MOSFET Datasheet



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2SK105
  2SK105
  2SK105
  2SK105
 
2SK105
  2SK105
  2SK105
  2SK105
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..K4059
K596 ..KMB7D0DN40QB
KMB7D0N40QA ..LKK47-06C5
LS3954 ..MTB40P04J3
MTB40P06J3 ..MTN2572F3
MTN2572FP ..MTP6N60
MTP7425Q8 ..NTD20N06L
NTD20P06L ..NTR4503N
NTS2101P ..PHT6N06T
PHT6NQ10T ..PSMN1R5-25YL
PSMN1R5-30YL ..RF1S60P03SM
RF1S630SM ..RJK03E7DPA
RJK03E8DPA ..RQK0201QGDQA
RQK0202RGDQA ..SDF100NA40HI
SDF100NA40JD ..SFR9014
SFR9024 ..SMG2310N
SMG2314N ..SML40M42BFN
SML40M80AFN ..SPA11N60CFD
SPA11N65C3 ..SSE70N10-44P
SSE90N04-03P ..SSM3J305T
SSM3J306T ..SSM6P15FE
SSM6P15FU ..STB200N6F3
STB200NF03 ..STD3N30-1
STD3N30L ..STF2HNK60Z
STF2N62K3 ..STK9N10
STL100N1VH5 ..STP14NM50N
STP14NM65N ..STP5N50FI
STP5N52K3 ..STS4DPF30L
STS4NF100 ..STU622S
STU624S ..TF256TH
TF408 ..TK80X04K3
TK8A10K3 ..TPCA8048-H
TPCA8049-H ..UP9T15G
URFP150 ..WTC2306
WTC2312 ..ZXMP10A17G
ZXMP10A17K ..ZXMS6006SG
 
2SK105 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK105 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK105

Type of 2SK105 transistor: JFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.25

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V: 5

Maximum drain current |Id|, A: 0.02

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK105 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 100

Package: TO92

Equivalent transistors for 2SK105 - Cross-Reference Search

2SK105 PDF doc:

1.1. 2sk1052.pdf Size:104K _sanyo

2SK105
2SK105
Ordering number:EN3439 N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1052] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 0.5 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 2.0 A Tc=25 C 30 W Allowable Power Dissipation PD 1.75 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 450 V Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=30V, VDS=0 10

1.2. 2sk1053.pdf Size:106K _sanyo

2SK105
2SK105
Ordering number:EN3440 N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1053] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 1.0 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 4.0 A Tc=25 C 40 W Allowable Power Dissipation PD 1.75 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 450 V Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=30V, VDS=0 10

1.3. rej03g0906_2sk1056_2sk1057_2sk1058.pdf Size:85K _renesas

2SK105
2SK105
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

1.4. 2sk1059.pdf Size:280K _nec

2SK105
2SK105

1.5. 2sk1057.pdf Size:55K _hitachi

2SK105
2SK105
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.6. 2sk1058.pdf Size:55K _hitachi

2SK105
2SK105
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.7. 2sk1056_2sk1057_2sk1058.pdf Size:40K _hitachi

2SK105
2SK105
2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SK1056, 2SK1057, 2SK1058 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) S 3. Drain Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage 2SK1056 VDSX 120 V 2SK1057 140 2SK1058 160 Gate to source voltage VGSS 15 V Drain current ID 7A Body to drain diode reverse drain current IDR 7A Channel dissipation Pch*1 100 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at TC = 25 C 2 2SK1056, 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SK

See also transistors datasheet: 2SJ554 , 2SJ555 , 2SK1000 , 2SK1006-01MR , 2SK1007-01 , 2SK1013-01 , 2SK1017 , 2SK1019 , IRFZ46N , 2SK1059 , 2SK1060 , 2SK1109 , 2SK1122 , 2SK1123 , 2SK1132 , 2SK1133 , 2SK1177 .

Keywords

 2SK105 Datasheet  2SK105 Datenblatt  2SK105 RoHS  2SK105 Distributor
 2SK105 Application Notes  2SK105 Component  2SK105 Circuit  2SK105 Schematic
 2SK105 Equivalent  2SK105 Cross Reference  2SK105 Data Sheet  2SK105 Fiche Technique

 

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