PHT8N06LT MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: PHT8N06LT

Type of PHT8N06LT transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.8

Maximum drain-source voltage |Uds|, V: 55V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5

Maximum junction temperature (Tj), °C: 150

Rise Time of PHT8N06LT transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.08

Package: SOT223

Equivalent transistors for PHT8N06LT

PHT8N06LT PDF documents for downloads:

1.1. pht8n06lt.pdf Size:51K _philips2

Philips Semiconductors Product specification TrenchMOS? transistor PHT8N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. The device features very ID Drain current 7.5 A low on-state resistance and has Ptot Total power dissipation 1.8 W integral zener diodes giving ESD Tj Junction temperature 150 ?C protection. It is intended for use in RDS(ON) Drain-source on-state 80 m? DC-DC converters and general resistance VGS = 5 V purpose switching applications. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d 4 1 gate 2 drain g 3 source 4 drain (tab) s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gate voltage RGS = 20 k? -55V ±VGS

3.1. pht8n06t_1.pdf Size:58K _philips2

Philips Semiconductors Product specification TrenchMOS? transistor PHT8N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using ’trench’ technolgy ID Drain current 7.5 A the device features very low on-state Ptot Total power dissipation 1.8 W resistance and has integral zener Tj Junction temperature 150 ?C diodes giving ESD protection. It is RDS(ON) Drain-source on-state 80 m? intended for use in DC-DC resistance VGS = 10 V converters and general purpose switching applications. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d 4 1 gate 2 drain g 3 source 4 drain (tab) s 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 55 V VDGR Drain-gate v

See also transistors datasheet: PHP7N60E , PHP80N06LT , PHP87N03LT , PHP8N50E , PHP8ND50E , PHT11N06LT , PHT6N03LT , PHT6N06LT , IRL3103 , PHW11N50E , PHW14N50E , PHW20N50E , PHW7N60 , PHW8N50E , PHW8ND50E , PHW9N60E , PHX2N50E .

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