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PHB8N50E MOSFET (IC) Datasheet. Cross Reference Search. PHB8N50E Equivalent

Type Designator: PHB8N50E

Type of PHB8N50E transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 147

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 8.5

Maximum junction temperature (Tj), °C: 150

Rise Time of PHB8N50E transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.85

Package: SOT404

PHB8N50E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

PHB8N50E PDF doc:

1.1. php8n50e_phb8n50e_phw8n50e.pdf Size:90K _philips2

PHB8N50E
PHB8N50E

Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 8.5 A g • Low thermal resistance RDS(ON) ≤ 0.85 Ω s GENERAL DESCRIPTION N-c

5.1. php8nd50e_phb8nd50e_phw8nd50e.pdf Size:90K _philips2

PHB8N50E
PHB8N50E

Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated VDSS = 500 V • Fast switching • Stable off-state characteristics ID = 8.5 A • High thermal cycling performance g • Low thermal resistance RDS(ON) ≤ 0.85 Ω • Fast reverse

See also transistors datasheet: PHB65N06LT , PHB69N03LT , PHB6N50E , PHB6N60E , PHB6ND50E , PHB7N60E , PHB80N06LT , PHB87N03LT , BF245A , PHB8ND50E , PHB9N60E , PHD10N10E , PHD12N10E , PHD2N50E , PHD2N60E , PHD3055E , PHD3N40E .

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