MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP98T06GP ..APT10088HVR
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP20N15E
MTP2301N3 ..NDS8936
NDS8961 ..NTMFS4854NS
NTMFS4897N ..PHN203
PHN210T ..PSMN012-60YS
PSMN012-80PS ..RCD100N20
RCJ330N25 ..RJK0304DPB
RJL6032DPP-M0 ..SCH1331
SCH1332 ..SFN423P
SFP2955 ..SMG2305L
SMG2305P ..SML40B37
SML40C15N ..SPB20N60C3
SPB20N60S5 ..SSG4224
SSG4228 ..SSM3K102TU
STD65N55F3 ..STH4N90FI
STH55N10 ..STP12PF06
STP55NF06 ..STT6405
STT6602 ..Si4832DY
Si4833DY ..TK6B60D
TK6P53D ..TPCA8015-H
TPCA8016-H ..UF8010
UF830 ..VMO1600-02P
VMO550-01F ..ZXMN4A06G
2SJ471 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

2SJ471 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ471

Type of 2SJ471 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 30

Maximum junction temperature (Tj), Β°C: 150

Rise Time of 2SJ471 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1700

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO220CFM

Equivalent transistors for 2SJ471

2SJ471 PDF doc:

1.1. 2sj471.pdf Size:48K _hitachi

2SJ471 Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features • Low on-resistance RDS(on) = 25 m? typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 1. Gate 2. Drain S 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ± 20 V Drain current ID –30 A Drain peak current ID(pulse)Note1 –120 A Body to drain diode reverse drain current IDR –30 A Channel dissipation Pch Note2 30 W Channel temperature Tch 150 ° C Storage temperature Tstg –55 to +150 ° C Notes: 1. PW ? 10΅ s, duty cycle ? 1 % 2. Value at Tc = 25° C 2 2SJ471 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V(BR)DSS –30 — — V ID = –10mA, VGS = 0 voltage Gate to source breakdown V(BR)GSS ± 20 — — V IG = ± 100΅ A, VDS = 0 voltage Zero gate voltege drain IDSS — — –10 ΅ A VDS

5.1. rej03g0866_2sj479lsds.pdf Size:105K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation ( Send any inquiries to Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

5.2. 2sj479.pdf Size:92K _renesas

2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 25 m? typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) ) D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Rev.3.00 Jun 05, 2006 page 1 of 7 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID –30 A Drain peak current ID (pulse) Note 1 –120 A Body to drain diode reverse drain current IDR –30 A Channel dissipation Pch Note 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ? 10 ΅s, duty cycle ? 1% 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) I

See also transistors datasheet: 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SK2545 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 .


 2SJ471 Datasheet  2SJ471 Datenblatt  2SJ471 RoHS  2SJ471 Distributor
 2SJ471 Application Notes  2SJ471 Component  2SJ471 Circuit  2SJ471 Schematic
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