PMBFJ309 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: PMBFJ309

Type of PMBFJ309 transistor: FET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 25V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.03

Maximum junction temperature (Tj), °C: 150

Rise Time of PMBFJ309 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1.3

Maximum drain-source on-state resistance (Rds), Ohm:

Package: SOT23

Equivalent transistors for PMBFJ309

PMBFJ309 PDF documents for downloads:

1.1. pmbfj308_pmbfj309_pmbfj310_2.pdf Size:68K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification 1996 Sep 11 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; N-channel silicon field-effect transistors PMBFJ310 FEATURES PINNING - SOT23 • Low noise PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 s source • High gain. 2 d drain 3 g gate APPLICATIONS • AM input stage in car radios • VHF amplifiers handbook, halfpage 21 • Oscillators and mixers. d g DESCRIPTION s N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. 3 Top view MAM036 CAUTION Marking codes: PMBFJ308: M08. The device is supplied in an antistatic package. The PMBFJ309: M09. gate-source input must be protected against static PMBFJ310: M10. discharge during transport or handling. Fig.1 Simplified outline and s

3.1. pmbfj308.pdf Size:98K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification 1996 Sep 11 Supersedes data of April 1995 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ308; PMBFJ309; N-channel silicon field-effect transistors PMBFJ310 FEATURES PINNING - SOT23 • Low noise PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 s source • High gain. 2 d drain 3 g gate APPLICATIONS • AM input stage in car radios • VHF amplifiers handbook, halfpage 21 • Oscillators and mixers. d g DESCRIPTION s N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. 3 Top view MAM036 CAUTION Marking codes: PMBFJ308: M08. The device is supplied in an antistatic package. The PMBFJ309: M09. gate-source input must be protected against static PMBFJ310: M10. discharge during transport or handling. Fig.1 Simplified outline and s

5.1. pmbfj108_pmbfj109_pmbfj110_cnv_2.pdf Size:32K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 FEATURES • High-speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage ( < 8 ? for PMBFJ108). 3 handbook, halfpage DESCRIPTION d g s Symmetrical N-channel junction FETs in a SOT23 envelope. Intended 12 for use in applications such as analog switches, choppers and commutators Top view MAM385 and in audio amplifiers. PINNING - SOT23 PIN DESCRIPTION 1 drain Fig.1 Simplified outline and symbol. 2 source 3 gate LIMITING VALUES Note In accordance with the Absolute Maximum Rating System (IEC 134). 1. Drain and source are SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT interchangeable. VDS drain-source voltage - ±25 V VGSO gate-source voltage - -25 V VGD

5.2. pmbfj620.pdf Size:67K _philips2

PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features Two field effect transistors in a single package Low noise Interchangeability of drain and source connections High gain. 1.3 Applications AM input stage in car radios VHF amplifiers Oscillators and mixers. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per FET VDS drain-source voltage - - ±25 V VGSoff gate-source cut-off VDS =10V; ID =1 µA -2 - -6.5 V voltage IDSS drain current VGS = 0 V; VDS =10V 24 - 60 mA Ptot total power Ts ? 90 °C - - 190 mW dissipation ?yfs? forward transfer VDS = 10 V; 10 - - mS admittance ID =10mA PMBFJ620 Philips

5.3. pmbfj210_pmbfj211_pmbfj212_1.pdf Size:100K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ210; PMBFJ211; PMBFJ212 N-channel field-effect transistors Product specification 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL DESCRIPTION • Interchangeability of drain and source connections 1 s source • High impedance. 2 d drain 3 g gate APPLICATIONS • Analog switches • Choppers, multiplexers and commutators 3 handbook, halfpage • Audio amplifiers. d g s DESCRIPTION 12 N-channel symmetrical junction field-effect transistor in a SOT23 package. Top view MAM385 CAUTION Marking codes: PMBFJ210: M68. This product is supplied in anti-static packing to prevent PMBFJ211: M69. PMBFJ212: M70. damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and Fig

5.4. pmbfj111_pmbfj112_pmbfj113_cnv_2.pdf Size:32K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES • High-speed switching • Interchangeability of drain and source connections 3 handbook, halfpage • Low RDSon at zero gate voltage d ( < 30 ? for PMBFJ111). g s DESCRIPTION 12 Symmetrical N-channel junction Top view MAM385 FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers Fig.1 Simplified outline and symbol. and thin and thick film hybrids. PINNING - SOT23 LIMITING VALUES PIN DESCRIPTION In accordance with the Absolute Maximum Rating System (IEC 134). 1 drain SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT 2 source VDS drain-source voltage - ±40 V 3 gate VGSO gate-source voltage - -40 V Note VGDO drain

5.5. pmbfj108_pmbfj109_pmbfj110.pdf Size:46K _philips2

PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 8 ? for PMBFJ108). 1.3 Applications Analog switches Choppers and commutators Audio amplifiers. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 1 3 gate 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ108; PMBFJ109; PMBFJ110 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ108 - plastic surface mounted package; 3 leads SOT23 PMBFJ109 PMBFJ110 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ108 38* PMBFJ109 39* PMBFJ110 40* [1] * = p: Made

5.6. pmbfj174_pmbf175_pmbf176_pmbf177.pdf Size:228K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is 3 the interchangeability of the drain and handbook, halfpage source connections. d g s PINNING 12 1 = drain Top view MAM386 2 = source 3 = gate Note 1. Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking codes: 174 : p6X 175 : p6W 176 : p6S 177 : p6Y QUICK REFERENCE DATA Drain-source voltage ? VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current ?IG max. 50 mA Total power dissipation up to Tamb =25 ?CPtot max. 300 mW PMBFJ174 175 176 177 Dr

5.7. pmbfj174_pmbfj175_pmbfj176_pmbfj177_cnv_2.pdf Size:31K _philips2

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is 3 the interchangeability of the drain and handbook, halfpage source connections. d g s PINNING 12 1 = drain Top view MAM386 2 = source 3 = gate Note 1. Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking codes: 174 : p6X 175 : p6W 176 : p6S 177 : p6Y QUICK REFERENCE DATA Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current -IG max. 50 mA Total power dissipation up to Tamb =25 °CPtot m

5.8. pmbfj111_pmbfj112_pmbfj113.pdf Size:47K _philips2

PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 — 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (< 30 ? for PMBFJ111). 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1: Pinning [1] Pin Description Simplified outline Symbol 1 drain 3 2 source 3 gate 1 3 2 sym053 12 SOT23 [1] Drain and source are interchangeable. PMBFJ111; PMBFJ112; PMBFJ113 Philips Semiconductors N-channel junction FETs 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3: Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBF

See also transistors datasheet: PMBFJ110 , PMBFJ111 , PMBFJ112 , PMBFJ113 , PMBFJ210 , PMBFJ211 , PMBFJ212 , PMBFJ308 , IRFB3306 , PMBFJ310 , PN4391 , PN4392 , PN4393 , PN4416 , PN4416A , PSMN003-25W , RF1K49086 .

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