IXFH32N50Q MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXFH32N50Q

Type of IXFH32N50Q transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 32

Maximum junction temperature (Tj), °C: 150

Rise Time of IXFH32N50Q transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.15

Package: TO247

Equivalent transistors for IXFH32N50Q

IXFH32N50Q PDF documents for downloads:

1.1. ixfh32n50q_ixft32n50q.pdf Size:567K _ixys

IXFH 32N50Q VDSS ID25 RDS(on) HiPerFETTM IXFT 32N50Q Power MOSFETs ? 500 V 32 A 0.16 ? ? ? ? ? 500 V 32 A 0.16 ? ? ? ? Q-Class ? trr ? ? 250 ns ? ? N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 500 V VGS Continuous ±20 V VGSM Transient ±30 V (TAB) ID25 TC = 25°C 32 A IDM TC = 25°C; pulse width limited by TJM 128 A IAR TC = 25°C 32 A TO-268 (D3) ( IXFT) EAR TC = 25°C 45 mJ EAS 1500 mJ dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 5 V/ns G TJ ? 150°C, RG = 2 ? S (TAB) PD TC = 25°C 416 W TJ -55 ... + 150 °C G = Gate D = Drain TJM 150 °C S = Source TAB = Drain Tstg -55 ... + 150 °C TL 1.6 mm (0.063 in) from case for 10 s 300 °C Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-247 6 g Features TO-268 4 g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster swit

1.2. ixfh30n50_ixfh32n50_ixft30n50_ixft32n50.pdf Size:110K _ixys

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr ? 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V D (TAB) ID25 TC = 25°C 30N50 30 A 32N50 32 A IDM TC = 25°C 30N50 120 A TO-268 (D3) Case Style pulse width limited by TJM 32N50 128 A IAR TC = 25°C 30N50 30 A 32N50 32 A EAS TC = 25°C 1.5 J G (TAB) EAR ID = 25°C 45 mJ S dv/dt IS ? IDM, di/dt ? 100 A/ms, VDD ? VDSS, 5 V/ns TJ ? 150°C, RG = 2 W G = Gate, D = Drain, S = Source, TAB = Drain PD TC = 25°C 360 W TJ -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C • International standard packages TL 1.6 mm (0.062 in.) from case for 10 s 300 °C • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure Md Mounting torque 1.13/10 Nm

4.1. ixfh320n10t2_ixft320n10t2.pdf Size:186K _ixys

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFH320N10T2 ID25 = 320A Power MOSFET IXFT320N10T2 ? ? RDS(on) ? ? ? 3.5m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1M? 100 V TO-268 (IXFT) VGSS Continuous ± 20 V VGSM Transient ± 30 V G ID25 TC = 25°C (Chip Capability) 320 A S ILRMS Lead Current Limit, RMS 160 A D (Tab) IDM TC = 25°C, Pulse Width Limited by TJM 800 A IA TC = 25°C 160 A G = Gate D = Drain EAS TC = 25°C 1.5 J S = Source Tab = Drain dv/dt IS ? IDM, VDD ? VDSS, TJ ? 175°C 15 V/ns Features PD TC = 25°C 1000 W High Current Handling Capability TJ -55 ... +175 °C Fast Intrinsic Diode TJM 175 °C Avalanche Rated Tstg -55 ... +175 °C Fast Intrinsic Diode TL 1.6mm (0.062in.) from Case for 10s 300 °C Low RDS(on) Tsold Plastic Body for 10 seconds 260

See also transistors datasheet: IXFH21N50 , IXFH22N55 , IXFH24N50 , IXFH26N50 , IXFH26N50Q , IXFH26N60Q , IXFH30N50 , IXFH32N50 , 75321P , IXFH35N30 , IXFH40N30 , IXFH40N30Q , IXFH42N20 , IXFH4N100Q , IXFH50N20 , IXFH52N30Q , IXFH58N20 .

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