MOSFET Datasheet



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2SK105
  2SK105
  2SK105
 
2SK105
  2SK105
  2SK105
 
2SK105
  2SK105
 
 
List
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
2SK105 MOSFET DataSheet. BJT, Power MOSFET, IGBT, IC Catalog
 

2SK105 MOSFET (IC) Datasheet. Cross Reference Search. 2SK105 Equivalent

Type Designator: 2SK105

Type of 2SK105 transistor: JFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.25

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V: 5

Maximum drain current |Id|, A: 0.02

Maximum junction temperature (Tj), Β°C: 150

Rise Time of 2SK105 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 100

Package: TO92

Equivalent transistors for 2SK105 - Cross-Reference Search

 

2SK105 PDF doc:

1.1. 2sk1052.pdf Size:104K _sanyo

2SK105
2SK105
Ordering number:EN3439 N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-state resistance. unit:mm · Ultrahigh-speed switching. 2052C [2SK1052] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 0.5 A Drain Current (Pulse) IDP PW? 10΅ s, duty cycle? 1% 2.0 A Tc=25° C 30 W Allowable Power Dissipation PD 1.75 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 450 V Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 ±10

1.2. 2sk1053.pdf Size:106K _sanyo

2SK105
2SK105
Ordering number:EN3440 N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-state resistance. unit:mm · Ultrahigh-speed switching. 2052C [2SK1053] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) ID 1.0 A Drain Current (Pulse) IDP PW? 10΅ s, duty cycle? 1% 4.0 A Tc=25° C 40 W Allowable Power Dissipation PD 1.75 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 450 V Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0 ±10

1.3. rej03g0906_2sk1056_2sk1057_2sk1058.pdf Size:85K _renesas

2SK105
2SK105
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

1.4. 2sk1059.pdf Size:280K _nec

2SK105
2SK105

1.5. 2sk1058.pdf Size:55K _hitachi

2SK105
2SK105
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.6. 2sk1056_2sk1057_2sk1058.pdf Size:40K _hitachi

2SK105
2SK105
2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features • Good frequency characteristic • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes • Suitable for audio power amplifier 2SK1056, 2SK1057, 2SK1058 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) S 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage 2SK1056 VDSX 120 V 2SK1057 140 2SK1058 160 Gate to source voltage VGSS ± 15 V Drain current ID 7A Body to drain diode reverse drain current IDR 7A Channel dissipation Pch*1 100 W Channel temperature Tch 150 ° C Storage temperature Tstg –55 to +150 ° C Note: 1. Value at TC = 25° C 2 2SK1056, 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SK

1.7. 2sk1057.pdf Size:55K _hitachi

2SK105
2SK105
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.8. 2sk17_2sk40_2sk59_2sk105_ifn17_ifn40_ifn59_ifn105.pdf Size:53K _interfet

2SK105
2SK105
ο»ΏDatabook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK17 2SK40 2SK59 2SK105 Japanese IFN17 IFN40 IFN59 IFN105 InterFET NJ16 NJ16 NJ16 NJ16 Process Unit N N N N Parameters Conditions Limit Channel Channel Channel Channel V BVGSS IG = – 1.0 Β΅A – 20 – 50 – 30 – 50 Min nA 0.10 1.0 1.0 1.0 IGSS VGS = ( ), VDS = Ø Max (–10 V) (– 30 V) (–10 V) (– 30 V) V – 0.5/– 6.0 – 0.4/– 5.0 – 0.4/– 5.0 – 0.25/– 4.5 VGS(off) VDS = ( ), ID = 1.0 nA Min/Max (10 V) (15 V) (10 V) (5.0 V) mA 0.3/6.5 0.6/6.5 0.3/1.4 0.5/12 IDSS VDS = ( ), VGS = Ø Min/Max (10 V) (15 V) (10 V) (5.0 V) mS 2.0 2.0 1.5 2.1 gfs VDS = ( ), VGS = Ø Typ (10 V) (15 V) (10 V) (5.0 V) pF 4.0 4.0 4.0 Ciss VGS = ( ), VDS = ( ) Typ (Ø) (Ø) (Ø) (15 V) (Ø) (10 V) pF 1.2 1.2 1.0 Crss VGS = ( ), VDS = ( ) Typ (– 10 V) (Ø) (Ø) (15 V) (Ø) (10 V) Package Configuration TO-226AA TO-226AA TO-226AA TO-22

See also transistors datasheet: 2SJ554 , 2SJ555 , 2SK1000 , 2SK1006-01MR , 2SK1007-01 , 2SK1013-01 , 2SK1017 , 2SK1019 , IRFZ46N , 2SK1059 , 2SK1060 , 2SK1109 , 2SK1122 , 2SK1123 , 2SK1132 , 2SK1133 , 2SK1177 .

Keywords

 2SK105 Datasheet  2SK105 Design 2SK105 MOSFET 2SK105 Power
 2SK105 RoHS Compliant 2SK105 Service 2SK105 Triacs 2SK105 Semiconductor
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