IXTM35N30 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTM35N30

Type of IXTM35N30 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 300V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 35

Maximum junction temperature (Tj), °C: 150

Rise Time of IXTM35N30 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.1

Package: TO204

Equivalent transistors for IXTM35N30

IXTM35N30 PDF documents for downloads:

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See also transistors datasheet: IXTM12N50A , IXTM12N90 , IXTM13N80 , IXTM14N80 , IXTM15N60 , IXTM20N60 , IXTM21N50 , IXTM24N50 , 2N7001 , IXTM40N30 , IXTM42N20 , IXTM50N20 , IXTM5N100 , IXTM5N100A , IXTM67N10 , IXTM6N80 , IXTM6N80A .

Keywords