MOSFET Datasheet


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J109
  J109
  J109
 
J109
  J109
  J109
 
J109
  J109
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP04N70BI-H-HF
AP04N70BP-A ..AP2451GY-HF
AP2530AGY-HF ..AP4439GM-HF
AP4439GMT-HF ..AP73T02GJ-HF
AP73T03AGH-HF ..AP9575GH-HF
AP9575GI-HF ..AP9T15GH
AP9T15GJ ..APT8067HVR
APT8075BN ..AUIRFS4321
AUIRFS4410Z ..BF994
BF994S ..BLF7G27LS-150P
BLF7G27LS-200PB ..BSL215P
BSL307SP ..BUK203-50Y
BUK204-50Y ..BUK761R8-30C
BUK7620-100A ..BUK9E08-55B
BUK9E3R2-40B ..CEB21A2
CEB3060 ..CEM3060
CEM3083 ..CEU02N65A
CEU02N65G ..DMN3024LSS
DMN3030LSS ..FCA47N60
FCA47N60F ..FDC2612
FDC3512 ..FDG313N
FDG314P ..FDMS3672
FDMS3672 ..FDP6670AL
FDP7030BL ..FDS6930A
FDS6930B ..FMD15-06KC5
FMD15-06KC5 ..FQP12P20
FQP13N06L ..FRE460D
FRE460H ..FSL23AOR
FSL430D ..H7N0312AB
H7N0312LD ..HAT2185WP
HAT2187WP ..HUF76131SK8
HUF76132P3 ..IPB123N10N3G
IPB12CNE8NG ..IPD60R600E6
IPD60R750E6 ..IPP080N03LG
IPP080N06NG ..IRC220
IRC224 ..IRF3808
IRF3808S ..IRF6785
IRF6794M ..IRF7805
IRF7805A ..IRFB3307
IRFB3307Z ..IRFI5210
IRFI530A ..IRFP360LC
IRFP3703 ..IRFS23N20D
IRFS240 ..IRFSL41N15D
IRFSL4227 ..IRFZ44
IRFZ44A ..IRLML0030
IRLML0040 ..IXBJ40N140
IXBJ40N160 ..IXFH60N50P3
IXFH66N20Q ..IXFN130N30
IXFN132N50P3 ..IXFR80N15Q
IXFR80N20Q ..IXFX64N50P
IXFX64N50Q3 ..IXTE250N10
IXTF03N400 ..IXTK180N15
IXTK180N15P ..IXTP6N50P
IXTP70N075T2 ..IXTV26N50P
IXTV26N50PS ..KF7N60F
KF7N60P ..KP739A
KP739B ..MMBF4416
MMBF4416A ..MTDK1S6R
MTDK3S6R ..MTN6515J3
MTN6680Q8 ..NDF05N50Z
NDF06N60Z ..NTGS3455
NTGS4111P ..PHB110NQ08T
PHB11N50E ..PMN34LN
PMN34UN ..PSMN8R0-40PS
PSMN8R2-80YS ..RFP14N06L
RFP15N05L ..RJK2511DPK
RJK2555DPA ..RT1A050ZP
RT1A060AP ..SDF9130JAB
SDF9140 ..SI2300
SI2301 ..SML1004R2KN
SML1004RAN ..SMN01L20Q
SMN01Z30Q ..SSD02N65
SSD04N65 ..SSM3J01T
SSM3J02F ..SSM6L36FE
SSM6L36TU ..STB140NF75
STB141NF55 ..STD35N3LH5
STD35NF06 ..STF30NM50N
STF32N65M5 ..STL50N3LLH5
STL52N25M5 ..STP36N06L
STP36N06LFI ..STP9NK50Z
STP9NK60Z ..STW43NM60ND
STW45NM50 ..TK2A65D
TK2P60D ..TPC8086
TPC8087 ..TPCP8105
TPCP8106 ..UTN3055
UTP45N02 ..ZXM64P02X
ZXM64P035L3 ..ZXMS6006SG
 
J109 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

J109 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: J109

Type of J109 transistor: FET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 25

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.04

Maximum junction temperature (Tj), °C: 150

Rise Time of J109 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 15

Maximum drain-source on-state resistance (Rds), Ohm: 12

Package: TO92

Equivalent transistors for J109

J109 PDF doc:

1.1. j108_j109_j110_1.pdf Size:45K _philips

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 g gate • Low RDSon at zero gate voltage (<8 ? for J108). 2 s source 3 d drain APPLICATIONS • Analog switches • Choppers and commutators. 1 handbook, halfpage 2 DESCRIPTION 3 d g s N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. MAM197 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - ±2

1.2. j108-j109-j110.pdf Size:34K _philips

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification 1996 Jul 30 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 FEATURES PINNING - TO-92 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 g gate • Low RDSon at zero gate voltage (<8 ? for J108). 2 s source 3 d drain APPLICATIONS • Analog switches • Choppers and commutators. 1 handbook, halfpage 2 DESCRIPTION 3 d g s N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. MAM197 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static Fig.1 Simplified outline and symbol. discharge during transport or handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - ±2

1.3. pmbfj108_pmbfj109_pmbfj110.pdf Size:46K _philips2

J109
J109
PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 8 ? for PMBFJ108). 1.3 Applications Analog switches Choppers and commutators Audio amplifiers. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 1 3 gate 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ108; PMBFJ109; PMBFJ110 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ108 - plastic surface mounted package; 3 leads SOT23 PMBFJ109 PMBFJ110 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ108 38* PMBFJ109 39* PMBFJ110 40* [1] * = p: Made

1.4. pmbfj108_pmbfj109_pmbfj110_cnv_2.pdf Size:32K _philips2

J109
J109
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage ( < 8 ? for PMBFJ108). 3 handbook, halfpage DESCRIPTION d g s Symmetrical N-channel junction FETs in a SOT23 envelope. Intended 12 for use in applications such as analog switches, choppers and commutators Top view MAM385 and in audio amplifiers. PINNING - SOT23 PIN DESCRIPTION 1 drain Fig.1 Simplified outline and symbol. 2 source 3 gate LIMITING VALUES Note In accordance with the Absolute Maximum Rating System (IEC 134). 1. Drain and source are SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT interchangeable. VDS drain-source voltage - ±25 V VGSO gate-source voltage - -25 V VGD

1.5. 2sj109.pdf Size:242K _toshiba

J109
J109

1.6. ssm3j109tu.pdf Size:205K _toshiba

J109
J109
SSM3J109TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J109TU 0 Power Management Switch Applications 0 High-Speed Switching Applications Unit: mm • 1.8 V drive 2.1±0.1 • Low ON-resistance: Ron = 300 m? (max) (@VGS = -1.8 V) 1.7±0.1 Ron = 172 m? (max) (@VGS = -2.5 V) Ron = 130 m? (max) (@VGS = -4.0 V) 1 Absolute Maximum Ratings (Ta = 25?C) 3 2 Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ± 8 V DC ID -2 Drain current A Pulse IDP -4 PD (Note 1) 800 Drain power dissipation mW PD (Note 2) 500 1. Gate 2. Source Channel temperature Tch 150 °C 3. Drain Storage temperature Tstg -55~150 °C Note: Using continuously under heavy loads (e.g. the application of UFM high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ? reliability significantly even if the operating conditions (i.e. operating temper

1.7. j108_j109_j110_mmbfj108.pdf Size:129K _fairchild_semi

J109
J109
J108/J109/J110/MMBFJ108 N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. 2 • Sourced from Process 58. TO-92 1 SuperSOT-3 1 Marking: I8 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS

1.8. j108_j109_j110_sst108_sst109_sst110.pdf Size:50K _vishay

J109
J109
J/SST108 Series Vishay Siliconix N–Channel JFETs J108 SST108 J109 SST109 J110 SST110 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST108 –3 to –10 8 20 4 J/SST109 –2 to –6 12 20 4 J/SST110 –0.5 to –4 18 20 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: J108 <8 W D Low Error Voltage D Analog Switches D Fast Switching—tON: 4 ns D High-Speed Analog Circuit Performance D Choppers D Low Leakage: 20 pA D Negligible “Off-Error” Excellent Accuracy D Sample-and-Hold D Low Capacitance: 11 pF D Good Frequency Response D Normally “On” Switches D Low Insertion Loss D Eliminates Additional Buffering D Current Limiters DESCRIPTION The J/SST108 series is designed with high-performance The TO-226AA (TO-92) plastic package provides a analog switching applications in mind. It features low low-cost option. Both the J and SST series are available on-resistance, good off-isolation, and fast switching. in tape-and-reel for automated assem

See also transistors datasheet: IXTZ27N40MB , IXTZ35N25MA , IXTZ35N25MB , IXTZ42N20MA , IXTZ42N20MB , IXTZ67N10MA , IXTZ67N10MB , J108 , IRF530 , J110 , J111 , J112 , J113 , J211 , J212 , JANSR2N7272 , JANSR2N7275 .

Keywords

 J109 Datasheet  J109 Datenblatt  J109 RoHS  J109 Distributor
 J109 Application Notes  J109 Component  J109 Circuit  J109 Schematic
 J109 Equivalent  J109 Cross Reference  J109 Data Sheet  J109 Fiche Technique

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