MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SK105
  2SK105
  2SK105
 
2SK105
  2SK105
  2SK105
 
2SK105
  2SK105
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB047N10
FDB050AN06A0 ..FDD6688
FDD6690A ..FDMS2734
FDMS3500 ..FDPF15N65
FDPF16N50 ..FDT86102LZ
FDT86106LZ ..FQD17P06
FQD18N20V2 ..FQU1N60C
FQU1N80 ..FSJ055R
FSJ160D ..H5N5006LS
H5N5007P ..HAT2165N
HAT2166H ..HUF75645P3
HUF75645S3S ..IPB083N10N3G
IPB08CNE8NG ..IPD50N04S4-08
IPD50N04S4-10 ..IPP041N12N3G
IPP042N03LG ..IPW60R125C6
IPW60R125CP ..IRF3705
IRF3707Z ..IRF6648
IRF6655 ..IRF7601
IRF7603 ..IRF9Z24N
IRF9Z24NL ..IRFH8334
IRFH8337 ..IRFP254A
IRFP255 ..IRFR9120
IRFR9120N ..IRFS9541
IRFS9542 ..IRFY9120C
IRFY9130 ..IRLI540A
IRLI540N ..IRLZ34NS
IRLZ40 ..IXFH30N50Q3
IXFH30N60P ..IXFM10N90
IXFM11N80 ..IXFR26N50
IXFR26N50Q ..IXFX26N90
IXFX27N80Q ..IXTA86N20T
IXTA88N085T ..IXTH6N90A
IXTH72N20 ..IXTP3N100P
IXTP3N110 ..IXTT82N25P
IXTT88N15 ..KF4N65P
KF4N80F ..KP505G
KP505V ..MCH6604
MCH6613 ..MTC1016S6R
MTC2402Q8 ..MTN3N60I3
MTN3N60J3 ..NDB6060
NDB6060L ..NTD5406N
NTD5407N ..NVD5890N
NVMFD5877NL ..PMBFJ113
PMBFJ210 ..PSMN4R0-25YLC
PSMN4R0-30YL ..RFD3N08L
RFD3N08LSM ..RJK1021DPN
RJK1028DNS ..RSD080P05
RSD100N10 ..SDF15N60GAF
SDF17N60 ..SFU9014
SFU9024 ..SMG5403
SMG5406 ..SML50J77
SML50L37 ..SPD02N60C3
SPD02N60S5 ..SSG4410N
SSG4434N ..SSM3K122TU
SSM3K123TU ..SSP6N70A
SSP6N80A ..STB50N25M5
STB50NF25 ..STD5NK40Z
STD5NK50Z ..STF9NK90Z
STF9NM60N ..STLT20FI
STLT29 ..STP20NF06
STP20NF06L ..STP6N52K3
STP6N60FI ..STT3402N
STT3405P ..STV6NA60
STV7NA40 ..TK130F06K3
TK13A25D ..TPC8012-H
TPC8013-H ..TPCC8007
TPCC8008 ..UT40N03
UT40N03T ..ZVN3310F
ZVN3320A ..ZXMS6006SG
 
2SK105 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK105 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK105

Type of 2SK105 transistor: JFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.25

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V: 5

Maximum drain current |Id|, A: 0.02

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK105 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 100

Package: TO92

Equivalent transistors for 2SK105

2SK105 PDF doc:

1.1. 2sk1052.pdf Size:104K _sanyo

2SK105
2SK105
Ordering number:EN3439 N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1052] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 0.5 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 2.0 A Tc=25 C 30 W Allowable Power Dissipation PD 1.75 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 450 V Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=30V, VDS=0 10

1.2. 2sk1053.pdf Size:106K _sanyo

2SK105
2SK105
Ordering number:EN3440 N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1053] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 1.0 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 4.0 A Tc=25 C 40 W Allowable Power Dissipation PD 1.75 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 450 V Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=30V, VDS=0 10

1.3. rej03g0906_2sk1056_2sk1057_2sk1058.pdf Size:85K _renesas

2SK105
2SK105
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

1.4. 2sk1059.pdf Size:280K _nec

2SK105
2SK105

1.5. 2sk1057.pdf Size:55K _hitachi

2SK105
2SK105
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.6. 2sk1058.pdf Size:55K _hitachi

2SK105
2SK105
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.7. 2sk1056_2sk1057_2sk1058.pdf Size:40K _hitachi

2SK105
2SK105
2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SK1056, 2SK1057, 2SK1058 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) S 3. Drain Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage 2SK1056 VDSX 120 V 2SK1057 140 2SK1058 160 Gate to source voltage VGSS 15 V Drain current ID 7A Body to drain diode reverse drain current IDR 7A Channel dissipation Pch*1 100 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at TC = 25 C 2 2SK1056, 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SK

See also transistors datasheet: 2SJ554 , 2SJ555 , 2SK1000 , 2SK1006-01MR , 2SK1007-01 , 2SK1013-01 , 2SK1017 , 2SK1019 , IRFZ46N , 2SK1059 , 2SK1060 , 2SK1109 , 2SK1122 , 2SK1123 , 2SK1132 , 2SK1133 , 2SK1177 .

Keywords

 2SK105 Datasheet  2SK105 Datenblatt  2SK105 RoHS  2SK105 Distributor
 2SK105 Application Notes  2SK105 Component  2SK105 Circuit  2SK105 Schematic
 2SK105 Equivalent  2SK105 Cross Reference  2SK105 Data Sheet  2SK105 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages