02GJ
AP70L02GP ..AP9565GEH
AP9565GEJ ..AP9992GP-HF
AUIRFS3004-7P ..BF963
BF964 ..BLF7G22L-250P
BLF7G22LS-100P ..BSD223P
BSD314SPE ..BUK106-50L
BUK106-50LP ..BUK7606-75B
BUK7607-30B ..BUK9775-55
BUK98150-55 ..CEB12N6
CEB12N65 ..CEK01N7
CEK7002A ..CES2324
CES2331 ..DMN2170U
DMN2215UDM ..F5032
F5033 ..FDB8832_F085
FDB8832_F085 ..FDD8874
FDD8874 ..FDMS2504SDC
FDMS2506SDC ..FDP51N25
FDP52N20 ..FDS6690AS
FDS6690AS ..FK30SM-5
FK30SM-6 ..FQI50N06
FQI5N60C ..FQU2N90TU_AM002
FQU3N50C ..FSJ264D
FSJ264R ..H5N6001P
H6968CTS ..HAT2168H
HAT2168N ..HUF75842P3
HUF75852G3 ..IPB100N04S2L-03
IPB100N04S3-03 ..IPD50N06S4L-08
IPD50N06S4L-12 ..IPP052N06L3G
IPP052NE7N3G ..IPW60R250CP
IPW60R280C6 ..IRF3709ZCS
IRF3709ZL ..IRF6712S
IRF6713S ..IRF7705
IRF7705G ..IRFB11N50A
IRFB23N15D ..IRFI1310N
IRFI3205 ..IRFP331
IRFP332 ..IRFS130
IRFS131 ..IRFS9642
ITF86172SK8T ..IXFH40N50Q
IXFH40N50Q2 ..IXFM42N20
IXFM50N20 ..IXFR40N50Q2
IXFR40N90P ..IXFX38N80Q2
IXFX40N90P ..IXTC13N50
IXTC160N10T ..IXTH96N20P
KF5N53FS ..KP723A
MLD1N06CL ..MTC5806Q8
MTC8402S6R ..MTN4N65FP
MTN4N65I3 ..NDC632P
NDC651N ..NTD6416ANL
NTD70N03R ..NX3008PBKS
PSMN5R8-40YS ..RFG45N06
RJK1529DPK ..RSJ300N10
RSJ400N06 ..SDF4N100JAA
SGSP461 ..SML1001R1BN
SML1001R1HN ..SML8030CFN
SML8075AN ..SPW12N50C3
SPW15N60C3 ..SSI1N50A
SSM6K32TU ..STB100NF04
STB10NK60Z ..STD26NF10
STW26NM50 ..TK1P90A
TK1Q90A ..TPC8059-H
TPC8060-H ..TPCL4203
TPCM8001-H ..UT9971P
UTC654 ..ZVP3310A
ZVP3310F ..ZXMS6006SG
2SJ471 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

2SJ471 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ471

Type of 2SJ471 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 30

Maximum junction temperature (Tj), Β°C: 150

Rise Time of 2SJ471 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1700

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO220CFM

Equivalent transistors for 2SJ471

2SJ471 PDF doc:

1.1. 2sj471.pdf Size:48K _hitachi

2SJ471 Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features • Low on-resistance RDS(on) = 25 m? typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 1. Gate 2. Drain S 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ± 20 V Drain current ID –30 A Drain peak current ID(pulse)Note1 –120 A Body to drain diode reverse drain current IDR –30 A Channel dissipation Pch Note2 30 W Channel temperature Tch 150 ° C Storage temperature Tstg –55 to +150 ° C Notes: 1. PW ? 10΅ s, duty cycle ? 1 % 2. Value at Tc = 25° C 2 2SJ471 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V(BR)DSS –30 — — V ID = –10mA, VGS = 0 voltage Gate to source breakdown V(BR)GSS ± 20 — — V IG = ± 100΅ A, VDS = 0 voltage Zero gate voltege drain IDSS — — –10 ΅ A VDS

5.1. rej03g0866_2sj479lsds.pdf Size:105K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation ( Send any inquiries to Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

5.2. 2sj479.pdf Size:92K _renesas

2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 25 m? typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) ) D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Rev.3.00 Jun 05, 2006 page 1 of 7 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID –30 A Drain peak current ID (pulse) Note 1 –120 A Body to drain diode reverse drain current IDR –30 A Channel dissipation Pch Note 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ? 10 ΅s, duty cycle ? 1% 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) I

See also transistors datasheet: 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SK2545 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 .


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