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RF1S4N100SM MOSFET (IC) Datasheet. Cross Reference Search. RF1S4N100SM Equivalent

Type Designator: RF1S4N100SM

Type of RF1S4N100SM transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 1000

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4.3

Maximum junction temperature (Tj), °C: 150

Rise Time of RF1S4N100SM transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 3.5

Package: TO263AB

RF1S4N100SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RF1S4N100SM PDF doc:

1.1. rfp4n100_rf1s4n100sm.pdf Size:93K _fairchild_semi

RF1S4N100SM
RF1S4N100SM

RFP4N100, RF1S4N100SM Data Sheet January 2002 4.3A, 1000V, 3.500 Ohm, High Voltage, Features N-Channel Power MOSFETs • 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel • rDS(ON) = 3.500Ω enhancement mode silicon gate power field effect • UIS Rating Curve (Single Pulse) transistors. They are designed for use in applications such as switching regulators, switching conver

5.1. rfg40n10_rfp40n10_rf1s40n10-sm.pdf Size:369K _fairchild_semi

RF1S4N100SM
RF1S4N100SM

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs • 40A, 100V These are N-Channel power MOSFETs manufactured using • rDS(ON) = 0.040Ω the MegaFET process. This process, which uses feature • UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

5.2. rfg45n06_rfp45n06_rf1s45n06sm.pdf Size:372K _fairchild_semi

RF1S4N100SM
RF1S4N100SM

RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power Features MOSFETs • 45A, 60V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.028Ω power field effect transistors. They are advanced power • Temperature Compensating PSPICE® Model MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

5.3. rfp45n06le_rf1s45n06lesm.pdf Size:202K _intersil

RF1S4N100SM
RF1S4N100SM

RFP45N06LE, RF1S45N06LESM Data Sheet October 1999 File Number 4076.2 45A, 60V, 0.028 Ohm, Logic Level Features N-Channel Power MOSFETs • 45A, 60V These are N-Channel enhancement mode power MOSFETs • rDS(ON) = 0.028Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes approaching those

5.4. rfg40n10le_rfp40n10le_rf1s40n10lesm.pdf Size:410K _intersil

RF1S4N100SM
RF1S4N100SM

RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level Features N-Channel Power MOSFETs • 40A, 100V These N-Channel enhancement mode power MOSFETs are • rDS(ON) = 0.040Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes appr

See also transistors datasheet: RF1S25N06SM , RF1S30N06LESM , RF1S30P05SM , RF1S30P06SM , RF1S40N10LESM , RF1S40N10SM , RF1S45N06LESM , RF1S45N06SM , IRFP260N , RF1S50N06LESM , RF1S50N06SM , RF1S530SM , RF1S540SM , RF1S60P03SM , RF1S630SM , RF1S640SM , RF1S70N03SM .

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