MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB2572
FDB2614 ..FDD8876
FDD8878 ..FDMS8622
FDMS86252 ..FDS4672A
FDS4675_F085 ..FKP202
FKP250A ..FQP13N06L
FQP13N10 ..FRE460D
FSL430D ..H7N0312AB
H7N0312LD ..HAT2185WP
HAT2187WP ..HUF76131SK8
HUF76132P3 ..IPB123N10N3G
IPD60R750E6 ..IPP080N03LG
IPP080N06NG ..IRC220
IRC224 ..IRF3717
IRF3805 ..IRF6726M
IRF6727M ..IRF7756G
IRF7759L2 ..IRFB3207ZG
IRFB3256 ..IRFI460
IRFI4905 ..IRFP353
IRFP354 ..IRFS232
IRFS233 ..IRFSL4010
IRFSL4115 ..IRFZ40
IRLM210A ..IXBH40N160
IXBH9N140 ..IXFH60N20
IXFH60N20F ..IXFN110N20
IXFN110N60P3 ..IXFR64N60Q3
IXFR66N50Q2 ..IXFX55N50F
IXFX60N55Q2 ..IXTC75N10
IXTC96N25T ..IXTK170N10P
IXTK170P10P ..IXTP64N055T
IXTP6N100D2 ..IXTV230N85TS
IXTV250N075T ..KF7N50F
KF7N50I ..KP737B
KP737G ..MMBF4392L
MTDA4N20J3 ..MTN6515E3
MTN6515F3 ..NDF04N60Z
NDF04N60Z ..NTGS3441
NTGS3443 ..PH2520U
PH2925U ..PMN27UN
PSMN8R0-30YL ..RFP14N05
RFP14N05L ..RJK2055DPA
RJK2057DPA ..RSU002N06
RSU002P03 ..SDF40N50JAM
SDF420 ..SGS150MA010D1
SGS30MA050D1 ..SMK0965F
SMK0965FC ..SML6070AN
SML6070BN ..SPI07N60S5
SPI07N65C3 ..SSG4890N
SSG4902N ..SSM3K315T
SSM3K316T ..SSPS7334N
SSPS922NE ..STB80NF55-08T4
STB80NF55L-06 ..STD7N52K3
STD7NK40Z ..STH250N55F3-6
STH260N6F6-2 ..STM4806
STM4808 ..STP27N3LH5
STP7NK30Z ..STT6802
STT812A ..STW16N65M5
STW16NK60Z ..TK16J55D
TK17A25D ..TPC8049-H
TPC8050-H ..TPCF8201
TPCF8301 ..UT7410
UT75N02 ..ZVP1320A
ZVP1320F ..ZXMS6006SG
2SJ471 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

2SJ471 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ471

Type of 2SJ471 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 30

Maximum junction temperature (Tj), Β°C: 150

Rise Time of 2SJ471 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1700

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO220CFM

Equivalent transistors for 2SJ471

2SJ471 PDF doc:

1.1. 2sj471.pdf Size:48K _hitachi

2SJ471 Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features • Low on-resistance RDS(on) = 25 m? typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 1. Gate 2. Drain S 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ± 20 V Drain current ID –30 A Drain peak current ID(pulse)Note1 –120 A Body to drain diode reverse drain current IDR –30 A Channel dissipation Pch Note2 30 W Channel temperature Tch 150 ° C Storage temperature Tstg –55 to +150 ° C Notes: 1. PW ? 10΅ s, duty cycle ? 1 % 2. Value at Tc = 25° C 2 2SJ471 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V(BR)DSS –30 — — V ID = –10mA, VGS = 0 voltage Gate to source breakdown V(BR)GSS ± 20 — — V IG = ± 100΅ A, VDS = 0 voltage Zero gate voltege drain IDSS — — –10 ΅ A VDS

5.1. rej03g0866_2sj479lsds.pdf Size:105K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation ( Send any inquiries to Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

5.2. 2sj479.pdf Size:92K _renesas

2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 25 m? typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) ) D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Rev.3.00 Jun 05, 2006 page 1 of 7 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID –30 A Drain peak current ID (pulse) Note 1 –120 A Body to drain diode reverse drain current IDR –30 A Channel dissipation Pch Note 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ? 10 ΅s, duty cycle ? 1% 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) I

See also transistors datasheet: 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SK2545 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 .


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