IXTH31N15MA MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTH31N15MA

Type of IXTH31N15MA transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 150V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 31

Maximum junction temperature (Tj), °C: 150

Rise Time of IXTH31N15MA transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.085

Package: TO247

Equivalent transistors for IXTH31N15MA

IXTH31N15MA PDF documents for downloads:

5.1. ixth3n120.pdf Size:131K _ixys

High Voltage VDSS = 1200 V IXTH 3N120 Power MOSFETs ID25 = 3 A N-Channel Enhancement Mode VDS(on) = 4.5 ? Avalanche Rated, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25°C to 150°C 3N120 1200 V 3N110 1100 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 3N120 1200 V 3N110 1100 V VGS Continuous ±20 V G D (TAB) D VGSM Transient ±30 V S ID25 TC = 25°C3 A IDM TC = 25°C, pulse width limited by TJM 12 A G = Gate D = Drain IAR TC = 25°C3 A S = Source TAB = Drain EAR TC = 25°C 20 mJ EAS 700 mJ dv/dt IS ? IDM, di/dt ? 100 A/µs, VDD ? VDSS, 5 V/ns Features TJ ? 150°C, RG = 2 ? International standard packages PD TC = 25°C 150 W Low RDS (on) TJ -55 to +150 °C Rated for unclamped Inductive load Switching (UIS) TJM 150 °C Molding epoxies meet UL 94 V-0 Tstg -55 to +150 °C flammability classification TL 1.6 mm (0.063 in) from case for 10 s 300 °C Md Mounting torque 1.13/10 Nm/lb.in. Advantages Weight 6 g Eas

5.2. ixth35n30_ixth40n30_ixtm40n30.pdf Size:107K _ixys

VDSS ID25 RDS(on) MegaMOSTMFET ? ? IXTH 35N30 300 V 35 A 0.10 ? ? ? ? IXTH 40N30 300 V 40 A 0.085 ? ? ? ? ? IXTM 40N30 300 V 40 A 0.088 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 M? 300 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C 35N30 35 A TO-204 AE (IXTM) 40N30 40 A IDM TC = 25°C, pulse width limited by TJM 35N30 140 A 40N30 160 A PD TC = 25°C 300 W TJ -55 ... +150 °C G D TJM 150 °C G = Gate, D = Drain, Tstg -55 ... +150 °C S = Source, TAB = Drain Md Mounting torque 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 300 °C Features 1.6 mm (0.062 in.) from case for 10 s International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Symbol Test Co

5.3. ixth30n60p_ixtq30n60p_ixtt30n60p_ixtv30n60p.pdf Size:352K _ixys

IXTH 30N60P VDSS = 600 V PolarHVTM IXTQ 30N60P ID25 = 30 A Power MOSFET ? ? ? ? IXTT 30N60P RDS(on) ? 240 m? ? ? ? ? N-Channel Enhancement Mode IXTV 30N60P Avalanche Rated IXTV 30N60PS Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 600 V VGSS Continuous ±30 V VGSM Transient ±40 V G D (TAB) D ID25 TC = 25° C30 A S IDM TC = 25° C, pulse width limited by TJM 80 A TO-3P (IXTQ) IAR TC = 25° C30 A EAR TC = 25° C50 mJ EAS TC = 25° C 1.5 J G dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns D D (TAB) S TJ ?150° C, RG = 4 ? PD TC = 25° C 540 W TO-268 (IXTT) TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C G S TL 1.6 mm (0.062 in.) from case for 10 s 300 ° C D (TAB) TSOLD Plastic body for 10 s 260 ° C PLUS220 (IXTV) Md Mounting torque (TO-3P, TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 11..65/2.5..15 N/lb. Weight TO-247 6.0 g G TO-3P 5.5 g D D (TAB) PLUS22

5.4. ixth360n055t2_ixtt360n055t2.pdf Size:181K _ixys

Preliminary Technical Information VDSS = 55V TrenchT2TM Power IXTH360N055T2 ID25 = 360A MOSFET IXTT360N055T2 ? ? RDS(on) ? ? ? 2.4m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25°C to 175°C55 V (TAB) S VDGR TJ = 25°C to 175°C, RGS = 1M? 55 V VGSM Transient ± 20 V TO-268 (IXTT) ID25 TC = 25°C (Chip Capability) 360 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25°C, Pulse Width Limited by TJM 900 A G IA TC = 25°C 180 A S D (TAB) EAS TC = 25°C 960 mJ PD TC = 25°C 935 W TJ -55 ... +175 °C G = Gate D = Drain S = Source TAB = Drain TJM 175 °C Tstg -55 ... +175 °C TL 1.6mm (0.062in.) from Case for 10s 300 °C Features Tsold Plastic Body for 10 seconds 260 °C International Standard Package Md Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. 175°C Operating Temperature Weight TO-247 6 g High Current Handling Capability TO-268 4 g Avalanche Rated

5.5. ixth36n50p_ixtq36n50p_ixtt36n50p_ixtv36n50p.pdf Size:361K _ixys

IXTH 36N50P VDSS = 500 V PolarHVTM IXTQ 36N50P ID25 = 36 A Power MOSFET ? ? IXTT 36N50P RDS(on) ? 170 m? ? ? ? ? ? ? IXTV 36N50P N-Channel Enhancement Mode Avalanche Rated IXTV 36N50PS TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V G VDGR TJ = 25° C to 150° C; RGS = 1 M? 500 V (TAB) D S VGS Continuous ±30 V VGSM Transient ±40 V TO-247 (IXTH) ID25 TC = 25° C36 A IDM TC = 25° C, pulse width limited by TJM 108 A IAR TC = 25° C36 A (TAB) EAR TC = 25° C50 mJ EAS TC = 25° C 1.5 J TO-268 (IXTT) dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 3 ? PD TC = 25° C 540 W G TJ -55 ... +150 °C S D (TAB) TJM 150 °C Tstg -55 ... +150 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C PLUS220 (IXTV) TSOLD Plastic body for 10 s 260 °C Md Mounting torque(TO-247) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220) 20..120/4.5..15 N/lb G D (TAB) D Weight TO-247 6 g S TO-268 5 g PLUS220 2 g PLUS220 SMD(IXTV.

5.6. ixth30n50p_ixtq30n50p_ixtt30n50p_ixtv30n50p.pdf Size:336K _ixys

VDSS = 500 V IXTH 30N50P PolarHVTM ID25 = 30 A IXTQ 30N50P Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? IXTT 30N50P N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 500 V VGSS Continuous ±30 V VGSM Transient ±40 V G D (TAB) ID25 TC = 25° C30 A S IDM TC = 25° C, pulse width limited by TJM 75 A TO-268 (IXTT) IAR TC = 25° C30 A EAR TC = 25° C40 mJ EAS TC = 25° C 1.2 J G S dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns (TAB) TJ ?150° C, RG = 5 ? PLUS220 (IXTV) PD TC = 25° C 460 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C G DS (TAB) TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 °C PLUS220 SMD(IXTV..S) Md Mounting torque (TO-247, TO-3P) 1.13/10 Nm/lb.in. FC Mounting force (PLUS220, PLUS220SMD) 11 65/2.5 15 N/lb. Weight PLUS220, PLUS

5.7. ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf Size:142K _ixys

IXTH30N50L2 VDSS = 500V Linear L2TM Power IXTQ30N50L2 ID25 = 30A MOSFET with extended ? ? IXTT30N50L2 RDS(on) ? ? ? 200m? ? ? ? ? FBSOA D D D D O D O N-Channel Enhancement Mode TO-247 (IXTH) RGi w w G O O (TAB) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V TO-3P (IXTQ) VDGR TJ = 25°C to 150°C, RGS = 1M? 500 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 30 A G (TAB) D IDM TC = 25°C, pulse width limited by TJM 60 A S IAR TC = 25°C 30 A EAR TC = 25°C 50 mJ TO-268 (IXTT) EAS 1.5 J PD TC = 25°C 400 W TJ -55 to +150 °C G S (TAB) TJM +150 °C Tstg -55 to +150 °C TL 1.6mm (0.063in) from case for 10s 300 °C G = Gate D = Drain S = Source TAB = Drain TSOLD Plastic body for 10s 260 °C Md Mounting torque (TO-247, TO-3P) 1.13/10 Nm/lb.in. Weight TO-247 6.0 g TO-3P 5.5 g Features TO-268 5.0 g Designed for linear operation International standard packages Unclamped Inductive Switching (UIS) rated.

5.8. ixth36p10.pdf Size:79K _ixys

Advance Technical Information IXTH 36P10 Standard Power MOSFET VDSS = -100 V ID25 = -36 A P-Channel Enhancement Mode ? RDS(on) = 75 m? ? ? ? Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C; RGS = 1 M? -100 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C -36 A IDM TC = 25°C, pulse width limited by TJ -144 A G = Gate, D = Drain, IAR TC = 25°C -36 A S = Source, TAB = Drain EAR TC = 25°C30 mJ PD TC = 25°C 180 W TJ -55 ... +150 °C TJM 150 °C Features • International standard package Tstg -55 ... +150 °C JEDEC TO-247 AD TL Maximum lead temperature for soldering 300 °C • Low RDS (on) HDMOSTM process 1.6 mm (0.062 in.) from case for 10 s • Rugged polysilicon gate cell structure Md Mounting torque 1.13/10 Nm/lb.in. • Unclamped Inductive Switching (UIS) Weight 6g rated • Low package inductance (<5 nH) - easy to drive and to protect Applications Symbol Test Conditio

See also transistors datasheet: IXTH24N50MA , IXTH24N50MB , IXTH27N35MA , IXTH27N35MB , IXTH27N40MA , IXTH27N40MB , IXTH30N45 , IXTH30N50 , IRF510 , IXTH31N15MB , IXTH31N20MA , IXTH31N20MB , IXTH33N45 , IXTH35N25MA , IXTH35N25MB , IXTH35N30 , IXTH39N08MA .

Keywords