RF1S40N10SM MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RF1S40N10SM

Type of RF1S40N10SM transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 40

Maximum junction temperature (Tj), °C: 150

Rise Time of RF1S40N10SM transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package:

Equivalent transistors for RF1S40N10SM

RF1S40N10SM PDF documents for downloads:

5.1. rfg45n06_rfp45n06_rf1s45n06sm.pdf Size:375K _fairchild_semi

See also transistors datasheet: RF1K49223 , RF1K49224 , RF1S22N10SM , RF1S25N06SM , RF1S30N06LESM , RF1S30P05SM , RF1S30P06SM , RF1S40N10LESM , 2N4416 , RF1S45N06LESM , RF1S45N06SM , RF1S4N100SM , RF1S50N06LESM , RF1S50N06SM , RF1S530SM , RF1S540SM , RF1S60P03SM .

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