MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
J109
  J109
  J109
 
J109
  J109
  J109
 
J109
  J109
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB047N10
FDB050AN06A0 ..FDD6688
FDD6690A ..FDMS2734
FDMS3500 ..FDPF15N65
FDPF16N50 ..FDT86102LZ
FDT86106LZ ..FQD17P06
FQD18N20V2 ..FQU1N60C
FQU1N80 ..FSJ055R
FSJ160D ..H5N5006LS
H5N5007P ..HAT2165N
HAT2166H ..HUF75645P3
HUF75645S3S ..IPB083N10N3G
IPB08CNE8NG ..IPD50N04S4-08
IPD50N04S4-10 ..IPP041N12N3G
IPP042N03LG ..IPW60R125C6
IPW60R125CP ..IRF3705
IRF3707Z ..IRF6648
IRF6655 ..IRF7601
IRF7603 ..IRF9Z24N
IRF9Z24NL ..IRFH8334
IRFH8337 ..IRFP254A
IRFP255 ..IRFR9120
IRFR9120N ..IRFS9541
IRFS9542 ..IRFY9120C
IRFY9130 ..IRLI540A
IRLI540N ..IRLZ34NS
IRLZ40 ..IXFH30N50Q3
IXFH30N60P ..IXFM10N90
IXFM11N80 ..IXFR26N50
IXFR26N50Q ..IXFX26N90
IXFX27N80Q ..IXTA86N20T
IXTA88N085T ..IXTH6N90A
IXTH72N20 ..IXTP3N100P
IXTP3N110 ..IXTT82N25P
IXTT88N15 ..KF4N65P
KF4N80F ..KP505G
KP505V ..MCH6604
MCH6613 ..MTC1016S6R
MTC2402Q8 ..MTN3N60I3
MTN3N60J3 ..NDB6060
NDB6060L ..NTD5406N
NTD5407N ..NVD5890N
NVMFD5877NL ..PMBFJ113
PMBFJ210 ..PSMN4R0-25YLC
PSMN4R0-30YL ..RFD3N08L
RFD3N08LSM ..RJK1021DPN
RJK1028DNS ..RSD080P05
RSD100N10 ..SDF15N60GAF
SDF17N60 ..SFU9014
SFU9024 ..SMG5403
SMG5406 ..SML50J77
SML50L37 ..SPD02N60C3
SPD02N60S5 ..SSG4410N
SSG4434N ..SSM3K122TU
SSM3K123TU ..SSP6N70A
SSP6N80A ..STB50N25M5
STB50NF25 ..STD5NK40Z
STD5NK50Z ..STF9NK90Z
STF9NM60N ..STLT20FI
STLT29 ..STP20NF06
STP20NF06L ..STP6N52K3
STP6N60FI ..STT3402N
STT3405P ..STV6NA60
STV7NA40 ..TK130F06K3
TK13A25D ..TPC8012-H
TPC8013-H ..TPCC8007
TPCC8008 ..UT40N03
UT40N03T ..ZVN3310F
ZVN3320A ..ZXMS6006SG
 
J109 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

J109 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: J109

Type of J109 transistor: JFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.4

Maximum drain-source voltage |Uds|, V: 25

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.04

Maximum junction temperature (Tj), °C: 150

Rise Time of J109 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 15

Maximum drain-source on-state resistance (Rds), Ohm: 12

Package: TO92

Equivalent transistors for J109

J109 PDF doc:

1.1. j108_j109_j110_1.pdf Size:45K _philips

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 g gate • Low RDSon at zero gate voltage (<8 ? for J108). 2 s source 3 d drain APPLICATIONS • Analog switches • Choppers and commutators. 1 handbook, halfpage 2 DESCRIPTION 3 d g s N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. MAM197 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - ±2

1.2. j108-j109-j110.pdf Size:34K _philips

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 g gate • Low RDSon at zero gate voltage (<8 ? for J108). 2 s source 3 d drain APPLICATIONS • Analog switches • Choppers and commutators. 1 handbook, halfpage 2 DESCRIPTION 3 d g s N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. MAM197 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - ±2

1.3. pmbfj108_pmbfj109_pmbfj110.pdf Size:46K _philips2

J109
J109
PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 8 ? for PMBFJ108). 1.3 Applications Analog switches Choppers and commutators Audio amplifiers. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 1 3 gate 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ108; PMBFJ109; PMBFJ110 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ108 - plastic surface mounted package; 3 leads SOT23 PMBFJ109 PMBFJ110 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ108 38* PMBFJ109 39* PMBFJ110 40* [1] * = p: Made

1.4. pmbfj108_pmbfj109_pmbfj110_cnv_2.pdf Size:32K _philips2

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage ( < 8 ? for PMBFJ108). 3 handbook, halfpage DESCRIPTION d g s Symmetrical N-channel junction FETs in a SOT23 envelope. Intended 12 for use in applications such as analog switches, choppers and commutators Top view MAM385 and in audio amplifiers. PINNING - SOT23 PIN DESCRIPTION 1 drain Fig.1 Simplified outline and symbol. 2 source 3 gate LIMITING VALUES Note In accordance with the Absolute Maximum Rating System (IEC 134). 1. Drain and source are SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT interchangeable. VDS drain-source voltage - ±25 V VGSO gate-source voltage - -25 V VGD

1.5. 2sj109.pdf Size:242K _toshiba

J109
J109

1.6. ssm3j109tu.pdf Size:205K _toshiba

J109
J109
SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU 0 Power Management Switch Applications 0 High-Speed Switching Applications Unit: mm • 1.8 V drive 2.1±0.1 • Low ON-resistance: Ron = 300 m? (max) (@VGS = -1.8 V) 1.7±0.1 Ron = 172 m? (max) (@VGS = -2.5 V) Ron = 130 m? (max) (@VGS = -4.0 V) 1 Absolute Maximum Ratings (Ta = 25?C) 3 2 Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ± 8 V DC ID -2 Drain current A Pulse IDP -4 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 1. Gate 2. Source Channel temperature Tch 150 °C 3. Drain Storage temperature Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of UFM high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating conditions (i.e. operating temper

1.7. j108_j109_j110_mmbfj108.pdf Size:129K _fairchild_semi

J109
J109
J108/J109/J110/MMBFJ108 N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. 2 • Sourced from Process 58. TO-92 1 SuperSOT-3 1 Marking: I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS

1.8. j108_j109_j110_sst108_sst109_sst110.pdf Size:50K _vishay

J109
J109
J/SST108 Series Vishay Siliconix N–Channel JFETs J108 SST108 J109 SST109 J110 SST110 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST108 –3 to –10 8 20 4 J/SST109 –2 to –6 12 20 4 J/SST110 –0.5 to –4 18 20 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: J108 <8 W D Low Error Voltage D Analog Switches D Fast Switching—tON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 20 pA D Negligible “Off-Error” Excellent Accuracy D Sample-and-Hold D Low Capacitance: 11 pF D Good Frequency Response D Normally “On” Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST108 series is designed with high-performance The TO-226AA (TO-92) plastic package provides a analog switching applications in mind. It features low low-cost option. Both the J and SST series are available on-resistance, good off-isolation, and fast switching. in tape-and-reel for automated assem

See also transistors datasheet: IXTZ27N40MB , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , IRF530 , J110 , J111 , J112 , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 .

Keywords

 J109 Datasheet  J109 Datenblatt  J109 RoHS  J109 Distributor
 J109 Application Notes  J109 Component  J109 Circuit  J109 Schematic
 J109 Equivalent  J109 Cross Reference  J109 Data Sheet  J109 Fiche Technique

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