PHX8N50E MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: PHX8N50E

Type of PHX8N50E transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 37

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4.8

Maximum junction temperature (Tj), °C: 150

Rise Time of PHX8N50E transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.85

Package: SOT186A

Equivalent transistors for PHX8N50E

PHX8N50E PDF documents for downloads:

5.1. phx8nd50e_2.pdf Size:61K _philips2

Philips Semiconductors Product specification PowerMOS transistors PHX8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated VDSS = 500 V • Fast switching • Stable off-state characteristics ID = 4.2 A • High thermal cycling performance g • Isolated package RDS(ON) ? 0.85 ? • Fast reverse recovery diode trr = 180 ns s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhancement mode PIN DESCRIPTION field-effect power transistor, case incorporating a Fast Recovery 1 gate Epitaxial Diode (FRED). This gives improved switching performance in 2 drain half bridge and full bridge converters making this device 3 source particularly suitable for inverters, lighting ballasts and motor control case isolated circuits. 1 2 3 The PHX8ND50E is supplied in the SOT186A full pack, isolated package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX

See also transistors datasheet: PHX3N50E , PHX3N60E , PHX4N60E , PHX4ND40E , PHX6N60E , PHX6NA60E , PHX6ND50E , PHX7N60E , IRF830 , PHX8ND50E , PMBF4391 , PMBF4392 , PMBF4393 , PMBF4416 , PMBF4416A , PMBF5484 , PMBF5485 .

Keywords