PHT6N03LT MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: PHT6N03LT

Type of PHT6N03LT transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.8

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 3.2

Maximum junction temperature (Tj), °C: 150

Rise Time of PHT6N03LT transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.03

Package: SOT223

Equivalent transistors for PHT6N03LT

PHT6N03LT PDF documents for downloads:

1.1. pht6n03lt_3.pdf Size:43K _philips2

Philips Semiconductors Product specification TrenchMOS? transistor PHT6N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology VDSS = 30 V d • Very low on-state resistance • Fast switching ID = 5.9 A • Stable off-state characteristics • High thermal cycling performance RDS(ON) ? 30 m? (VGS = 5 V) g • Surface mounting package RDS(ON) ? 28 m? (VGS = 10 V) s GENERAL DESCRIPTION PINNING SOT223 N-channel enhancement mode PIN DESCRIPTION 4 logic level field-effect power transistor using ’trench’ 1 gate technology. The device has very low on-state resistance. It is 2 drain intended for use in dc to dc converters and general purpose 3 source switching applications. tab drain 1 2 3 The PHT6N03LT is supplied in the SOT223 surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ?C to 150?C - 30 V VDGR Dr

3.1. pht6n03t_2.pdf Size:57K _philips2

Philips Semiconductors Product specification TrenchMOS? transistor PHT6N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) Tsp = 25 ?C 12.8 A ’trench’ technology, the device Drain current (DC) Tamb = 25 ?C 5.9 A features very low on-state resistance Ptot Total power dissipation 8.3 W and has integral zener diodes giving Tj Junction temperature 150 ?C ESD protection up to 2kV. It is RDS(ON) Drain-source on-state 30 m? intended for use in DC-DC resistance VGS = 10 V converters and general purpose switching applications. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d 4 1 gate 2 drain g 3 source 4 drain (tab) s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITI

4.1. pht6n06lt_2.pdf Size:54K _philips2

Philips Semiconductors Product specification TrenchMOS? transistor PHT6N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 ?C 5.5 A The device features very low Drain current (DC) Tamb = 25 ?C 2.5 A on-state resistance and has Ptot Total power dissipation 8.3 W integral zener diodes giving Tj Junction temperature 150 ?C ESDprotection. It is intended for RDS(ON) Drain-source on-state 150 m? use in DC-DC converters and resistance VGS = 5 V general purpose switching applications. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d 4 1 gate 2 drain g 3 source 4 drain (tab) s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage

4.2. pht6n06t_1.pdf Size:58K _philips2

Philips Semiconductors Product specification TrenchMOS? transistor PHT6N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 ?C 5.5 A Using ’trench’ technology the Drain current (DC) Tamb = 25 ?C 2.5 A device features very low Ptot Total power dissipation 8.3 W on-state resistance and has Tj Junction temperature 150 ?C integral zener diodes giving RDS(ON) Drain-source on-state 150 m? ESDprotection. It is intended for resistance VGS = 10 V use in DC-DC converters and general purpose switching applications. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d 4 1 gate 2 drain g 3 source 4 drain (tab) s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX.

See also transistors datasheet: PHP6N60E , PHP6ND50E , PHP7N60E , PHP80N06LT , PHP87N03LT , PHP8N50E , PHP8ND50E , PHT11N06LT , 2SK170 , PHT6N06LT , PHT8N06LT , PHW11N50E , PHW14N50E , PHW20N50E , PHW7N60 , PHW8N50E , PHW8ND50E .

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