MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SK105
  2SK105
  2SK105
 
2SK105
  2SK105
  2SK105
 
2SK105
  2SK105
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7316Q
AUIRF7319Q ..BF1105R
BF1105WR ..BLF548
BLF571 ..BSC022N03SG
BSC024NE2LS ..BSS138PW
BSS138W ..BUK663R5-55C
BUK663R7-75C ..BUK9506-55B
BUK9506-75B ..BUZ72A
BUZ73AH ..CED4311
CED540L ..CEP1186
CEP1195 ..CPH6442
CPH6443 ..DMP3020LSS
DMP3025LK3 ..FDA59N30
FDA69N25 ..FDD3680
FDD3682_F085 ..FDMA7672
FDMB3800N ..FDN308P
FDN327N ..FDR8305N
FDR8308P ..FDS9958
FDS9958_F085 ..FQB50N06L
FQB55N10 ..FQPF19N20
FQPF19N20C ..FRM430H
FRM430R ..H02N60SJ
H02N65E ..HAT1108C
HAT1110R ..HITK0203MP
HITK0204MP ..IPA60R160C6
IPA60R165CP ..IPB80N06S4-07
IPB80N06S4L-05 ..IPI45N06S4-09
IPI45N06S4L-08 ..IPP65R380E6
IPP65R600C6 ..IRF1404L
IRF1404S ..IRF6218
IRF6218S ..IRF7379
IRF7379I ..IRF8910G
IRF8915 ..IRFE110
IRFE120 ..IRFM250
IRFM340 ..IRFR111
IRFR120 ..IRFS620
IRFS620A ..IRFU4105
IRFU4105Z ..IRL521
IRL530 ..IRLSZ34A
IRLSZ44A ..IXFH12N100
IXFH12N100F ..IXFK33N50
IXFK34N80 ..IXFN80N50Q2
IXFN80N50Q3 ..IXFV12N120PS
IXFV12N80P ..IXTA1R4N120P
IXTA1R6N100D2 ..IXTH280N055T
IXTH28N50Q ..IXTP120N075T2
IXTP120P065T ..IXTQ75N10P
IXTQ76N25T ..J201
J202 ..KMB035N40DC
KMB050N60P ..KTK920BU
KTK920T ..MTB14P03Q8
MTB15P04J3 ..MTN15N50FP
MTN1634V8 ..MTP3N50E
MTP3N60 ..NDT452AP
NDT452P ..NTMS4800N
NTMS4801N ..PHP33N10
PHP33NQ20T ..PSMN026-80YS
PSMN027-100PS ..RD12MVP1
RD15HVF1 ..RJK0358DPA
RJK0358DSP ..RQ1C065UN
RQ1C075UN ..SDF044JAB-U
SDF054JAA-D ..SFR9214
SFR9220 ..SMG2339P
SMG2340N ..SML5040CN
SML5050AN ..SPD08N50C3
SPD08P06PG ..SSG4512CE
SSG4520H ..SSM3K15FV
SSM3K15TE ..SSP7460N
SSP7461P ..STB80NF55-08T4
STB80NF55L-06 ..STD8N06-1
STD8N06T4 ..STH85N15F4-2
STH8N80 ..STP15NM60ND
STP15NM65N ..STP5NA80
STP5NA80FI ..STU75N3LLH6
STU75N3LLH6-S ..TIS73
TIS74 ..TK8A45D
TK8A45DA ..TPCA8051-H
TPCA8052-H ..UT100N03-Q
UT108N03 ..WTC9435
WTD40N03 ..ZXMP10A18K
ZXMP2120E5 ..ZXMS6006SG
 
2SK105 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK105 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK105

Type of 2SK105 transistor: JFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.25

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V: 5

Maximum drain current |Id|, A: 0.02

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK105 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 100

Package: TO92

Equivalent transistors for 2SK105

2SK105 PDF doc:

1.1. 2sk1052.pdf Size:104K _sanyo

2SK105
2SK105
Ordering number:EN3439 N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1052] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 0.5 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 2.0 A Tc=25 C 30 W Allowable Power Dissipation PD 1.75 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 450 V Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=30V, VDS=0 10

1.2. 2sk1053.pdf Size:106K _sanyo

2SK105
2SK105
Ordering number:EN3440 N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1053] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 1.0 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 4.0 A Tc=25 C 40 W Allowable Power Dissipation PD 1.75 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 450 V Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=30V, VDS=0 10

1.3. rej03g0906_2sk1056_2sk1057_2sk1058.pdf Size:85K _renesas

2SK105
2SK105
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

1.4. 2sk1059.pdf Size:280K _nec

2SK105
2SK105

1.5. 2sk1057.pdf Size:55K _hitachi

2SK105
2SK105
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.6. 2sk1058.pdf Size:55K _hitachi

2SK105
2SK105
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.7. 2sk1056_2sk1057_2sk1058.pdf Size:40K _hitachi

2SK105
2SK105
2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SK1056, 2SK1057, 2SK1058 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) S 3. Drain Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage 2SK1056 VDSX 120 V 2SK1057 140 2SK1058 160 Gate to source voltage VGSS 15 V Drain current ID 7A Body to drain diode reverse drain current IDR 7A Channel dissipation Pch*1 100 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at TC = 25 C 2 2SK1056, 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SK

See also transistors datasheet: 2SJ554 , 2SJ555 , 2SK1000 , 2SK1006-01MR , 2SK1007-01 , 2SK1013-01 , 2SK1017 , 2SK1019 , IRFZ46N , 2SK1059 , 2SK1060 , 2SK1109 , 2SK1122 , 2SK1123 , 2SK1132 , 2SK1133 , 2SK1177 .

Keywords

 2SK105 Datasheet  2SK105 Datenblatt  2SK105 RoHS  2SK105 Distributor
 2SK105 Application Notes  2SK105 Component  2SK105 Circuit  2SK105 Schematic
 2SK105 Equivalent  2SK105 Cross Reference  2SK105 Data Sheet  2SK105 Fiche Technique

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