IXTH10N100 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTH10N100

Type of IXTH10N100 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 1000V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of IXTH10N100 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.2

Package: TO247

Equivalent transistors for IXTH10N100

IXTH10N100 PDF documents for downloads:

5.1. ixth16p20.pdf Size:43K _ixys

IXTH 16P20 VDSS = -200 V Standard Power MOSFET ID25 = -16 A P-Channel Enhancement Mode ? RDS(on) = 0.16 ? ? ? ? Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C -200 V VDGR TJ = 25°C to 150°C; RGS = 1 M? -200 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C -16 A IDM TC = 25°C, pulse width limited by TJ -64 A G = Gate, D = Drain, IAR TC = 25°C -16 A S = Source, TAB = Drain EAR TC = 25°C30 mJ PD TC = 25°C 300 W TJ -55 ... +150 °C TJM 150 °C Features • International standard package Tstg -55 ... +150 °C JEDEC TO-247 AD TL Maximum lead temperature for soldering 300 °C • Low RDS (on) HDMOSTM process 1.6 mm (0.062 in.) from case for 10 s • Rugged polysilicon gate cell structure Md Mounting torque 1.13/10 Nm/lb.in. • Unclamped Inductive Switching (UIS) Weight 6g rated • Low package inductance (<5 nH) - easy to drive and to protect Applications Symbol Test Conditions Char

5.2. ixth11p50_ixtt11p50.pdf Size:573K _ixys

VDSS = -500 V Standard Power MOSFET ID25 = -11 A P-Channel Enhancement Mode IXTH 11P50 Avalanche Rated ? RDS(on) = 0.75 ? ? ? ? IXTT 11P50 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 M? -500 V VGS Continuous ±20 V (TAB) VGSM Transient ±30 V D ID25 TC = 25°C -11 A IDM TC = 25°C, pulse width limited by TJ -44 A TO-268 (IXTT) Case Style IAR TC = 25°C -11 A EAR TC = 25°C30 mJ PD TC = 25°C 300 W G (TAB) D TJ -55 ... +150 °C S TJM 150 ° C G = Gate D = Drain Tstg -55 ... +150 °C S = Source TAB = Drain TL Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 AD 6 g TO-268 4 g Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Symbol Test Conditions Characteristic Values rated (TJ =

5.3. ixth180n085t_ixtq180n085t.pdf Size:203K _ixys

Preliminary Technical Information IXTH180N085T VDSS = 85 V TrenchMVTM IXTQ180N085T ID25 = 180 A Power MOSFET ? ? RDS(on) ? 5.5 m ? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25° C to 175° C85 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 85 V VGSM Transient ± 20 V TO-3P (IXTQ) ID25 TC = 25° C 180 A ILRMS Lead Current Limit, RMS 75 A IDM TC = 25° C, pulse width limited by TJM 480 A IAR TC = 25° C25 A EAS TC = 25° C 1.0 J G D (TAB) dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 3 V/ns S TJ ?175° C, RG = 5 ? G = Gate D = Drain PD TC = 25° C 430 W S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C Features TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Ultra-low On Resistance TSOLD Plastic body for 10 seconds 260 °C Unclamped Inductive Switching (UIS) rated Md Mounting torque 1.13 / 10 Nm/lb.in. Low package inductance - easy to drive an

5.4. ixth160n075t_ixtq160n075t.pdf Size:184K _ixys

Preliminary Technical Information IXTH160N075T VDSS = 75 V TrenchMVTM IXTQ160N075T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 6.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25°C to 175°C 75 V VDGR TJ = 25°C to 175°C; RGS = 1 M? 75 V VGSM Transient ± 20 V ID25 TC = 25°C 160 A D (TAB) ILRMS Lead Current Limit, RMS 75 A G D IDM TC = 25°C, pulse width limited by TJM 430 A S IAR TC = 25°C 25 A TO-3P (IXTQ) EAS TC = 25°C 750 mJ dv/dt IS ? IDM, di/dt ? 100 A/ms, VDD ? VDSS 3 V/ns TJ ? 175°C, RG = 5 ? PD TC = 25°C 360 W TJ -55 ... +175 °C D (TAB) G TJM 175 °C D S Tstg -55 ... +175 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C G = Gate D = Drain TSOLD Plastic body for 10 seconds 260 °C S = Source TAB = Drain Md Mounting torque (TO-3P, TO-220) 1.13 / 10 Nm/lb.in. Features Weight TO-3P 5.5 g Ultra-low On Resistance TO-247 6 g Unclamped Inductive Switching (UIS) rated

5.5. ixth12n120.pdf Size:545K _ixys

VDSS = 1200 V IXTH 12N120 ID (cont) = 12 A Power MOSFET, Avalanche Rated ? ? RDS(on)= 1.4 ? ? ? High Voltage Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 1200 V VGS Continuous ±30 V D (TAB) VGSM Transient ±40 V ID25 TC = 25°C12 A IDM TC = 25°C, pulse width limited by TJM 48 A IAR 12 A G = Gate, D = Drain, EAR TC = 25°C30 mJ S = Source, TAB = Drain EAS TC = 25°C 1.0 J PD TC = 25°C 500 W TJ -55 ... +150 °C Features TJM 150 °C Tstg -55 ... +150 °C International standard package JEDEC TO-247 AD Md Mounting torque 1.13/10 Nm/lb.in. Low RDS (on) HDMOSTM process Weight 6 g Rugged polysilicon gate cell structure Maximum lead temperature for soldering 300 °C Fast switching times 1.6 mm (0.062 in.) from case for 10 s Applications Switch-mode and resonant-mode power supplies Symbol Test Conditions Characteristic Values Motor controls (TJ = 2

5.6. ixth16n50d2_ixtt16n50d2.pdf Size:199K _ixys

Advance Technical Information Depletion Mode VDSX = 500V IXTH16N50D2 MOSFET ID(on) > 16A IXTT16N50D2 ? ? RDS(on) ? 240m? ? ? ? ? ? ? N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1M? 500 V VGSX Continuous ±20 V TO-268 (IXTT) VGSM Transient ±30 V PD TC = 25°C 695 W G TJ - 55 ... +150 °C S TJM 150 °C D (Tab) Tstg - 55 ... +150 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C G = Gate D = Drain S = Source Tab = Drain Md Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. Weight TO-247 6 g TO-268 4 g Features • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. • Easy to Mount • Space Savings BVDSX VGS = - 5V, ID = 250µA 500 V • High Power Density VGS(off)

5.7. ixth1n100_ixtt1n100.pdf Size:73K _ixys

Advance Technical Information VDSS = 1000 V IXTH 1N100 High Voltage MOSFET ID25 = 1.5 A IXTT 1N100 ? RDS(on) = 11 ? ? ? ? N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 1000 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C 1.5 A IDM TC = 25°C, pulse width limited by TJM 6 A TO-268 Case Style IAR 1.5 A EAR TC = 25°C6 mJ G EAS TC = 25°C 200 mJ (TAB) S dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 3 V/ns TJ ? 150°C, RG = 18 ? PD TC = 25°C60 W G = Gate, D = Drain, TJ -55 ... +150 °C S = Source, TAB = Drain TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. Features Weight TO-268 4 g International standard packages TO-247 6 g High voltage, Low RDS (on) HDMOSTM Maximum lead temperature for soldering 300 °C process 1.6 mm (0.062 in.) from case for 10 s Rugged polysilicon gate c

5.8. ixth152n085t_ixtq152n085t.pdf Size:184K _ixys

Preliminary Technical Information IXTH152N085T VDSS = 85 V TrenchMVTM IXTQ152N085T ID25 = 152 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25°C to 175°C85 V VDGR TJ = 25°C to 175°C; RGS = 1 M? 85 V VGSM Transient ± 20 V ID25 TC = 25°C 152 A ILRMS Lead Current Limit, RMS 75 A G (TAB) D IDM TC = 25°C, pulse width limited by TJM 410 A S IAR TC = 25°C25 A EAS TC = 25°C 750 mJ TO-3P (IXTQ) dv/dt IS ? IDM, di/dt ? 100 A/?s, VDD ? VDSS 3 V/ns TJ ? 175°C, RG = 5 ? PD TC = 25°C 360 W TJ -55 ... +175 °C TJM 175 °C G Tstg -55 ... +175 °C D (TAB) S TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 seconds 260 °C G = Gate D = Drain S = Source TAB = Drain Md Mounting torque 1.13 / 10 Nm/lb.in. Features Weight TO-3P 5.5 g Ultra-low On Resistance TO-247 6 g Unclamped Inductive Switching (UIS) rated Low package indu

5.9. ixth180n10t_ixtq180n10t.pdf Size:205K _ixys

Preliminary Technical Information IXTH180N10T VDSS = 100 V TrenchMVTM IXTQ180N10T ID25 = 180 A Power MOSFET ? ? RDS(on) ? 6.4 m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25° C to 175° C 100 V S VDGR TJ = 25° C to 175° C; RGS = 1 M? 100 V VGSM Transient ± 30 V TO-3P (IXTQ) ID25 TC = 25° C 180 A ILRMS Lead Current Limit, RMS 75 A IDM TC = 25° C, pulse width limited by TJM 450 A IAR TC = 25° C25 A EAS TC = 25° C 750 mJ G dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 3 V/ns D (TAB) S TJ ?175° C, RG = 3.3 ? PD TC = 25° C 480 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Features Tstg -55 ... +175 °C Ultra-low On Resistance Unclamped Inductive Switching (UIS) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C rated TSOLD Plastic body for 10 seconds 260 °C Low package inductance Md Mounting torque 1.13 / 10 Nm/lb.in. - easy to drive

5.10. ixth160n10t_ixtq160n10t.pdf Size:186K _ixys

Preliminary Technical Information IXTH160N10T VDSS = 100 V TrenchMVTM IXTQ160N10T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C; RGS = 1 M? 100 V VGSM Transient ± 30 V TO-3P (IXTQ) ID25 TC = 25°C 160 A ILRMS Lead Current Limit, RMS 75 A IDM TC = 25°C, pulse width limited by TJM 430 A IAR TC = 25°C25 A EAS TC = 25°C 500 mJ G D dv/dt IS ? IDM, di/dt ? 100 A/?s, VDD ? VDSS 3 V/ns (TAB) S TJ ? 175°C, RG = 5 ? G = Gate D = Drain PD TC = 25°C 430 W S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C Features Ultra-low On Resistance TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Unclamped Inductive Switching (UIS) TSOLD Plastic body for 10 seconds 260 °C rated Md Mounting torque 1.13 / 10 Nm/lb.in. Low package inductance - easy to drive and to

5.11. ixth130n20t.pdf Size:126K _ixys

Preliminary Technical Information IXTH130N20T VDSS = 200V TrenchHVTM ID25 = 130A Power MOSFET ? ? RDS(on) ? 16m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1M? 200 V VGSM Transient ± 30 V ID25 TC = 25°C 130 A ILRMS Lead Current Limit, RMS 75 A G (TAB) IDM TC = 25°C, pulse width limited by TJM 320 A D S IA TC = 25°C4 A EAS TC = 25°C 1.0 J G = Gate D = Drain S = Source TAB = Drain dv/dt IS ? IDM, VDD ? VDSS, TJ ? 175°C 10 V/ns Pd TC = 25°C 830 W TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C TL 1.6mm (0.062 in.) from case for 10s 300 °C Features TSOLD Plastic body for 10 seconds 260 °C Unclamped Inductive Switching (UIS) Md Mounting torque 1.13/10 Nm/lb.in rated Low package inductance Weight 6g - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High Power de

5.12. ixth13n110.pdf Size:46K _ixys

IXTH 13N110 VDSS = 1100 V MegaMOSTMFET ID25 = 13 A ? RDS(on) = 0.92 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 1100 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C13 A G = Gate, D = Drain, IDM TC = 25°C, pulse width limited by TJM 52 A S = Source, TAB = Drain PD TC = 25°C 360 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque 1.13/10 Nm/lb.in. Weight 6 g Maximum lead temperature for soldering 300 °C Features 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Switch-mode and resonant-mode min. typ. max. power supplies Motor controls VDSS VGS = 0 V, ID = 3 mA 1100 V Uninterruptible Powe

5.13. ixth160n15t.pdf Size:124K _ixys

Preliminary Technical Information IXTH160N15T VDSS = 150 V TrenchHVTM ID25 = 160 A Power MOSFET ? ? RDS(on) ? 9.6 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C; RGS = 1M? 150 V VGSM Transient ± 30 V ID25 TC = 25°C 160 A G (TAB) ILRMS Lead Current Limit, RMS 75 A D S IDM TC = 25°C, pulse width limited by TJM 430 A G = Gate D = Drain IA TC = 25°C 5 A S = Source TAB = Drain EAS TC = 25°C 1.0 J dv/dt IS ? IDM, VDD ? VDSS, TJ ? 175°C 10 V/ns Pd TC = 25°C 830 W TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C TL 1.6 mm (0.062 in.) from case for 10s 300 °C TSOLD Plastic body for 10 seconds 260 °C Md Mounting torque 1.13 / 10 Nm/lb.in. Weight 6g Features Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Symbol Test Conditions Characteristic Values (TJ = 25

5.14. ixth182n055t_ixtq182n055t.pdf Size:211K _ixys

Preliminary Technical Information IXTH182N055T VDSS = 55 V TrenchMVTM IXTQ182N055T ID25 = 182 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25° C to 175° C55 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 55 V VGSM Transient ± 20 V TO-3P (IXTQ) ID25 TC = 25° C 182 A ILRMS Lead Current Limit, RMS 75 A IDM TC = 25° C, pulse width limited by TJM 490 A S IAR TC = 25° C25 A EAS TC = 25° C 1.0 J G D (TAB) dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 3 V/ns S TJ ?175° C, RG = 5 ? G = Gate D = Drain PD TC = 25° C 360 W S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 seconds 260 °C Features Md Mounting torque 1.13 / 10 Nm/lb.in. Ultra-low On Resistance Unclamped Inductive Switching (UIS) Weight TO-3P 5.5 g TO-247 6 g rated Low package

5.15. ixth15n50l2-ixtp15n50l2.pdf Size:133K _ixys

Linear L2TM Power VDSS = 500V IXTH15N50L2 MOSFET w/Extended ID25 = 15A IXTP15N50L2 ? ? RDS(on) ? 480m? ? ? ? ? ? ? FBSOA N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V G (TAB) D VDGR TJ = 25°C to 150°C, RGS = 1M? 500 V S VGSS Continuous ±20 V TO-247 (IXTH) VGSM Transient ±30 V ID25 TC = 25°C15 A IDM TC = 25°C, Pulse Width Limited by TJM 35 A IA TC = 25°C 15 A G (TAB) EAS TC = 25°C 750 mJ D S PD TC = 25°C 300 W G = Gate D = Drain TJ -55 ... +150 °C S = Source TAB = Drain TJM 150 °C Tstg -55 ... +150 °C TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Features Md Mounting Torque 1.13/10 Nm/lb.in. Designed for Linear Operation Weight TO-220 3.0 g International Standard Packages TO-247 6.0 g Avalanche Rated Guaranteed FBSOA at 75°C Advantages Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T

See also transistors datasheet: IXFX44N60 , IXFX48N50Q , IXFX50N50 , IXFX55N50 , IXFX90N20Q , IXFX90N30 , IXTA1N100 , IXTA2N80 , BF964 , IXTH10N90 , IXTH10P50 , IXTH11N80 , IXTH11P50 , IXTH12N100 , IXTH12N45MA , IXTH12N45MB , IXTH12N50A .

Keywords