MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
J109
  J109
  J109
 
J109
  J109
  J109
 
J109
  J109
 
 
List
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
J109 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

J109 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: J109

Type of J109 transistor: JFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.4

Maximum drain-source voltage |Uds|, V: 25

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.04

Maximum junction temperature (Tj), °C: 150

Rise Time of J109 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 15

Maximum drain-source on-state resistance (Rds), Ohm: 12

Package: TO92

Equivalent transistors for J109 - Cross-Reference Search

J109 PDF doc:

1.1. j108_j109_j110_1.pdf Size:45K _philips

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 g gate • Low RDSon at zero gate voltage (<8 ? for J108). 2 s source 3 d drain APPLICATIONS • Analog switches • Choppers and commutators. 1 handbook, halfpage 2 DESCRIPTION 3 d g s N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. MAM197 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - ±2

1.2. j108-j109-j110.pdf Size:34K _philips

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 g gate • Low RDSon at zero gate voltage (<8 ? for J108). 2 s source 3 d drain APPLICATIONS • Analog switches • Choppers and commutators. 1 handbook, halfpage 2 DESCRIPTION 3 d g s N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. MAM197 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - ±2

1.3. pmbfj108_pmbfj109_pmbfj110_cnv_2.pdf Size:32K _philips2

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage ( < 8 ? for PMBFJ108). 3 handbook, halfpage DESCRIPTION d g s Symmetrical N-channel junction FETs in a SOT23 envelope. Intended 12 for use in applications such as analog switches, choppers and commutators Top view MAM385 and in audio amplifiers. PINNING - SOT23 PIN DESCRIPTION 1 drain Fig.1 Simplified outline and symbol. 2 source 3 gate LIMITING VALUES Note In accordance with the Absolute Maximum Rating System (IEC 134). 1. Drain and source are SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT interchangeable. VDS drain-source voltage - ±25 V VGSO gate-source voltage - -25 V VGD

1.4. pmbfj108_pmbfj109_pmbfj110.pdf Size:46K _philips2

J109
J109
PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 8 ? for PMBFJ108). 1.3 Applications Analog switches Choppers and commutators Audio amplifiers. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 1 3 gate 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ108; PMBFJ109; PMBFJ110 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ108 - plastic surface mounted package; 3 leads SOT23 PMBFJ109 PMBFJ110 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ108 38* PMBFJ109 39* PMBFJ110 40* [1] * = p: Made

1.5. ssm3j109tu.pdf Size:205K _toshiba

J109
J109
SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU 0 Power Management Switch Applications 0 High-Speed Switching Applications Unit: mm • 1.8 V drive 2.1±0.1 • Low ON-resistance: Ron = 300 m? (max) (@VGS = -1.8 V) 1.7±0.1 Ron = 172 m? (max) (@VGS = -2.5 V) Ron = 130 m? (max) (@VGS = -4.0 V) 1 Absolute Maximum Ratings (Ta = 25?C) 3 2 Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ± 8 V DC ID -2 Drain current A Pulse IDP -4 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 1. Gate 2. Source Channel temperature Tch 150 °C 3. Drain Storage temperature Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of UFM high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating conditions (i.e. operating temper

1.6. 2sj109.pdf Size:242K _toshiba

J109
J109

1.7. j108_j109_j110_mmbfj108.pdf Size:129K _fairchild_semi

J109
J109
J108/J109/J110/MMBFJ108 N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. 2 • Sourced from Process 58. TO-92 1 SuperSOT-3 1 Marking: I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS

1.8. j108_j109_j110_sst108_sst109_sst110.pdf Size:50K _vishay

J109
J109
J/SST108 Series Vishay Siliconix N–Channel JFETs J108 SST108 J109 SST109 J110 SST110 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST108 –3 to –10 8 20 4 J/SST109 –2 to –6 12 20 4 J/SST110 –0.5 to –4 18 20 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: J108 <8 W D Low Error Voltage D Analog Switches D Fast Switching—tON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 20 pA D Negligible “Off-Error” Excellent Accuracy D Sample-and-Hold D Low Capacitance: 11 pF D Good Frequency Response D Normally “On” Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST108 series is designed with high-performance The TO-226AA (TO-92) plastic package provides a analog switching applications in mind. It features low low-cost option. Both the J and SST series are available on-resistance, good off-isolation, and fast switching. in tape-and-reel for automated assem

1.9. 3sk73_3sk77_2sk240_2sj75_2sk146_2sj73_2sk389_2sj109_2sk266_2sk455_2sk456_2sc3381_2sa1349.pdf Size:150K _no

J109
J109

See also transistors datasheet: IXTZ27N40MB , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , IRF530 , J110 , J111 , J112 , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 .

Keywords

 J109 Datasheet  J109 Datenblatt  J109 RoHS  J109 Distributor
 J109 Application Notes  J109 Component  J109 Circuit  J109 Schematic
 J109 Equivalent  J109 Cross Reference  J109 Data Sheet  J109 Fiche Technique

 

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages