MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
J109
  J109
  J109
 
J109
  J109
  J109
 
J109
  J109
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..NDB6020P
NDB6030 ..NTD4909N
NTD4910N ..NUS3116MT
NUS5530MN ..PMBF5484
PMBF5485 ..PSMN3R4-30PL
PSMN3R5-30LL ..RFD16N05LSM
RFD16N05SM ..RJK0853DPB
RJK0854DPB ..RRQ045P03
RRR015P03 ..SDF26N50
SDF2N100JAA ..SGS100MA010D1
SGS150MA010D1 ..SMK1265F
SMK1265FD ..SML60J35
SML60J62 ..SPP20N60C3
SPP20N60CFD ..SSH4N70A
SSH4N80AS ..SSM6J26FE
SSM6J401TU ..SST4118
SST4119 ..STD17N05L-1
STD17N05LT4 ..STF11NM80
STF120NF10 ..STK2NA60
STK3055E ..STP24NF10
STP24NM60N ..STP7NK40Z
STP7NK80Z ..STW15NM60ND
STW160N75F3 ..TK150F04K3
TK150F04K3L ..TPC8031-H
TPC8032-H ..TPCC8103
TPCC8104 ..UT4812Z
UT4822 ..ZVN4424A
ZVN4424G ..ZXMS6006SG
 
J109 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

J109 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: J109

Type of J109 transistor: FET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 25

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.04

Maximum junction temperature (Tj), °C: 150

Rise Time of J109 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 15

Maximum drain-source on-state resistance (Rds), Ohm: 12

Package: TO92

Equivalent transistors for J109

J109 PDF doc:

1.1. j108_j109_j110_1.pdf Size:45K _philips

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 g gate • Low RDSon at zero gate voltage (<8 ? for J108). 2 s source 3 d drain APPLICATIONS • Analog switches • Choppers and commutators. 1 handbook, halfpage 2 DESCRIPTION 3 d g s N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. MAM197 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - ±2

1.2. j108-j109-j110.pdf Size:34K _philips

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 g gate • Low RDSon at zero gate voltage (<8 ? for J108). 2 s source 3 d drain APPLICATIONS • Analog switches • Choppers and commutators. 1 handbook, halfpage 2 DESCRIPTION 3 d g s N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. MAM197 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - ±2

1.3. pmbfj108_pmbfj109_pmbfj110.pdf Size:46K _philips2

J109
J109
PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 8 ? for PMBFJ108). 1.3 Applications Analog switches Choppers and commutators Audio amplifiers. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 1 3 gate 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ108; PMBFJ109; PMBFJ110 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ108 - plastic surface mounted package; 3 leads SOT23 PMBFJ109 PMBFJ110 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ108 38* PMBFJ109 39* PMBFJ110 40* [1] * = p: Made

1.4. pmbfj108_pmbfj109_pmbfj110_cnv_2.pdf Size:32K _philips2

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage ( < 8 ? for PMBFJ108). 3 handbook, halfpage DESCRIPTION d g s Symmetrical N-channel junction FETs in a SOT23 envelope. Intended 12 for use in applications such as analog switches, choppers and commutators Top view MAM385 and in audio amplifiers. PINNING - SOT23 PIN DESCRIPTION 1 drain Fig.1 Simplified outline and symbol. 2 source 3 gate LIMITING VALUES Note In accordance with the Absolute Maximum Rating System (IEC 134). 1. Drain and source are SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT interchangeable. VDS drain-source voltage - ±25 V VGSO gate-source voltage - -25 V VGD

1.5. 2sj109.pdf Size:242K _toshiba

J109
J109

1.6. ssm3j109tu.pdf Size:205K _toshiba

J109
J109
SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU 0 Power Management Switch Applications 0 High-Speed Switching Applications Unit: mm • 1.8 V drive 2.1±0.1 • Low ON-resistance: Ron = 300 m? (max) (@VGS = -1.8 V) 1.7±0.1 Ron = 172 m? (max) (@VGS = -2.5 V) Ron = 130 m? (max) (@VGS = -4.0 V) 1 Absolute Maximum Ratings (Ta = 25?C) 3 2 Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ± 8 V DC ID -2 Drain current A Pulse IDP -4 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 1. Gate 2. Source Channel temperature Tch 150 °C 3. Drain Storage temperature Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of UFM high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating conditions (i.e. operating temper

1.7. j108_j109_j110_mmbfj108.pdf Size:129K _fairchild_semi

J109
J109
J108/J109/J110/MMBFJ108 N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. 2 • Sourced from Process 58. TO-92 1 SuperSOT-3 1 Marking: I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS

1.8. j108_j109_j110_sst108_sst109_sst110.pdf Size:50K _vishay

J109
J109
J/SST108 Series Vishay Siliconix N–Channel JFETs J108 SST108 J109 SST109 J110 SST110 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST108 –3 to –10 8 20 4 J/SST109 –2 to –6 12 20 4 J/SST110 –0.5 to –4 18 20 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: J108 <8 W D Low Error Voltage D Analog Switches D Fast Switching—tON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 20 pA D Negligible “Off-Error” Excellent Accuracy D Sample-and-Hold D Low Capacitance: 11 pF D Good Frequency Response D Normally “On” Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST108 series is designed with high-performance The TO-226AA (TO-92) plastic package provides a analog switching applications in mind. It features low low-cost option. Both the J and SST series are available on-resistance, good off-isolation, and fast switching. in tape-and-reel for automated assem

See also transistors datasheet: IXTZ27N40MB , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , IRF530 , J110 , J111 , J112 , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 .

Keywords

 J109 Datasheet  J109 Datenblatt  J109 RoHS  J109 Distributor
 J109 Application Notes  J109 Component  J109 Circuit  J109 Schematic
 J109 Equivalent  J109 Cross Reference  J109 Data Sheet  J109 Fiche Technique

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