IXTP8N50MA MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IXTP8N50MA

Type of IXTP8N50MA transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 8

Maximum junction temperature (Tj), °C: 150

Rise Time of IXTP8N50MA transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.8

Package: TO220

Equivalent transistors for IXTP8N50MA

IXTP8N50MA PDF documents for downloads:

2.1. ixtp8n50pm.pdf Size:106K _ixys

Preliminary Technical Information IXTP 8N50PM VDSS = 500 V PolarHVTM ID25 = 4 A Power MOSFET ? ? RDS(on) ? 0.8 ? ? ? ? ? ? ? (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 500 V VGS Continuous ± 30 V VGSM Transient ± 40 V Isolated Tab ID25 TC = 25° C4 A G D IDM TC = 25° C, pulse width limited by TJM 14 A S IAR TC = 25° C8 A EAR TC = 25° C20 mJ EAS TC = 25° C 400 mJ G = Gate D = Drain S = Source dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns TJ ?150° C, RG = 18 ? PD TC = 25° C41 W Features TJ -55 ... +150 °C TJM 150 °C l Tstg -55 ... +150 °C Plastic overmolded tab for electrical isolation TL 1.6 mm (0.062 in.) from case for 10 s 300 °C l International standard package TSOLD Plastic body for 10 s 260 °C l Unclamped Inductive Switching (UIS) rated Md Mounting torque 1.13/1

2.2. ixta8n50p_ixtp8n50p.pdf Size:229K _ixys

IXTA 8N50P VDSS = 500 V PolarHVTM IXTP 8N50P ID25 = 8 A Power MOSFET ? ? RDS(on) ? 0.8 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 M? 500 V G VGS Continuous ±30 V S VGSM Transient ±40 V (TAB) ID25 TC = 25° C8 A IDM TC = 25° C, pulse width limited by TJM 14 A TO-220 (IXTP) IAR TC = 25° C8 A EAR TC = 25° C20 mJ EAS TC = 25° C 400 mJ dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS, 10 V/ns (TAB) G D TJ ?150° C, RG = 18 ? S PD TC = 25° C 150 W TJ -55 ... +150 °C G = Gate D = Drain TJM 150 °C S = Source TAB = Drain Tstg -55 ... +150 °C TL 1.6 mm (0.062 in.) from case for 10 s 300 °C TSOLD Plastic body for 10 s 260 °C Md Mounting torque (TO-220) 1.13/10 Nm/lb.in. Features Weight TO-220 4 g TO-263 3 g l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance Symbol Test Con

5.1. ixta88n085t_ixtp88n085t.pdf Size:217K _ixys

Preliminary Technical Information IXTA88N085T VDSS = 85 V TrenchMVTM IXTP88N085T ID25 = 88 A Power MOSFET ? ? RDS(on) ? 11 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25° C to 175° C85 V VDGR TJ = 25° C to 175° C; RGS = 1 M? 85 V G VGSM Transient ± 20 V S (TAB) ID25 TC = 25° C88 A ILRMS Lead Current Limit, RMS 75 A TO-220 (IXTP) IDM TC = 25° C, pulse width limited by TJM 240 A IAR TC = 25° C25 A EAS TC = 25° C 500 mJ dv/dt IS ?IDM, di/dt ?100 A/µs, VDD ?VDSS 3 V/ns G (TAB) D TJ ?175° C, RG = 5 ? S PD TC = 25° C 230 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 °C TJM 175 °C Tstg -40 ... +175 °C Features TL 1.6 mm (0.062 in.) from case for 10 s 300 °C Ultra-low On Resistance TSOLD Plastic body for 10 seconds 260 °C Unclamped Inductive Switching (UIS) rated Md Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. Low package inductance - easy to drive

See also transistors datasheet: IXTP22N20MB , IXTP2N80 , IXTP30N08MA , IXTP30N08MB , IXTP30N10MA , IXTP30N10MB , IXTP8N45MA , IXTP8N45MB , 2SK3569 , IXTP8N50MB , IXTU01N100 , IXTU01N80 , IXTZ20N60MA , IXTZ20N60MB , IXTZ24N50MA , IXTZ24N50MB , IXTZ27N40MA .

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