IXFX28N60 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXFX28N60

Type of IXFX28N60 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 600V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 28

Maximum junction temperature (Tj), °C: 150

Rise Time of IXFX28N60 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.25

Package: TO247

Equivalent transistors for IXFX28N60

IXFX28N60 PDF documents for downloads:

5.1. ixfk200n10p_ixfx200n10p.pdf Size:113K _ixys

VDSS = 100 V IXFK 200N10P PolarTM HiPerFET ID25 = 200 A IXFX 200N10P Power MOSFET ? ? RDS(on) ? 7.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 150 ns ? ? ? Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 M? 100 V VGS Continuous ±20 V G VGSM Transient ±30 V D (TAB) D S ID25 TC = 25°C 200 A ID(RMS) External lead current limit 75 A IDM TC = 25°C, pulse width limited by TJM 400 A PLUS247 (IXFX) IAR TC = 25°C60 A EAR TC = 25°C 100 mJ EAS TC = 25°C4 J D S dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 10 V/ns TAB TJ ? 150°C, RG = 4 ? PD TC = 25°C 830 W G = Gate D = Drain S = Source Tab = Drain TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 °C Md Mounting torque TO-264 0.9/6 Nm/lb.in FC Mounting force PLUS247 20 120/45 26 Nm/lb.in Features Weight TO-264

5.2. ixfk230n20t_ixfx230n20t.pdf Size:139K _ixys

Advance Technical Information GigaMOSTM VDSS = 200V IXFK230N20T ID25 = 230A Power MOSFET IXFX230N20T ? ? RDS(on) ? 7.5m? ? ? ? ? ? ? ? trr ? 200ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V G D VDGR TJ = 25°C to 175°C, RGS = 1M? 200 V (TAB) S VGSS Continuous ± 20 V PLUS247 (IXFX) VGSM Transient ± 30 V ID25 TC = 25°C 230 A IL(RMS) External Lead Current Limit 160 A IDM TC = 25°C, Pulse Width Limited by TJM 630 A IA TC = 25°C 100 A EAS TC = 25°C3 J (TAB) dV/dt IS ? IDM, VDD ? VDSS, TJ ? 175°C 20 V/ns PD TC = 25°C 1670 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Features Tstg -55 ... +175 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C International Standard Packages TSOLD Plastic Body for 10s 260 °C High Current Handling Capability Fast Intrinsic Diode Md Mounting Torque (TO-264) 1.13/10 Nm/lb

5.3. ixfk210n17t_ixfx210n17t.pdf Size:123K _ixys

Advance Technical Information GigaMOSTM VDSS = 170V IXFK210N17T ID25 = 210A Power MOSFET IXFX210N17T ? ? RDS(on) ? 7.5m? ? ? ? ? ? ? ? trr ? 200ns ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 175°C 170 V D (TAB) S VDGR TJ = 25°C to 175°C, RGS = 1M? 170 V VGSS Continuous ± 20 V PLUS247 (IXFX) VGSM Transient ± 30 V ID25 TC = 25°C 210 A IL(RMS) External Lead Current Limit 160 A IDM TC = 25°C, Pulse Width Limited by TJM 580 A IA TC = 25°C 100 A EAS TC = 25°C2 J (TAB) PD TC = 25°C 1150 W G = Gate D = Drain dV/dt IS ? IDM, VDD ? VDSS, TJ ? 175°C 20 V/ns S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Features Tstg -55 ... +175 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C International Standard Packages TSOLD Plastic Body for 10s 260 °C High Current Handling Capability Fast Intrinsic Diode Md Mounting Torque (TO-264) 1.13/10 Nm/lb.

5.4. ixfx220n15p_ixfk220n15p.pdf Size:126K _ixys

PolarTM Power MOSFET VDSS = 150V IXFK220N15P ID25 = 220A HiperFETTM IXFX220N15P ? ? RDS(on) ? 9m? ? ? ? ? ? ? ? trr ? 200ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 175°C 150 V D S VDGR TJ = 25°C to 175°C, RGS = 1M? 150 V Tab VGSS Continuous ±20 V VGSM Transient ±30 V PLUS247 (IXFX) ID25 TC = 25°C (Chip Capability) 220 A ILRMS Leads Current Limit, RMS 160 A IDM TC = 25°C, Pulse Width Limited by TJM 600 A IA TC = 25°C 50 A G D Tab S EAS TC = 25°C3 J dV/dt IS ? IDM, VDD ? VDSS, TJ ? 175°C 20 V/ns G = Gate D = Drain S = Source Tab = Drain PD TC = 25°C 1250 W TJ -55 ... +175 °C TJM 175 °C Features Tstg -55 ... +175 °C Avalanche Rated TL 1.6mm (0.062 in.) from Case for 10s 300 °C Low Package Inductance TSOLD Plastic Body for 10s 260 °C Fast Intrinsic Rectifier Md Mounting Torque (TO-264) 1.13/10 Nm/lb.in. Low RDS(on) and QG

5.5. ixfk260n17t_ixfx260n17t.pdf Size:122K _ixys

Advance Technical Information GigaMOSTM VDSS = 170V IXFK260N17T ID25 = 260A Power MOSFET IXFX260N17T ? ? RDS(on) ? 6.5m? ? ? ? ? ? ? ? trr ? 200ns ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 175°C 170 V D (TAB) S VDGR TJ = 25°C to 175°C, RGS = 1M? 170 V VGSS Continuous ± 20 V PLUS247 (IXFX) VGSM Transient ± 30 V ID25 TC = 25°C 260 A IL(RMS) External Lead Current Limit 160 A IDM TC = 25°C, Pulse Width Limited by TJM 700 A IA TC = 25°C 100 A EAS TC = 25°C3 J (TAB) PD TC = 25°C 1670 W G = Gate D = Drain dV/dt IS ? IDM, VDD ? VDSS, TJ ? 175°C 20 V/ns S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Features Tstg -55 ... +175 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C International Standard Packages TSOLD Plastic Body for 10s 260 °C High Current Handling Capability Fast Intrinsic Diode Md Mounting Torque (TO-264) 1.13/10 Nm/lb.

See also transistors datasheet: IXFX150N15 , IXFX15N100 , IXFX16N90 , IXFX180N07 , IXFX180N085 , IXFX180N10 , IXFX24N100 , IXFX26N90 , BUZ90A , IXFX32N50Q , IXFX34N80 , IXFX44N60 , IXFX48N50Q , IXFX50N50 , IXFX55N50 , IXFX90N20Q , IXFX90N30 .

Keywords