MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF190N60E
FCPF20N60 ..FDD10N20LZ
FDD120AN15A0 ..FDMA520PZ
FDPF12N60NZ ..FDS9936A
FDS9945 ..FQB7P20TM_F085
FQPF9N50C ..FRX130H1
FRX130H2 ..H5N3005LD
H5N3005LS ..HAT2140H
HAT2141H ..HUF75623P3
HUF75631P3 ..IPB052N04NG
IPB054N06N3G ..IPD30N08S2-22
IPD30N08S2L-21 ..IPL60R385CP
IPP015N04NG ..IPW50R140CP
IPW50R199CP ..IRF3315S
IRF340 ..IRF6626
IRF6628 ..IRF7504
IRF7506 ..IRF9642
IRF9643 ..IRFH5303
IRFH5304 ..IRFP240FI
IRFP241 ..IRFR5305
IRFR540Z ..IRFS9232
IRFS9233 ..IRFY120
IRFY120C ..IRLHS2242
IXFH24N80P ..IXFL34N100
IXFL36N110P ..IXFR18N90P
IXFR200N10P ..IXFX20N120P
IXFX21N100F ..IXTA60N20T
IXTA62N15P ..IXTH60N25
KF3N50FS ..KP103L
KP103M ..MCH6336
MCH6337 ..MTBA5C10AQ8
MTBA5C10Q8 ..MTN3418S3
MTN3434G6 ..NDB5060L
NDB508A ..NTD4906N
NTD4909N ..NUS3116MT
NUS5530MN ..PMBF5484
PMBF5485 ..PSMN3R4-30PL
RJK0854DPB ..RRQ045P03
RRR015P03 ..SDF130JDA-D
SDF130JDA-S ..SFT1423
SFT1431 ..SMG2391P
SMG2398N ..SML50B26
SML50B30 ..SPB20N60C3
SPB20N60S5 ..SSG4224
SSG4228 ..SSM3K102TU
STB438S ..STD5N20
STD5N20-1 ..STF8234
STF8236 ..STL80N75F6
STL85N6F3 ..STP200NF04L
STP20N06 ..STP652F
STP656F ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A60U
TK12A65D ..TPC6130
TPC6201 ..TPCA8A09-H
TPCA8A10-H ..UT3418
UT3419 ..ZVN2110A
ZVN2110G ..ZXMS6005SG
2SJ471 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

2SJ471 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SJ471

Type of 2SJ471 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 30

Maximum junction temperature (Tj), Β°C: 150

Rise Time of 2SJ471 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1700

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO220CFM

Equivalent transistors for 2SJ471

2SJ471 PDF doc:

1.1. 2sj471.pdf Size:48K _hitachi

2SJ471 Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-540 1st. Edition Features • Low on-resistance RDS(on) = 25 m? typ. • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 3 1. Gate 2. Drain S 3. Source 2SJ471 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ± 20 V Drain current ID –30 A Drain peak current ID(pulse)Note1 –120 A Body to drain diode reverse drain current IDR –30 A Channel dissipation Pch Note2 30 W Channel temperature Tch 150 ° C Storage temperature Tstg –55 to +150 ° C Notes: 1. PW ? 10΅ s, duty cycle ? 1 % 2. Value at Tc = 25° C 2 2SJ471 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown V(BR)DSS –30 — — V ID = –10mA, VGS = 0 voltage Gate to source breakdown V(BR)GSS ± 20 — — V IG = ± 100΅ A, VDS = 0 voltage Zero gate voltege drain IDSS — — –10 ΅ A VDS

5.1. rej03g0866_2sj479lsds.pdf Size:105K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation ( Send any inquiries to Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

5.2. 2sj479.pdf Size:92K _renesas

2SJ479(L), 2SJ479(S) Silicon P Channel MOS FET REJ03G0866-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 25 m? typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) ) D 4 4 1. Gate 2. Drain G 3. Source 4. Drain 1 2 3 1 2 3 S Rev.3.00 Jun 05, 2006 page 1 of 7 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±20 V Drain current ID –30 A Drain peak current ID (pulse) Note 1 –120 A Body to drain diode reverse drain current IDR –30 A Channel dissipation Pch Note 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ? 10 ΅s, duty cycle ? 1% 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) I

See also transistors datasheet: 2SJ44 , 2SJ448 , 2SJ449 , 2SJ45 , 2SJ460 , 2SJ461 , 2SJ462 , 2SJ463 , 2SK2545 , 2SJ479 , 2SJ483 , 2SJ484 , 2SJ486 , 2SJ496 , 2SJ504 , 2SJ505 , 2SJ506 .


 2SJ471 Datasheet  2SJ471 Datenblatt  2SJ471 RoHS  2SJ471 Distributor
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