MOSFET Datasheet


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2SK105
  2SK105
  2SK105
 
2SK105
  2SK105
  2SK105
 
2SK105
  2SK105
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF22N60NT
FCPF260N60E ..FDD13AN06A0_F085
FDD13AN06_F085 ..FDMA7630
FDMA7632 ..FDMS8320L
FDMS8320LDC ..FDPF16N50
FDPF16N50T ..FDSS2407
FDT1600N10ALZ ..FQB9P25
FQD10N20C ..FQS4900
FQS4901 ..FRX130R2
FRX130R3 ..H5N5004PL
H5N5005PL ..HAT2160H
HAT2160N ..HUF75637S3S
HUF75639G3 ..IPB065N03LG
IPB065N06LG ..IPD350N06LG
IPD35N10S3L-26 ..IPP028N08N3G
IPP030N10N3G ..IPW50R399CP
IPW60R041C6 ..IRF350
IRF3515L ..IRF6633A
IRF6635 ..IRF7509
IRF7509(N) ..IRF9953
IRF9956 ..IRFH7911
IRFH7914 ..IRFP244A
IRFP245 ..IRFR9010
IRFR9012 ..IRFS9243
IRFS9520 ..IRFY140C
IRFY240 ..IRLI2203N
IRLI2505 ..IRLZ24
IRLZ24A ..IXFH26N50Q
IXFH26N55Q ..IXFL40N110P
IXFL44N100P ..IXFR21N100Q
IXFR230N20T ..IXFX230N20T
IXFX240N15T2 ..IXTA70N075T2
IXTA70N085T ..IXTH67N10MB
IXTH68N20 ..IXTP30N08MA
IXTP30N08MB ..IXTT68P20T
IXTT69N30P ..KF3N60F
KF3N60I ..KP501V
KP502A ..MCH6421
MCH6431 ..MTBA5N10V8
MTBA5Q10Q8 ..MTN351AN3
MTN35N03J3 ..NDB6030
NDB6030L ..NTD4963N
NTD4965N ..NVD5863NL
NVD5865NL ..PMBFJ110
PMBFJ111 ..PSMN3R7-25YLC
PSMN3R7-30YLC ..RFD3055LE
RFD3055LESM ..RJK1008DPN
RJK1008DPP ..RSD050N06
RSD050N10 ..SDF150JAA
SDF150JAB ..SFT1446
SFT1450 ..SMG3402
SMG3403 ..SML50H24
SML50J44 ..SPB80P06PG
SPD01N60C3 ..SSG4394N
SSG4402N ..SSM3K116TU
SSM3K119TU ..SSP5N90A
SSP6N55 ..STB4N62K3
STB4NK60Z ..STD5N52U
STD5N62K3 ..STF8NM50N
STF8NM60ND ..STLT19
STLT19FI ..STP20N10L
STP20N10LFI ..STP6N25FI
STP6N50 ..STT10L01
STT2604 ..STV60N05
STV60N05-16 ..TK12J60U
TK12X53D ..TPC8006-H
TPC8009-H ..TPCC8003-H
TPCC8005-H ..UT3N06
UT3P01Z ..ZVN3306A
ZVN3306F ..ZXMS6006SG
 
2SK105 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2SK105 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2SK105

Type of 2SK105 transistor: JFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.25

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V: 5

Maximum drain current |Id|, A: 0.02

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK105 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 100

Package: TO92

Equivalent transistors for 2SK105

2SK105 PDF doc:

1.1. 2sk1052.pdf Size:104K _sanyo

2SK105
2SK105
Ordering number:EN3439 N-Channel Silicon MOSFET 2SK1052 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1052] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 0.5 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 2.0 A Tc=25 C 30 W Allowable Power Dissipation PD 1.75 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 450 V Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=30V, VDS=0 10

1.2. 2sk1053.pdf Size:106K _sanyo

2SK105
2SK105
Ordering number:EN3440 N-Channel Silicon MOSFET 2SK1053 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C [2SK1053] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 1.0 A Drain Current (Pulse) IDP PW? 10 s, duty cycle? 1% 4.0 A Tc=25 C 40 W Allowable Power Dissipation PD 1.75 W Channel Temperature Tch 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 450 V Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0 1.0 mA Gate-to-Source Leakage Current IGSS VGS=30V, VDS=0 10

1.3. rej03g0906_2sk1056_2sk1057_2sk1058.pdf Size:85K _renesas

2SK105
2SK105
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular

1.4. 2sk1059.pdf Size:280K _nec

2SK105
2SK105

1.5. 2sk1057.pdf Size:55K _hitachi

2SK105
2SK105
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.6. 2sk1058.pdf Size:55K _hitachi

2SK105
2SK105
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.7. 2sk1056_2sk1057_2sk1058.pdf Size:40K _hitachi

2SK105
2SK105
2SK1056, 2SK1057, 2SK1058 Silicon N-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SK1056, 2SK1057, 2SK1058 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) S 3. Drain Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage 2SK1056 VDSX 120 V 2SK1057 140 2SK1058 160 Gate to source voltage VGSS 15 V Drain current ID 7A Body to drain diode reverse drain current IDR 7A Channel dissipation Pch*1 100 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at TC = 25 C 2 2SK1056, 2SK1057, 2SK1058 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SK

See also transistors datasheet: 2SJ554 , 2SJ555 , 2SK1000 , 2SK1006-01MR , 2SK1007-01 , 2SK1013-01 , 2SK1017 , 2SK1019 , IRFZ46N , 2SK1059 , 2SK1060 , 2SK1109 , 2SK1122 , 2SK1123 , 2SK1132 , 2SK1133 , 2SK1177 .

Keywords

 2SK105 Datasheet  2SK105 Datenblatt  2SK105 RoHS  2SK105 Distributor
 2SK105 Application Notes  2SK105 Component  2SK105 Circuit  2SK105 Schematic
 2SK105 Equivalent  2SK105 Cross Reference  2SK105 Data Sheet  2SK105 Fiche Technique

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