PHD55N03LT MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: PHD55N03LT

Type of PHD55N03LT transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 103

Maximum drain-source voltage |Uds|, V: 25V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 25

Maximum junction temperature (Tj), °C: 150

Rise Time of PHD55N03LT transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.018

Package: SOT428

Equivalent transistors for PHD55N03LT

PHD55N03LT PDF documents for downloads:

1.1. phb55n03lt_phd55n03lt_php55n03lt_6.pdf Size:109K _philips2

Philips Semiconductors Product specification N-channel TrenchMOS? transistor PHP55N03LT, PHB55N03LT Logic level FET PHD55N03LT FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d VDSS = 25 V • Very low on-state resistance • Fast switching ID = 55 A • Low thermal resistance • Logic level compatible RDS(ON) ? 14 m? (VGS = 10 V) g RDS(ON) ? 18 m? (VGS = 5 V) s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- • High frequency computer motherboard d.c. to d.c. converters • High current switching The PHP55N03LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB55N03LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD55N03LT is supplied in the SOT428 (DPAK)surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) SOT428 (DPAK) tab PIN DESCRIPTION tab tab 1 gate 2 drain 1 2 2 3 source 1 2 3 1 3 1 3 tab

See also transistors datasheet: PHD10N10E , PHD12N10E , PHD2N50E , PHD2N60E , PHD3055E , PHD3N40E , PHD45N03LT , PHD50N03LT , BSS138 , PHD69N03LT , PHD6N10E , PHP10N10E , PHP10N60E , PHP11N50E , PHP125N06LT , PHP12N10E , PHP130N03LT .

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