MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5909
2N5911 ..2N6962
2N6963 ..2SJ133
2SJ134 ..2SJ486
2SJ49 ..2SK1189
2SK1190 ..2SK1526
2SK1527 ..2SK1991
2SK1992 ..2SK2420
2SK2421 ..2SK2795
2SK2796 ..2SK3131
2SK3132 ..2SK3557
2SK3560 ..2SK4126
2SK413 ..2SK981A
2SK982 ..3SK77
3SK77BL ..AO4438
AO4440 ..AOB409L
AOB410L ..AOL1426
AOL1428A ..AON7444
AON7446 ..AOTF454L
AOTF472 ..AP09N70P-H
AP09N70R ..AP2762R-A-HF
AP2762S-A-HF ..AP4525GEH
AP4525GEM-HF ..AP90T03GH
AP90T03GI ..AP9620AGM-HF
AP9620GM-HF ..APT1002RCN
APT10030L2VFR ..APT5017SVR
AUIRL2910S ..BFL4026
BFL4036 ..BLS6G3135-20
BLS6G3135S-120 ..BSC110N06NS3G
BSC118N10NSG ..BSZ110N06NS3G
BSZ120P03NS3EG ..BUK75150-55A
BUK7516-55A ..BUK9614-55
BUK9614-55A ..C2T213
C2T225 ..CEF14N5
CEF14P20 ..CEP83A3
CEP83A3G ..DMG3415U
DMG3415UFY4 ..ECH8420
ECH8601M ..FDB024N06
FDB024N08BL7 ..FDD390N15ALZ
FDMC6296 ..FDMS86252
FDY2000PZ ..FQD2N90
FQD2P40 ..FQU2N60C
FQU2N90 ..FS20KM-5
FS20KM-6 ..H04N60E
H04N60F ..HAT1126R
HAT1126RJ ..HN1K02FU
HN1K03FU ..IPA60R099C6
IPA60R125C6 ..IPB80N06S2L-11
IPB80N06S2L-H5 ..IPI26CN10NG
IPI320N20N3G ..IPP65R280C6
IPP65R280E6 ..IRF1324S-7P
IRF140 ..IRF620FI
IRF620S ..IRF7341Q
IRF7342 ..IRF8707
IRF8707G ..IRFD224
IRFD310 ..IRFL9014
IRFL9110 ..IRFR012
IRFR014 ..IRFS530A
IRFS531 ..IRFU3410
IRFU3411 ..IRL3714Z
IRL3714ZS ..IRLS3034
IRLS3034-7P ..IXFE50N50
IXFE55N50 ..IXFK24N80P
IXFK24N90Q ..IXFN520N075T2
IXFT80N08 ..IXTA160N075T7
IXTA160N085T ..IXTH23N25MA
IXTP05N100 ..IXTQ44P15T
IXTQ450P2 ..IXTZ550N055T2
KSK596 ..MSFA0M02X8
MT3205 ..MTE1K8N25KM3
NDP7050 ..NTLUD3A260P
P0470ATF ..PHX2N60E
PSMN2R0-60ES ..RF1S9530SM
SDF10N100JEB ..SFR9034
SFR9110 ..SMG2310A
SMG2310N ..SML40L57
SML40M42BFN ..SPA11N60C3
SPA11N60CFD ..SSD9971
SSD9973 ..SSF5N60F
SSF5N60G ..SSG9475
SSG9575 ..SSM3K7002BF
SSM3K7002BFS ..SSPS7333P
STD628S ..STG8209
STG8211 ..STM4435
STM4437A ..STP21N05L
STP6NK90Z ..STT3471P
STT3490N ..STW120NF10
STW12N120K5 ..TK13A60D
TK13A65D ..TPC8020-H
TPC8021-H ..TPCC8065-H
TPCC8066-H ..UT4406
UT4410 ..ZVN3310A
ZVN3310F ..ZXMS6006SG
2SJ471 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

2SJ471 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ471

Type of 2SJ471 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 30

Maximum junction temperature (Tj), Β°C: 150

Rise Time of 2SJ471 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1700

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO220CFM

Equivalent transistors for 2SJ471 - Cross-Reference Search

2SJ471 PDF doc:

1.1. 2sj471.pdf Size:48K _hitachi

2SJ471 Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features • Low on-resistance RDS(on) = 25 m? typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 1. Gate 2. Drain S 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ± 20 V Drain current ID –30 A Drain peak current ID(pulse)Note1 –120 A Body to drain diode reverse drain current IDR –30 A Channel dissipation Pch Note2 30 W Channel temperature Tch 150 ° C Storage temperature Tstg –55 to +150 ° C Notes: 1. PW ? 10΅ s, duty cycle ? 1 % 2. Value at Tc = 25° C 2 2SJ471 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V(BR)DSS –30 — — V ID = –10mA, VGS = 0 voltage Gate to source breakdown V(BR)GSS ± 20 — — V IG = ± 100΅ A, VDS = 0 voltage Zero gate voltege drain IDSS — — –10 ΅ A VDS

5.1. rej03g0866_2sj479lsds.pdf Size:105K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation ( Send any inquiries to Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

5.2. 2sj479.pdf Size:92K _renesas

2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 25 m? typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) ) D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Rev.3.00 Jun 05, 2006 page 1 of 7 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID –30 A Drain peak current ID (pulse) Note 1 –120 A Body to drain diode reverse drain current IDR –30 A Channel dissipation Pch Note 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ? 10 ΅s, duty cycle ? 1% 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) I

See also transistors datasheet: 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SK2545 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 .


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